SG86444A1 - Decaborane ion source - Google Patents

Decaborane ion source

Info

Publication number
SG86444A1
SG86444A1 SG200005703A SG200005703A SG86444A1 SG 86444 A1 SG86444 A1 SG 86444A1 SG 200005703 A SG200005703 A SG 200005703A SG 200005703 A SG200005703 A SG 200005703A SG 86444 A1 SG86444 A1 SG 86444A1
Authority
SG
Singapore
Prior art keywords
ion source
decaborane ion
decaborane
source
ion
Prior art date
Application number
SG200005703A
Other languages
English (en)
Inventor
Neil Horsky Thomas
Stuart Perel Alexander
Keith Loizides William
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Publication of SG86444A1 publication Critical patent/SG86444A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
SG200005703A 1999-10-11 2000-10-06 Decaborane ion source SG86444A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/416,159 US6288403B1 (en) 1999-10-11 1999-10-11 Decaborane ionizer

Publications (1)

Publication Number Publication Date
SG86444A1 true SG86444A1 (en) 2002-02-19

Family

ID=23648806

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200005703A SG86444A1 (en) 1999-10-11 2000-10-06 Decaborane ion source

Country Status (6)

Country Link
US (2) US6288403B1 (ko)
EP (1) EP1093149B1 (ko)
JP (1) JP5062458B2 (ko)
KR (1) KR100571015B1 (ko)
SG (1) SG86444A1 (ko)
TW (1) TW486712B (ko)

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US7838850B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. External cathode ion source
EP2426693A3 (en) * 1999-12-13 2013-01-16 Semequip, Inc. Ion source
US7838842B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
EP1538655A3 (en) * 1999-12-13 2009-06-03 Semequip, Inc. Ion implantation ion source
US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US6670623B2 (en) * 2001-03-07 2003-12-30 Advanced Technology Materials, Inc. Thermal regulation of an ion implantation system
US20030030010A1 (en) * 2001-08-07 2003-02-13 Perel Alexander S. Decaborane vaporizer having improved vapor flow
US20030111014A1 (en) * 2001-12-18 2003-06-19 Donatucci Matthew B. Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds
GB2387022B (en) * 2002-03-28 2005-12-21 Applied Materials Inc Monatomic boron ion source and method
US7518124B2 (en) * 2002-03-28 2009-04-14 Applied Materials, Inc. Monatomic dopant ion source and method
US7138768B2 (en) * 2002-05-23 2006-11-21 Varian Semiconductor Equipment Associates, Inc. Indirectly heated cathode ion source
JP4048837B2 (ja) * 2002-05-24 2008-02-20 日新イオン機器株式会社 イオン源の運転方法およびイオン源装置
CN100359652C (zh) * 2002-06-26 2008-01-02 山米奎普公司 一种制造一半导体器件的方法
AU2003258960A1 (en) 2002-06-26 2004-01-19 Semequip Inc. Ion implantation device and method
EP1808885A1 (en) * 2002-06-26 2007-07-18 Semequip, Inc. A semiconductor device and method of fabricating a semiconductor device
US6686595B2 (en) * 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US7300038B2 (en) * 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US6868869B2 (en) * 2003-02-19 2005-03-22 Advanced Technology Materials, Inc. Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases
US20080200020A1 (en) * 2003-06-18 2008-08-21 Semequip, Inc. Semiconductor device and method of fabricating a semiconductor device
US6909839B2 (en) * 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material
JP4325852B2 (ja) * 2003-09-19 2009-09-02 Ｏｋｉセミコンダクタ株式会社 イオンソース用ベーパライザ
JP4643588B2 (ja) 2003-12-12 2011-03-02 セメクイップ， インコーポレイテッド 固体から昇華した蒸気の流れの制御
US20080073559A1 (en) * 2003-12-12 2008-03-27 Horsky Thomas N Controlling the flow of vapors sublimated from solids
US7791047B2 (en) * 2003-12-12 2010-09-07 Semequip, Inc. Method and apparatus for extracting ions from an ion source for use in ion implantation
US7342236B2 (en) * 2004-02-23 2008-03-11 Veeco Instruments, Inc. Fluid-cooled ion source
US7741621B2 (en) * 2004-07-14 2010-06-22 City University Of Hong Kong Apparatus and method for focused electric field enhanced plasma-based ion implantation
KR100620227B1 (ko) * 2004-12-14 2006-09-08 동부일렉트로닉스 주식회사 이온 주입 장치의 증발기 조절 방법
US20080191153A1 (en) * 2005-03-16 2008-08-14 Advanced Technology Materials, Inc. System For Delivery Of Reagents From Solid Sources Thereof
US7446326B2 (en) * 2005-08-31 2008-11-04 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implanter productivity
US20070178678A1 (en) * 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US7473606B2 (en) * 2006-02-22 2009-01-06 United Microelectronics Corp. Method for fabricating metal-oxide semiconductor transistors
US8110815B2 (en) * 2006-06-12 2012-02-07 Semequip, Inc. Vapor delivery to devices under vacuum
US20080241805A1 (en) * 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US8013312B2 (en) * 2006-11-22 2011-09-06 Semequip, Inc. Vapor delivery system useful with ion sources and vaporizer for use in such system
US20080305598A1 (en) * 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
WO2009039382A1 (en) 2007-09-21 2009-03-26 Semequip. Inc. Method for extending equipment uptime in ion implantation
KR20110025775A (ko) * 2008-05-30 2011-03-11 액셀리스 테크놀러지스, 인크. 수소화 붕소 임플란트 시 반도체 웨이퍼 상 입자 제어
US7812321B2 (en) * 2008-06-11 2010-10-12 Varian Semiconductor Equipment Associates, Inc. Techniques for providing a multimode ion source
US7759657B2 (en) 2008-06-19 2010-07-20 Axcelis Technologies, Inc. Methods for implanting B22Hx and its ionized lower mass byproducts
US20100019141A1 (en) * 2008-07-25 2010-01-28 Varian Semiconductor Equipment Associates, Inc. Energy contamination monitor with neutral current detection
JP5220549B2 (ja) * 2008-10-20 2013-06-26 本田技研工業株式会社 アウタロータ型多極発電機のステータ構造体
SG174578A1 (en) * 2009-04-10 2011-10-28 Applied Materials Inc Use special ion source apparatus and implant with molecular ions to process hdd (high density magnetic disks) with patterned magnetic domains
US8350236B2 (en) * 2010-01-12 2013-01-08 Axcelis Technologies, Inc. Aromatic molecular carbon implantation processes
US8344337B2 (en) 2010-04-21 2013-01-01 Axcelis Technologies, Inc. Silaborane implantation processes
CN104487608A (zh) 2012-05-31 2015-04-01 高级技术材料公司 基于源试剂的用于批量沉积的高物质通量流体的输送
US9134074B2 (en) 2012-10-04 2015-09-15 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for thermal control of ion sources and sputtering targets
TWI559355B (zh) * 2014-12-23 2016-11-21 漢辰科技股份有限公司 離子源
TWI590285B (zh) * 2015-02-09 2017-07-01 漢辰科技股份有限公司 具有蒸發器的離子源
WO2018185987A1 (ja) * 2017-04-06 2018-10-11 株式会社アルバック イオン源及びイオン注入装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661308A (en) * 1996-05-30 1997-08-26 Eaton Corporation Method and apparatus for ion formation in an ion implanter
JPH10163123A (ja) * 1996-12-03 1998-06-19 Fujitsu Ltd イオン注入方法および半導体装置の製造方法

