Киевский Политехнический Институт Им.50-Летия Великой Октябрьской Социалистической Революции
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Киевский Политехнический Институт Им.50-Летия Великой Октябрьской Социалистической РеволюцииfiledCriticalКиевский Политехнический Институт Им.50-Летия Великой Октябрьской Социалистической Революции
Priority to SU3895711/21ApriorityCriticalpatent/SU1322701A1/en
Application grantedgrantedCritical
Publication of SU1322701A1publicationCriticalpatent/SU1322701A1/en
FIELD: vacuum technique. SUBSTANCE: apparatus includes the target-cathode 1, the substrate 2, the substrate holder 3, the heater 4, the annular anode 5, having along its periphery uniformly spaced needle-shaped dents 6, for example of stainless steel, whose number is no less, than three. A diameter of the dent consists 1-1,5 mm, its length is no less, than 4 mm. The dents provide uniform taking of electrons, leaving a charge. That allows to receive sufficiently uniform electrophysical properties of the film, being deposited on the surface 2 of the substrate 2. The invention may be used at making thin-film members of integrated circuits. EFFECT: simplified structure of the apparatus, its enhanced efficiency. 2 cl, 1 dwg
SU3895711/21A1983-07-271983-07-27Apparatus for applying dielectric coatings by cathode deposition in vacuum
SU1322701A1
(en)
Method for the electrophoretic deposition of radiation-sensitive coatings on metallic bases, and use of the coated material as an offset printing plate
Apparatus for the coating of a substrate by plasma cvd or cathodic sputtering, process using this apparatus and application of this process to the manufacture of a thin film strain gage system