SG84593A1 - System and method for cleaning contaminated surfaces in an ion implanter - Google Patents

System and method for cleaning contaminated surfaces in an ion implanter

Info

Publication number
SG84593A1
SG84593A1 SG200002362A SG200002362A SG84593A1 SG 84593 A1 SG84593 A1 SG 84593A1 SG 200002362 A SG200002362 A SG 200002362A SG 200002362 A SG200002362 A SG 200002362A SG 84593 A1 SG84593 A1 SG 84593A1
Authority
SG
Singapore
Prior art keywords
ion implanter
contaminated surfaces
cleaning contaminated
cleaning
implanter
Prior art date
Application number
SG200002362A
Other languages
English (en)
Inventor
David Bernstein James
Miltiadis Kopalidis Peter
Scott Freer Brian
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Publication of SG84593A1 publication Critical patent/SG84593A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG200002362A 1999-05-10 2000-04-27 System and method for cleaning contaminated surfaces in an ion implanter SG84593A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/309,096 US6221169B1 (en) 1999-05-10 1999-05-10 System and method for cleaning contaminated surfaces in an ion implanter

Publications (1)

Publication Number Publication Date
SG84593A1 true SG84593A1 (en) 2001-11-20

Family

ID=23196677

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200002362A SG84593A1 (en) 1999-05-10 2000-04-27 System and method for cleaning contaminated surfaces in an ion implanter

Country Status (7)

Country Link
US (1) US6221169B1 (de)
EP (1) EP1052676B1 (de)
JP (1) JP2001003154A (de)
KR (1) KR20000077196A (de)
DE (1) DE60044272D1 (de)
SG (1) SG84593A1 (de)
TW (1) TW452820B (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815362B1 (en) * 2001-05-04 2004-11-09 Lam Research Corporation End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US6716727B2 (en) * 2001-10-26 2004-04-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for plasma doping and ion implantation in an integrated processing system
US6955707B2 (en) * 2002-06-10 2005-10-18 The Boc Group, Inc. Method of recycling fluorine using an adsorption purification process
JP4374487B2 (ja) * 2003-06-06 2009-12-02 株式会社Ｓｅｎ イオン源装置およびそのクリーニング最適化方法
US7055263B2 (en) * 2003-11-25 2006-06-06 Air Products And Chemicals, Inc. Method for cleaning deposition chambers for high dielectric constant materials
US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
KR100883148B1 (ko) * 2003-12-12 2009-02-10 세미이큅, 인코포레이티드 이온 주입시 설비의 가동 시간을 늘리기 위한 방법과 장치
US20080073559A1 (en) * 2003-12-12 2008-03-27 Horsky Thomas N Controlling the flow of vapors sublimated from solids
KR100558550B1 (ko) * 2003-12-16 2006-03-10 삼성전자주식회사 플라즈마 이온 주입 장치의 포스포러스 세정방법
US7078689B1 (en) * 2004-10-25 2006-07-18 Kla-Tencor Technologies Corporation Integrated electron beam and contaminant removal system
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US6992311B1 (en) * 2005-01-18 2006-01-31 Axcelis Technologies, Inc. In-situ cleaning of beam defining apertures in an ion implanter
SG160401A1 (en) * 2005-03-16 2010-04-29 Advanced Tech Materials System for delivery of reagents from solid sources thereof
US7199383B2 (en) * 2005-08-25 2007-04-03 United Microelectronics Corp. Method for reducing particles during ion implantation
US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
US7511287B2 (en) * 2005-09-21 2009-03-31 Axcelis Technologies, Inc. Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
JP4875886B2 (ja) * 2005-11-22 2012-02-15 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US8278222B2 (en) * 2005-11-22 2012-10-02 Air Products And Chemicals, Inc. Selective etching and formation of xenon difluoride
SG171606A1 (en) * 2006-04-26 2011-06-29 Advanced Tech Materials Cleaning of semiconductor processing systems
US20080142039A1 (en) * 2006-12-13 2008-06-19 Advanced Technology Materials, Inc. Removal of nitride deposits
WO2009039382A1 (en) * 2007-09-21 2009-03-26 Semequip. Inc. Method for extending equipment uptime in ion implantation
SG188150A1 (en) 2008-02-11 2013-03-28 Advanced Tech Materials Ion source cleaning in semiconductor processing systems
CN102047376A (zh) * 2008-05-30 2011-05-04 艾克塞利斯科技公司 注入硼烷时在半导体基片上的粒子控制
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US9627180B2 (en) * 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning
US20110108058A1 (en) * 2009-11-11 2011-05-12 Axcelis Technologies, Inc. Method and apparatus for cleaning residue from an ion source component
US20130017644A1 (en) * 2011-02-18 2013-01-17 Air Products And Chemicals, Inc. Fluorine Based Chamber Clean With Nitrogen Trifluoride Backup
CN104272433B (zh) 2012-02-14 2018-06-05 恩特格里斯公司 用于改善注入束和源寿命性能的碳掺杂剂气体和协流
US9530615B2 (en) 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
US9887067B2 (en) 2014-12-03 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
CN104607415A (zh) * 2014-12-19 2015-05-13 张远海 一种车灯等离子清洗工艺
US10522330B2 (en) 2015-06-12 2019-12-31 Varian Semiconductor Equipment Associates, Inc. In-situ plasma cleaning of process chamber components
TWI593473B (zh) * 2015-10-28 2017-08-01 漢辰科技股份有限公司 清潔靜電吸盤的方法
US20180247800A1 (en) * 2017-02-28 2018-08-30 International Business Machines Corporation Gallium implantation cleaning method
TWI795448B (zh) * 2017-10-09 2023-03-11 美商艾克塞利斯科技公司 用於在角能量過濾器區域中穩定或移除射束線組件上所形成之膜的離子植入系統及方法
MX2020006823A (es) * 2017-12-28 2020-09-03 Jfe Steel Corp Chapa de acero electrico de grano orientado.