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DE1900569C3 (de) * 1969-01-07 1976-01-08 Varian Mat Gmbh, 2800 Bremen Festkörper-Ionenquelle
US3700892A (en) * 1971-08-25 1972-10-24 Atomic Energy Commission Separation of mercury isotopes
JPH09245997A (ja) * 1996-03-05 1997-09-19 Nissin Electric Co Ltd カバーで覆われた内壁とアンテナを持つプラズマ室
US5914494A (en) * 1996-03-27 1999-06-22 Thermoceramix, Llc Arc chamber for an ion implantation system
US6072182A (en) 1998-10-01 2000-06-06 California Institute Of Technology High-efficiency electron ionizer for a mass spectrometer array
US6107634A (en) * 1998-04-30 2000-08-22 Eaton Corporation Decaborane vaporizer
JP4303337B2 (ja) * 1998-12-02 2009-07-29 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー 分子イオンエンハンストイオン源装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661308A (en) * 1996-05-30 1997-08-26 Eaton Corporation Method and apparatus for ion formation in an ion implanter
JPH10163123A (ja) * 1996-12-03 1998-06-19 Fujitsu Ltd イオン注入方法および半導体装置の製造方法

Also Published As

Publication number Publication date
KR20010050893A (ko) 2001-06-25
US6288403B1 (en) 2001-09-11
EP1093149A2 (en) 2001-04-18
EP1093149A3 (en) 2003-01-02
US20010054699A1 (en) 2001-12-27
JP5062458B2 (ja) 2012-10-31
KR100571015B1 (ko) 2006-04-13
TW486712B (en) 2002-05-11
EP1093149B1 (en) 2011-12-07
US6958481B2 (en) 2005-10-25
JP2001135253A (ja) 2001-05-18

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