SG92794G - Process for manufacturing fine silica particles - Google Patents
Process for manufacturing fine silica particlesInfo
- Publication number
- SG92794G SG92794G SG92794A SG92794A SG92794G SG 92794 G SG92794 G SG 92794G SG 92794 A SG92794 A SG 92794A SG 92794 A SG92794 A SG 92794A SG 92794 G SG92794 G SG 92794G
- Authority
- SG
- Singapore
- Prior art keywords
- silica particles
- fine silica
- manufacturing fine
- manufacturing
- particles
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9818488A JPH0791051B2 (ja) | 1987-06-09 | 1988-04-22 | 微細シリカ粒子の製造方法 |
DE88109049T DE3885660T2 (de) | 1987-06-09 | 1988-06-07 | Verfahren zur Herstellung feiner Kieselsäurepartikel. |
EP88109049A EP0296401B1 (fr) | 1987-06-09 | 1988-06-07 | Procédé de fabrication de particules de silice fines |
SG92794A SG92794G (en) | 1987-06-09 | 1994-07-11 | Process for manufacturing fine silica particles |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14216787 | 1987-06-09 | ||
JP9818488A JPH0791051B2 (ja) | 1987-06-09 | 1988-04-22 | 微細シリカ粒子の製造方法 |
SG92794A SG92794G (en) | 1987-06-09 | 1994-07-11 | Process for manufacturing fine silica particles |
Publications (1)
Publication Number | Publication Date |
---|---|
SG92794G true SG92794G (en) | 1995-03-17 |
Family
ID=27308601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG92794A SG92794G (en) | 1987-06-09 | 1994-07-11 | Process for manufacturing fine silica particles |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0296401B1 (fr) |
JP (1) | JPH0791051B2 (fr) |
DE (1) | DE3885660T2 (fr) |
SG (1) | SG92794G (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5350847B2 (ja) * | 2009-03-19 | 2013-11-27 | 花王株式会社 | 板状シリカ粒子の製造方法 |
CN104024366A (zh) * | 2011-12-27 | 2014-09-03 | 旭硝子株式会社 | 研磨剂用添加剂及研磨方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
US3567397A (en) * | 1967-10-11 | 1971-03-02 | Westinghouse Electric Corp | Apparatus for obtaining a dross-free crystalline growth melt |
JPS51112924A (en) * | 1975-03-28 | 1976-10-05 | Asahi Chem Ind Co Ltd | A process for producing silicate fibers |
JPS6018634B2 (ja) * | 1978-09-27 | 1985-05-11 | ソニー株式会社 | 結晶引上げ装置 |
JPS5939792A (ja) * | 1982-08-27 | 1984-03-05 | Tanaka Kikinzoku Kogyo Kk | 単結晶用ルツボ |
CA1261715A (fr) * | 1984-07-06 | 1989-09-26 | General Signal Corporation | Methode et dispositif d'epitaxie de mononcristaux de materiaux semiconducteurs, a partir de creusets de faible profondeur, selon la technique de czochralski |
CA1271307A (fr) * | 1985-06-27 | 1990-07-10 | Iwao Ohshima | Fabrication de silice extra-pur |
-
1988
- 1988-04-22 JP JP9818488A patent/JPH0791051B2/ja not_active Expired - Lifetime
- 1988-06-07 EP EP88109049A patent/EP0296401B1/fr not_active Expired - Lifetime
- 1988-06-07 DE DE88109049T patent/DE3885660T2/de not_active Expired - Fee Related
-
1994
- 1994-07-11 SG SG92794A patent/SG92794G/en unknown
Also Published As
Publication number | Publication date |
---|---|
DE3885660T2 (de) | 1994-04-28 |
JPH0791051B2 (ja) | 1995-10-04 |
DE3885660D1 (de) | 1993-12-23 |
EP0296401A1 (fr) | 1988-12-28 |
JPS6476908A (en) | 1989-03-23 |
EP0296401B1 (fr) | 1993-11-18 |
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