SU1400376A1 - METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICON - Google Patents
METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICONInfo
- Publication number
- SU1400376A1 SU1400376A1 SU04106098/25A SU4106098A SU1400376A1 SU 1400376 A1 SU1400376 A1 SU 1400376A1 SU 04106098/25 A SU04106098/25 A SU 04106098/25A SU 4106098 A SU4106098 A SU 4106098A SU 1400376 A1 SU1400376 A1 SU 1400376A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- tetraethoxysilane
- diffusion
- impurities
- silicon
- surface source
- Prior art date
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
Abstract
Способ приготовления пленкообразующих растворов для получения поверхностного источника диффузии примесей в кремний, содержащих органический растворитель, воду, катализатор гидролиза тетраэтоксисилана, соединения легирующих примесей и тетраэтоксисилан, включающий растворение части компонентов, включая тетраэтоксисилан; гидролиз тетраэтоксисилана и растворение оставшихся компонентов в растворе гидролизованного тетраэтоксисилана, отличающийся тем, что, с целью улучшения параметров диффузионных слоев за счет повышения вязкости растворов, раствор гидролизованного тетраэтоксисилана перемешивают, нагревая до температуры 50 - 90C, пока его объем не уменьшится в 1,2 - 2,5 раза.The method of preparation of film-forming solutions to obtain a surface source of diffusion of impurities into silicon containing an organic solvent, water, a catalyst for the hydrolysis of tetraethoxysilane, dopant compounds, and tetraethoxysilane, including the dissolution of some components, including tetraethoxysilane; hydrolysis of tetraethoxysilane and dissolution of the remaining components in a solution of hydrolyzed tetraethoxysilane, characterized in that, in order to improve the parameters of the diffusion layers by increasing the viscosity of the solutions, the solution of hydrolyzed tetraethoxysilane is mixed, heating to a temperature of 50 - 90C until its volume decreases to 2.5 times.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU04106098/25A SU1400376A1 (en) | 1986-06-11 | 1986-06-11 | METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICON |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU04106098/25A SU1400376A1 (en) | 1986-06-11 | 1986-06-11 | METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICON |
Publications (1)
Publication Number | Publication Date |
---|---|
SU1400376A1 true SU1400376A1 (en) | 2000-06-27 |
Family
ID=60533999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU04106098/25A SU1400376A1 (en) | 1986-06-11 | 1986-06-11 | METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICON |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU1400376A1 (en) |
-
1986
- 1986-06-11 SU SU04106098/25A patent/SU1400376A1/en active
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