SI3001834T1 - Postopek izdelave z ytterbiumom dopiranega optičnega vlakna - Google Patents

Postopek izdelave z ytterbiumom dopiranega optičnega vlakna Download PDF

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SI3001834T1
SI3001834T1 SI201430671T SI201430671T SI3001834T1 SI 3001834 T1 SI3001834 T1 SI 3001834T1 SI 201430671 T SI201430671 T SI 201430671T SI 201430671 T SI201430671 T SI 201430671T SI 3001834 T1 SI3001834 T1 SI 3001834T1
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range
temperature
tube
precursors
burner
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SI201430671T
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Ranjan Sen
Maitreyee Saha
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Council Of Scientific & Industrial Research
Department of Electronics and Information Technology
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Publication of SI3001834T1 publication Critical patent/SI3001834T1/sl

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01853—Thermal after-treatment of preforms, e.g. dehydrating, consolidating, sintering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
    • C03B37/01815—Reactant deposition burners or deposition heating means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/02—Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor
    • C03B37/025—Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor from reheated softened tubes, rods, fibres or filaments, e.g. drawing fibres from preforms
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/34—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with rare earth metals, i.e. with Sc, Y or lanthanides, e.g. for laser-amplifiers
    • C03B2201/36—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with rare earth metals, i.e. with Sc, Y or lanthanides, e.g. for laser-amplifiers doped with rare earth metals and aluminium, e.g. Er-Al co-doped
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2203/00—Fibre product details, e.g. structure, shape
    • C03B2203/10—Internal structure or shape details
    • C03B2203/22—Radial profile of refractive index, composition or softening point
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/50—Multiple burner arrangements
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/60—Relationship between burner and deposit, e.g. position
    • C03B2207/66—Relative motion
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/80—Feeding the burner or the burner-heated deposition site
    • C03B2207/81—Constructional details of the feed line, e.g. heating, insulation, material, manifolds, filters
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/80—Feeding the burner or the burner-heated deposition site
    • C03B2207/90—Feeding the burner or the burner-heated deposition site with vapour generated from solid glass precursors, i.e. by sublimation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)
  • Glass Compositions (AREA)
  • Lasers (AREA)

Claims (14)

