SI9600082A - Procedure of manufacture of mixture for pct elements - Google Patents
Procedure of manufacture of mixture for pct elements Download PDFInfo
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- SI9600082A SI9600082A SI9600082A SI9600082A SI9600082A SI 9600082 A SI9600082 A SI 9600082A SI 9600082 A SI9600082 A SI 9600082A SI 9600082 A SI9600082 A SI 9600082A SI 9600082 A SI9600082 A SI 9600082A
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Abstract
Predmet izuma je postopek za izdelavo mase PTC elemente, pri katerem z dodajanjem dopanta v dveh stopnjah izboljšamo termoelektrične lastnosti, kot sta prebojna trdnost in varistorski efekt, obenem pa lahko dosežemo tudi nižjo specifično upornost PTC elementa. Postopek za izdelavo mase za PTC elemente po izumu predvideva dopiranje materiala v dveh stopnjah. Dopant dodajamo enkrat pred kalcinacijo, v drugi stopnji pa ga dodajamo pred granuliranjem. Pri dopiranju uporabimo standardne dopante, lahko pa uporabimo tudi različna dopanta pri vsaki stopnji.The object of the invention is a process for making mass PTC elements where by adding a dopant to the improve the thermoelectric properties by two steps, such as breakthrough strength and varistor effect at the same time however, a lower specific resistance of the PTC can also be achieved element. The process for producing mass for PTC the elements according to the invention provide for the doping of the material into two stages. The dopant is added once before calcination, in the second stage, it is added before granulation. We use standard dopants when doping, but we can also use different dopants for each degree.
Description
POSTOPEK ZA IZDELAVO MASE ZA PTC ELEMENTEPROCEDURE FOR MASS MAKING FOR PTC ELEMENTS
Predmet izuma je postopek za izdelavo mase za PTC elemente, pri 20 katerem z dodajanjem dopanta v dveh stopnjah izboljšamo termoelektrične lastnosti, kot sta prebojna trdnost in varistorski efekt, obenem pa lahko dosežemo tudi nižjo specifično upornost PTC elementa.The subject of the invention is a process for producing mass for PTC elements, in which by adding a dopant in two stages, we improve thermoelectric properties such as breakthrough strength and varistor effect, and at the same time lower specific resistance of the PTC element can be achieved.
Izum sodi v razred H 01C 7/02 mednarodne patentne klasifikacije.The invention belongs to the class H 01C 7/02 of the international patent classification.
Tehnični problem, ki ga predložen postopek uspešno rešuje, je določitev postopka za izdelavo mase za PTC elemente po katerem bodo imeli PTC elementi boljše termoelektrične lastnosti od elementov, izdelanih po obstoječih postopkih.A technical problem that is successfully solved by the present process is the determination of a mass production process for PTC elements according to which PTC elements will have better thermoelectric properties than those produced by existing processes.
PTC element ima pozitivnim temperaturnim koeficientom, kar pomeni, da z naraščanjem temperature njegova upornost pada, dokler pri neki kritični temperaturi upornost naglo naraste tudi za več redov velikosti (104 do 107). Osnovni material za izdelavo PTC elementov je dopiran BaTiO3. PTC efekt je vezan na polikristalinično naravo keramike in sovpada sThe PTC element has a positive temperature coefficient, which means that as its temperature increases, its resistance decreases, until at some critical temperature the resistance increases sharply by several orders of magnitude (10 4 to 10 7 ). The basic material for making PTC elements is doped with BaTiO 3 . The PTC effect is related to the polycrystalline nature of the ceramic and coincides with
Curiejevo temperaturo BaTiO3, katere vrednost lahko z dodatki ustrezno premikamo in s tem premaknemo tudi PTC efekt.Curie temperature BaTiO 3 , the value of which can be shifted appropriately with the additives, thus shifting the PTC effect.
