SI9110476A - Hall sensor in integrated CMOS circuit - Google Patents

Hall sensor in integrated CMOS circuit Download PDF

Info

Publication number
SI9110476A
SI9110476A SI9110476A SI9110476A SI9110476A SI 9110476 A SI9110476 A SI 9110476A SI 9110476 A SI9110476 A SI 9110476A SI 9110476 A SI9110476 A SI 9110476A SI 9110476 A SI9110476 A SI 9110476A
Authority
SI
Slovenia
Prior art keywords
layer
hall sensor
type
island
substrate
Prior art date
Application number
SI9110476A
Other languages
English (en)
Slovenian (sl)
Inventor
Silvo Zlebir
Andrej Dipl Ing Belic
Original Assignee
Iskra Stevci Ind Merilne In Up
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iskra Stevci Ind Merilne In Up filed Critical Iskra Stevci Ind Merilne In Up
Publication of SI9110476A publication Critical patent/SI9110476A/sl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
SI9110476A 1991-03-18 1991-03-18 Hall sensor in integrated CMOS circuit SI9110476A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
YU47691 1991-03-18

Publications (1)

Publication Number Publication Date
SI9110476A true SI9110476A (en) 1996-02-29

Family

ID=25550099

Family Applications (1)

Application Number Title Priority Date Filing Date
SI9110476A SI9110476A (en) 1991-03-18 1991-03-18 Hall sensor in integrated CMOS circuit

Country Status (4)

Country Link
DE (1) DE4208544A1 (de)
FR (1) FR2674375B1 (de)
GB (1) GB2253941B (de)
SI (1) SI9110476A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2072590C1 (ru) * 1994-01-14 1997-01-27 Акционерное общество закрытого типа "VL" Магнитоуправляемая логическая ячейка
DE19857275A1 (de) * 1998-12-11 2000-06-15 Johannes V Kluge Integrierbarer Magnetfeldsensor aus Halbleitermaterial
EP1045461A3 (de) * 1999-02-01 2005-02-09 Sentron Ag Verfahren zur Herstellung von Hallelementen
CN100362355C (zh) * 2005-05-27 2008-01-16 东南大学 微型抗辐射电场传感器
DE102006010495B4 (de) * 2006-03-02 2011-02-17 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Verfahren und Substrat zur Immobilisierung von Biomolekülen
US9728581B2 (en) * 2015-11-04 2017-08-08 Texas Instruments Incorporated Construction of a hall-effect sensor in a buried isolation region

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0162165A3 (de) * 1983-06-10 1986-07-16 Texas Instruments Incorporated Hall-Effekt-Bauelement und Verfahren zu seiner Herstellung
CH668146A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.

Also Published As

Publication number Publication date
GB9205801D0 (en) 1992-04-29
GB2253941A (en) 1992-09-23
GB2253941A8 (en) 1995-05-02
GB2253941B (en) 1995-01-04
DE4208544A1 (de) 1992-09-24
FR2674375A1 (fr) 1992-09-25
FR2674375B1 (fr) 2001-08-10

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