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703183A (en) * 1985-12-05 1987-10-27 Eaton Corporation Ion implantation chamber purification method and apparatus
US5144147A (en) * 1990-08-31 1992-09-01 Kabushiki Kaisha Toshiba Ion implantation apparatus and method of cleaning the same
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132628A (ja) * 1983-01-20 1984-07-30 Matsushita Electronics Corp ドライエツチング装置
JP2821751B2 (ja) * 1988-12-06 1998-11-05 東京エレクトロン株式会社 イオン注入装置のクリーニング方法
JPH06103682B2 (ja) * 1990-08-09 1994-12-14 富士通株式会社 光励起ドライクリーニング方法および装置
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
JPH07169746A (ja) * 1993-12-14 1995-07-04 Ebara Corp 低エネルギー中性粒子線を用いた微細加工装置
US5514246A (en) 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
US5633506A (en) * 1995-07-17 1997-05-27 Eaton Corporation Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses
US5843239A (en) 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
US5940724A (en) * 1997-04-30 1999-08-17 International Business Machines Corporation Method for extended ion implanter source lifetime
GB2325561B (en) * 1997-05-20 2001-10-17 Applied Materials Inc Apparatus for and methods of implanting desired chemical species in semiconductor substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703183A (en) * 1985-12-05 1987-10-27 Eaton Corporation Ion implantation chamber purification method and apparatus
US5144147A (en) * 1990-08-31 1992-09-01 Kabushiki Kaisha Toshiba Ion implantation apparatus and method of cleaning the same
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter

Also Published As

Publication number Publication date
DE60044272D1 (de) 2010-06-10
TW452820B (en) 2001-09-01
US6221169B1 (en) 2001-04-24
EP1052676A3 (de) 2001-05-23
EP1052676A2 (de) 2000-11-15
KR20000077196A (ko) 2000-12-26
JP2001003154A (ja) 2001-01-09
EP1052676B1 (de) 2010-04-28

Similar Documents

Publication Publication Date Title
SG84593A1 (en) System and method for cleaning contaminated surfaces in an ion implanter
GB0002400D0 (en) Cluster tool method and apparatus using plasma immersion ion implantation
SG70631A1 (en) Plasma processing system and plasma processing method
AU2002216269A1 (en) Ion accelaration method and apparatus in an ion implantation system
HK1045777A1 (zh) 用於迷你向導實施的系統與方法
EP1100119A4 (de) Verfahren zur plasmabearbeitung
SG87109A1 (en) System and method for cleaning silicon-coated surfaces in an ion implanter
EP1279088A4 (de) System und verfahren zur automatisierten dokumentverarbeitung
GB2389228B (en) Ion beam processing method and apparatus therefor
GB2355108B (en) Device and method for alternating operation of multiple ion sources
IL131711A0 (en) Method and apparatus for mss spoofing
GB0027703D0 (en) Method and apparatus for 3D representation
AU2001282300A1 (en) System and method for removing particles entrained in an ion beam
EP1115146A4 (de) Verfahren und vorrichtung zur vakuumbehandlung
AU2001279952A1 (en) System and method for removing contaminant particles relative to an ion beam
IL165886A0 (en) Method for photosensitized decontamination of surfaces
GB0010455D0 (en) Ion generation method and filament for ion generation apparatus
EP1063201A4 (de) Verfahren zur entfernung von schadstoffionen und dafür verwendete substanz
IL138264A0 (en) Plasma processing apparatus and plasma processing method
GB9802112D0 (en) Method of trapping ions in an ion trapping device
GB0004175D0 (en) Ion implantation method and ion implantation equipment
EP1052688A4 (de) Verfahren und vorrichtung zur scheibenbehandlung
GB9900145D0 (en) Apparatus and method for monitoring and tuning an ion beam in ion implantation apparatus
AU6023500A (en) Method for removing harmful ion and remover for use in the same
EP1156516A4 (de) Verfahren und vorrichtung zur plasmabehandlung