SU1400376A1 - METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICON - Google Patents

METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICON

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Publication number
SU1400376A1
SU1400376A1 SU04106098/25A SU4106098A SU1400376A1 SU 1400376 A1 SU1400376 A1 SU 1400376A1 SU 04106098/25 A SU04106098/25 A SU 04106098/25A SU 4106098 A SU4106098 A SU 4106098A SU 1400376 A1 SU1400376 A1 SU 1400376A1
Authority
SU
USSR - Soviet Union
Prior art keywords
tetraethoxysilane
diffusion
impurities
silicon
surface source
Prior art date
Application number
SU04106098/25A
Other languages
Russian (ru)
Inventor
Ю.М. Локтаев
Я.Д. Нисневич
В.М. Пайвель
Original Assignee
Всесоюзный Электротехнический Институт Им.В.И.Ленина
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Всесоюзный Электротехнический Институт Им.В.И.Ленина filed Critical Всесоюзный Электротехнический Институт Им.В.И.Ленина
Priority to SU04106098/25A priority Critical patent/SU1400376A1/en
Application granted granted Critical
Publication of SU1400376A1 publication Critical patent/SU1400376A1/en

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  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)

Abstract

Способ приготовления пленкообразующих растворов для получения поверхностного источника диффузии примесей в кремний, содержащих органический растворитель, воду, катализатор гидролиза тетраэтоксисилана, соединения легирующих примесей и тетраэтоксисилан, включающий растворение части компонентов, включая тетраэтоксисилан; гидролиз тетраэтоксисилана и растворение оставшихся компонентов в растворе гидролизованного тетраэтоксисилана, отличающийся тем, что, с целью улучшения параметров диффузионных слоев за счет повышения вязкости растворов, раствор гидролизованного тетраэтоксисилана перемешивают, нагревая до температуры 50 - 90C, пока его объем не уменьшится в 1,2 - 2,5 раза.The method of preparation of film-forming solutions to obtain a surface source of diffusion of impurities into silicon containing an organic solvent, water, a catalyst for the hydrolysis of tetraethoxysilane, dopant compounds, and tetraethoxysilane, including the dissolution of some components, including tetraethoxysilane; hydrolysis of tetraethoxysilane and dissolution of the remaining components in a solution of hydrolyzed tetraethoxysilane, characterized in that, in order to improve the parameters of the diffusion layers by increasing the viscosity of the solutions, the solution of hydrolyzed tetraethoxysilane is mixed, heating to a temperature of 50 - 90C until its volume decreases to 2.5 times.

SU04106098/25A 1986-06-11 1986-06-11 METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICON SU1400376A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU04106098/25A SU1400376A1 (en) 1986-06-11 1986-06-11 METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICON

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU04106098/25A SU1400376A1 (en) 1986-06-11 1986-06-11 METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICON

Publications (1)

Publication Number Publication Date
SU1400376A1 true SU1400376A1 (en) 2000-06-27

Family

ID=60533999

Family Applications (1)

Application Number Title Priority Date Filing Date
SU04106098/25A SU1400376A1 (en) 1986-06-11 1986-06-11 METHOD FOR PREPARING FILM-FORMING SOLUTIONS FOR OBTAINING A SURFACE SOURCE OF DIFFUSION OF IMPURITIES IN SILICON

Country Status (1)

Country Link
SU (1) SU1400376A1 (en)

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