  1. POSTOPEK IZDELAVE Z YTTERBIUMOM DOPIRANEGA OPTIČNEGA VLAKNA PATENTNI ZAHTEVKI
    1. Postopek za izdelavo z ytterbiumom (Yb) dopiranega optičnega vlakna z metodo dopinga s parno fazo, omenjeni postopek obsega korake: (i) deponiranja plasti čistih silicijevih oblog znotraj cevke iz silicijevega steklenega substrata pri temperaturi glavnega gorilnika med 1900 in 1980 °C z uporabo MCVD postopka; (ii) sublimiranje AlCb in Yb (thd)3 v njihovi ustrezni sublimacijski komori pri temperaturi v območju od 100 do 170 °C in od 180 do 260 °C oziroma, da dobimo hlape Al-prekurzorjev in Yb-prekurzorjev; (iii) uvajanje predgretega helija v sublimacijsko komoro po koraku (ii) s pretokom v razponu od 10 do 50 sccm za Al-prekurzorje in 100 do 300 sccm za Yb-prekurzorje; (iv) transportiranje Al in Yb prekurzorje s helijem, dobljenim v koraku (iii), na cev substrata s prilagoditvijo temperature tračnega gorilnika v območju od 180 do 370 °C, pri čemer je gorilnik pritrjen pred vhodnim koncem cevke iz silicijevega substrata; (v) pretakanje O2 plina v SiCU izpiralko pri temperaturi v območju od 15 do 40 °C in pretoku v razponu od 80 do 150 sccm za pretakanje plinske mešanice S1CI4-O2 na substrat cevke; (vi) mešanje SiCU, O2, Al prekurzorjev, Yb-prekurzorjev in helija v substratu cevke s hkratno oksidacijo, da se tvori S1O2, AI2O3 in Yb2O3; (vii) deponiranje sintrane jedrne plasti, ki vsebuje SiO2-Al2C>3-Yb2O3 s ciljnim AI2O3 in koncentracijo Yb2O3, da dobimo deponirano cevko; (viii) zrušitev deponirane cevi pri temperaturi v razponu od 1900 do 2300 °C da dobimo izdelano predobliko; in (ix) vlečenje vlaken iz izdelane predoblike dobljene v koraku (viii), da dobimo z ytterbiumom (Yb) dopirana optična vlakna.
  2. 2. Postopek po zahtevku 1, kjer je v koraku (i) 4-10 plasti čistih silicijevih oblog deponiranih v substratu cevke.
  3. 3. Postopek po zahtevku 1, kjer je v koraku (i) temperatura glavnega gorilnika v razponu od 1910-1960 °C.
  4. 4. Postopek po zahtevku 1, kjer je v koraku (ii) temperatura sublimiranja AlCb v razponu od 120 do 160 °C.
  5. 5. Postopek po zahtevku 1, kjer je v koraku (ii) temperatura sublimiranja za Yb (thd)3 v razponu od 200 do 240 °C.
  6. 6. Postopek po zahtevku 1, kjer je v koraku (iv) temperatura tračnega gorilnika traku razponu od 200 do 350 °C.
  7. 7. Postopek po zahtevku 1, kjer je v koraku (vii) število temeljnih plasti v razponu od 1 do 40.
  8. 8. Postopek po zahtevku 1, kjer je v koraku (vii) glavna temperatura gorilnika odlaganja sintranega jedra v območju od 1770 do 1920 °C.
  9. 9. Postopek po zahtevku 8, kjer je v koraku (vii) glavna temperatura gorilnika odlaganja sintranega jedra v območju od 1820 do 1880 °C.
  10. 10. Postopek po zahtevku 1, kjer je v koraku (vii) sintrani jedrni sloj deponiran s hitrostjo prehoda glavnega gorilnika v razponu od 9 do 14 cm/min, pri čemer glavni gorilnik prehaja vzdolž dolžine cevke iz silicijevega substrata.
  11. 11. Postopek po zahtevku 1, kjer je v koraku (ix) NA (številčna odprtina) steklenega jedra v območju od 0,06 do 0,32.
  12. 12. Postopek po zahtevku 1, kjer se v koraku (viii) temperatura zrušitve giblje v območju 2050-2250 °C.
  13. 13. Postopek po zahtevku 1, kjer je dolžina izdelanih predoblik do 45 cm.
  14. 14. Postopek po zahtevku 1, kjer je premer jedra izdelanega vlakna v območju 10 do 50 pm iz skupnega premera 125 pm.
SI201430671T 2013-05-03 2014-03-26 Postopek izdelave z ytterbiumom dopiranega optičnega vlakna SI3001834T1 (sl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN1306DE2013 2013-05-03
PCT/IN2014/000190 WO2014178063A1 (en) 2013-05-03 2014-03-26 A process for fabrication of ytterbium doped optical fiber
EP14724803.3A EP3001834B1 (en) 2013-05-03 2014-03-26 A process for fabrication of ytterbium doped optical fiber

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SI3001834T1 true SI3001834T1 (sl) 2018-07-31

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US (1) US10040714B2 (sl)
EP (1) EP3001834B1 (sl)
JP (1) JP6393314B2 (sl)
CN (1) CN105492399B (sl)
CA (1) CA2910731C (sl)
DK (1) DK3001834T3 (sl)
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WO (1) WO2014178063A1 (sl)

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CA2910731A1 (en) 2014-11-06
CN105492399B (zh) 2019-04-23
US10040714B2 (en) 2018-08-07
JP2016524579A (ja) 2016-08-18
EP3001834B1 (en) 2018-03-07
US20160083284A1 (en) 2016-03-24
DK3001834T3 (en) 2018-05-07
JP6393314B2 (ja) 2018-09-19
CA2910731C (en) 2020-01-21
CN105492399A (zh) 2016-04-13
WO2014178063A1 (en) 2014-11-06
EP3001834A1 (en) 2016-04-06

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