Standardni tehnološki postopek za izdelavo mase za PTC elemente temelji na pripravi osnovnih surovin, ki so 45 - 85 mol% BaTiO3, 1-2 mol% SrTiO3, 5-20 mol%, CaTiO3 in 1-20 mol% PbTiO3, ter 0,1-0,3mol% is dopanta (antimonov, itrijev, nobijev, lantanov ali cerijev oksid). Te sestavine morajo biti pripravljene v obliki prahu z minimalnim deležem primesi. Med mešanjem v krogličnih mlinih z ahatnimi kroglami se sestavinam doda destilirana voda, da dosežemo čim boljšo homogenost mase, ki jo nato sušimo. Pred granulacijo so zmletemu kalcinatu dodani še manganov acetat, silicijev dioksid in organska veziva, kot so polivinilacetat, polietilenglikol in druga, nakar sledi sušenje in razprševanje granulata v razpršilnem sušilniku. Granulat se oblikuje v postopku suhega stiskanja v manjše tablete. Orodje in sila sta odvisna od zaželjenih končnih dimenzij gotovega izdelka. Stisnjene tablete se nato v posebnih kadeh sintra (toplotno obdela pri temperaturi med 1300 in 1400°C), nakar se na sintrane tablete nanese aluminijaste ali srebrne elektrodne kontakte (npr. s sitotiskom) in utrdi pri temperaturi med 500 in s 900°C.The standard process for the production of mass for PTC elements is based on the preparation of basic materials that are 45-85 mol% BaTiO 3 , 1-2 mol% SrTiO 3 , 5-20 mol%, CaTiO 3 and 1-20 mol% PbTiO 3 , and 0.1-0.3 mol% is a dopant (antimony, yttrium, niobium, lanthanum or cerium oxide). These ingredients must be prepared in powder form with a minimum of impurities. While agitated in agate ball mills, distilled water is added to the ingredients to maximize the homogeneity of the mass, which is then dried. Prior to granulation, manganese acetate, silica, and organic binders such as polyvinyl acetate, polyethylene glycol and others are added to the ground calcinate, followed by drying and spraying the granulate in a spray dryer. The granulate is formed in the process of dry compression into smaller tablets. Tool and force depend on the desired final dimensions of the finished product. The compressed tablets are then sintered in special tubs (heat treated at a temperature between 1300 and 1400 ° C) and then aluminum or silver electrode contacts (eg screen printing) applied to the sintered tablets and solidified at a temperature between 500 and 900 ° C.
Standardni postopek izdelave predvideva dopiranje materiala z dopanti, kot so antimonov, itrijev, niobijev oksid itd. Dopiranje se izvede pred kalcinacijo.The standard fabrication process involves doping the material with dopants such as antimony, yttrium, niobium oxide, etc. Doping is performed before calcination.
Naloga in cilj postopka po izumu je izdelati maso za PTC elemente, ki io bo omogočala boljše termoelektrične lastnosti od elementov, izdelanih po obstoječih postopkih.The object and object of the process of the invention is to provide a mass for PTC elements that will provide better thermoelectric properties than elements manufactured by existing processes.
Po izumu predvideva postopek za izdelavo mase za PTC elemente dopiranje materiala v dveh stopnjah. Dopant dodajamo prvič pred kalcinacijo, v drugi stopnji pa ga dodajamo pred granuliranjem. Pri is dopiranju uporabimo standardne dopante tako, da uporabimo obakrat isti dopant, lahko pa uporabimo pri tudi različna dopanta pri prvem in drugem dopiranju.According to the invention, there is provided a process for producing mass for PTC elements by doping the material in two steps. The dopant is added first before calcination and in the second stage it is added before granulation. For doping we use standard dopants using both the same dopant, but we can also use different dopants for the first and second doping.
Pri opisanem postopku izdelave mase za PTC elemente s pomočjo dvakratnega dopiranja izboljšamo termoelektrične karakteristike PTC elementa, predvsem prebojno napetost (za cca 30%) in Τ/ΔΙΙ razmerje (zmanjša varistorski efekt za cca 20%), PTC element, izdelan iz mase po postopku po izumu pa ima tudi nižjo specifično upornost in višjo prebojno trdnost.In the described process of mass production for PTC elements by means of double doping, we improve the thermoelectric characteristics of the PTC element, especially the breakthrough voltage (by about 30%) and the Τ / ΔΙΙ ratio (reduces the varistor effect by about 20%), the PTC element made from the mass by the process according to the invention it also has a lower specific resistance and a higher penetration strength.
Na sliki 1 je prikazan l/U diagram PTC elementa. Krivulja, ki označuje dvojno dopiran material je označena s črko A.Figure 1 shows the l / U diagram of the PTC element. The curve denoting double doped material is indicated by the letter A.
Na sliki 2 je prikazana odvisnost upornosti od temperature PTC elementa. Dvojno dopiran material je označen s črko A.Figure 2 shows the temperature dependence of the PTC element. Double doped material is marked with the letter A.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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SI9600082A SI9600082A (en) | 1996-03-11 | 1996-03-11 | Procedure of manufacture of mixture for pct elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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SI9600082A SI9600082A (en) | 1996-03-11 | 1996-03-11 | Procedure of manufacture of mixture for pct elements |
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SI9600082A true SI9600082A (en) | 1997-10-31 |
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SI9600082A SI9600082A (en) | 1996-03-11 | 1996-03-11 | Procedure of manufacture of mixture for pct elements |
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1996
- 1996-03-11 SI SI9600082A patent/SI9600082A/en not_active IP Right Cessation
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Effective date: 20051004 |
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Effective date: 20131231 |