SG88730A1 - Voltage-boosting circuit with mode signal - Google Patents
Voltage-boosting circuit with mode signalInfo
- Publication number
- SG88730A1 SG88730A1 SG9700720A SG1997000720A SG88730A1 SG 88730 A1 SG88730 A1 SG 88730A1 SG 9700720 A SG9700720 A SG 9700720A SG 1997000720 A SG1997000720 A SG 1997000720A SG 88730 A1 SG88730 A1 SG 88730A1
- Authority
- SG
- Singapore
- Prior art keywords
- voltage
- mode signal
- boosting circuit
- boosting
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06982096A JP3601901B2 (ja) | 1996-03-26 | 1996-03-26 | 昇圧回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG88730A1 true SG88730A1 (en) | 2002-05-21 |
Family
ID=13413787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG9700720A SG88730A1 (en) | 1996-03-26 | 1997-03-13 | Voltage-boosting circuit with mode signal |
Country Status (6)
Country | Link |
---|---|
US (1) | US5912564A (fr) |
EP (1) | EP0798845B1 (fr) |
JP (1) | JP3601901B2 (fr) |
KR (1) | KR100347356B1 (fr) |
DE (1) | DE69712825T2 (fr) |
SG (1) | SG88730A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9007791D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
GB9007790D0 (en) * | 1990-04-06 | 1990-06-06 | Lines Valerie L | Dynamic memory wordline driver scheme |
JP2000276893A (ja) | 1999-03-23 | 2000-10-06 | Nec Corp | ブースト回路 |
DE10031207A1 (de) * | 2000-06-27 | 2002-01-10 | Infineon Technologies Ag | Integrierte Schaltung mit einer Spannungspumpenschaltung |
KR100536603B1 (ko) * | 2003-07-10 | 2005-12-14 | 삼성전자주식회사 | 선택 모드를 갖는 전하 펌프 회로 |
US7200053B2 (en) * | 2004-09-01 | 2007-04-03 | Micron Technology, Inc. | Level shifter for low voltage operation |
KR100612422B1 (ko) * | 2005-01-18 | 2006-08-16 | 삼성전자주식회사 | 다중 배속 동작 모드를 갖는 반도체 메모리 장치 |
KR100968152B1 (ko) | 2008-06-04 | 2010-07-06 | 주식회사 하이닉스반도체 | 레벨 시프터 회로 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4583157A (en) * | 1985-02-08 | 1986-04-15 | At&T Bell Laboratories | Integrated circuit having a variably boosted node |
EP0552404A1 (fr) * | 1992-07-23 | 1993-07-28 | Siemens Aktiengesellschaft | Circuit pour la limitation de la tension de sortie d'un circuit surélévateur de tension |
US5428576A (en) * | 1990-05-11 | 1995-06-27 | Kabushiki Kaisha Toshiba | Semiconductor device and method of screening the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0562466A (ja) * | 1991-09-02 | 1993-03-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2830593B2 (ja) * | 1992-03-23 | 1998-12-02 | 日本電気株式会社 | 昇圧回路 |
KR960008282B1 (ko) * | 1993-03-12 | 1996-06-21 | 김광호 | 가변전원을 공급하는 워드라인 드라이버를 가지는 반도체 메모리장치 |
JPH07262796A (ja) * | 1994-03-22 | 1995-10-13 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH07287993A (ja) * | 1994-04-15 | 1995-10-31 | Toshiba Corp | 半導体記憶装置 |
JP3157697B2 (ja) * | 1995-04-28 | 2001-04-16 | 日本電気株式会社 | 半導体記憶装置 |
US5677645A (en) * | 1995-05-08 | 1997-10-14 | Micron Technology, Inc. | Vccp pump for low voltage operation |
JP3672968B2 (ja) * | 1995-05-29 | 2005-07-20 | 株式会社ルネサステクノロジ | ブースト回路 |
-
1996
- 1996-03-26 JP JP06982096A patent/JP3601901B2/ja not_active Expired - Fee Related
-
1997
- 1997-02-27 EP EP97103209A patent/EP0798845B1/fr not_active Expired - Lifetime
- 1997-02-27 DE DE69712825T patent/DE69712825T2/de not_active Expired - Fee Related
- 1997-03-03 KR KR1019970006905A patent/KR100347356B1/ko not_active IP Right Cessation
- 1997-03-10 US US08/814,598 patent/US5912564A/en not_active Expired - Fee Related
- 1997-03-13 SG SG9700720A patent/SG88730A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4583157A (en) * | 1985-02-08 | 1986-04-15 | At&T Bell Laboratories | Integrated circuit having a variably boosted node |
US5428576A (en) * | 1990-05-11 | 1995-06-27 | Kabushiki Kaisha Toshiba | Semiconductor device and method of screening the same |
EP0552404A1 (fr) * | 1992-07-23 | 1993-07-28 | Siemens Aktiengesellschaft | Circuit pour la limitation de la tension de sortie d'un circuit surélévateur de tension |
Also Published As
Publication number | Publication date |
---|---|
JPH09265794A (ja) | 1997-10-07 |
DE69712825T2 (de) | 2003-01-16 |
KR100347356B1 (ko) | 2002-10-30 |
EP0798845A2 (fr) | 1997-10-01 |
JP3601901B2 (ja) | 2004-12-15 |
EP0798845A3 (fr) | 1999-04-28 |
EP0798845B1 (fr) | 2002-05-29 |
KR970067328A (ko) | 1997-10-13 |
US5912564A (en) | 1999-06-15 |
DE69712825D1 (de) | 2002-07-04 |
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