SG97829A1 - Cleaning gas - Google Patents

Cleaning gas

Info

Publication number
SG97829A1
SG97829A1 SG200000081A SG200000081A SG97829A1 SG 97829 A1 SG97829 A1 SG 97829A1 SG 200000081 A SG200000081 A SG 200000081A SG 200000081 A SG200000081 A SG 200000081A SG 97829 A1 SG97829 A1 SG 97829A1
Authority
SG
Singapore
Prior art keywords
cleaning gas
cleaning
gas
Prior art date
Application number
SG200000081A
Other languages
English (en)
Inventor
Mouri Isamu
Tamura Tetsuya
Ohashi Mitsuya
Kawashima Tadayuki
Original Assignee
Central Class Company Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Class Company Ltd filed Critical Central Class Company Ltd
Publication of SG97829A1 publication Critical patent/SG97829A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
SG200000081A 1999-01-12 2000-01-06 Cleaning gas SG97829A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP480999 1999-01-12
JP11289190A JP2000265276A (ja) 1999-01-12 1999-10-12 クリーニングガス

Publications (1)

Publication Number Publication Date
SG97829A1 true SG97829A1 (en) 2003-08-20

Family

ID=26338647

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200000081A SG97829A1 (en) 1999-01-12 2000-01-06 Cleaning gas

Country Status (5)

Country Link
US (1) US6147006A (ko)
JP (1) JP2000265276A (ko)
KR (1) KR100335174B1 (ko)
SG (1) SG97829A1 (ko)
TW (1) TW577916B (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3433392B2 (ja) * 1999-01-12 2003-08-04 セントラル硝子株式会社 クリーニングガス及び真空処理装置のクリーニング方法
US6581612B1 (en) * 2001-04-17 2003-06-24 Applied Materials Inc. Chamber cleaning with fluorides of iodine
JP3421329B2 (ja) * 2001-06-08 2003-06-30 東京エレクトロン株式会社 薄膜形成装置の洗浄方法
EP1460678A4 (en) * 2001-07-31 2010-01-06 Air Liquide CLEANING METHOD AND APPARATUS AND METHOD AND APPARATUS FOR ETCHING
KR100444165B1 (ko) * 2001-12-27 2004-08-11 동부전자 주식회사 Ｃｉｆ3을 이용한 더미 웨이퍼의 스트립 방법
JP3855081B2 (ja) * 2002-07-01 2006-12-06 株式会社日立国際電気 フッ素ガスによるクリーニング機構を備えたｃｖｄ装置およびｃｖｄ装置のフッ素ガスによるクリーニング方法
US7964085B1 (en) 2002-11-25 2011-06-21 Applied Materials, Inc. Electrochemical removal of tantalum-containing materials
US20050028838A1 (en) * 2002-11-25 2005-02-10 Karl Brueckner Cleaning tantalum-containing deposits from process chamber components
US20050048742A1 (en) * 2003-08-26 2005-03-03 Tokyo Electron Limited Multiple grow-etch cyclic surface treatment for substrate preparation
US7141094B2 (en) * 2003-11-05 2006-11-28 Honeywell International Inc. Azeotrope-like compositions of iodine heptafluoride and hydrogen fluoride
JP5661444B2 (ja) * 2004-04-23 2015-01-28 東京エレクトロン株式会社 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム
JP4718795B2 (ja) * 2004-06-02 2011-07-06 ルネサスエレクトロニクス株式会社 気相成長装置内の処理方法
KR100953707B1 (ko) * 2004-08-24 2010-04-19 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 반도체 프로세싱 부품 및 이를 사용하는 반도체 제조방법
JP2006114780A (ja) * 2004-10-15 2006-04-27 Tokyo Electron Ltd 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム
JP4802977B2 (ja) * 2006-10-31 2011-10-26 東京エレクトロン株式会社 熱処理装置の運転方法、熱処理装置及び記憶媒体
US8636019B2 (en) * 2007-04-25 2014-01-28 Edwards Vacuum, Inc. In-situ removal of semiconductor process residues from dry pump surfaces
JP4994197B2 (ja) 2007-11-16 2012-08-08 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5356552B2 (ja) * 2012-01-30 2013-12-04 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法及び基板処理装置
JP6107198B2 (ja) * 2013-02-14 2017-04-05 セントラル硝子株式会社 クリーニングガス及びクリーニング方法
EP3442009B1 (en) * 2016-04-05 2022-05-04 Kanto Denka Kogyo Co., Ltd. Cleaning method for a semiconductor manufacturing device
TWI770150B (zh) * 2017-03-27 2022-07-11 日商關東電化工業股份有限公司 乾蝕刻方法及乾式清潔方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679215A (en) * 1996-01-02 1997-10-21 Lam Research Corporation Method of in situ cleaning a vacuum plasma processing chamber
JP2969087B2 (ja) * 1996-11-06 1999-11-02 日本エー・エス・エム株式会社 半導体基板の処理方法

Also Published As

Publication number Publication date
JP2000265276A (ja) 2000-09-26
KR100335174B1 (ko) 2002-05-04
KR20000057741A (ko) 2000-09-25
TW577916B (en) 2004-03-01
US6147006A (en) 2000-11-14

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