SG82676A1 - Continuously variable aperture for high-energy ion implanter - Google Patents
Continuously variable aperture for high-energy ion implanterInfo
- Publication number
- SG82676A1 SG82676A1 SG200000743A SG200000743A SG82676A1 SG 82676 A1 SG82676 A1 SG 82676A1 SG 200000743 A SG200000743 A SG 200000743A SG 200000743 A SG200000743 A SG 200000743A SG 82676 A1 SG82676 A1 SG 82676A1
- Authority
- SG
- Singapore
- Prior art keywords
- continuously variable
- ion implanter
- variable aperture
- energy ion
- aperture
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
Landscapes
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Particle Accelerators (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/253,375 US6207964B1 (en) | 1999-02-19 | 1999-02-19 | Continuously variable aperture for high-energy ion implanter |
Publications (1)
Publication Number | Publication Date |
---|---|
SG82676A1 true SG82676A1 (en) | 2001-08-21 |
Family
ID=22960006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200000743A SG82676A1 (en) | 1999-02-19 | 2000-02-09 | Continuously variable aperture for high-energy ion implanter |
Country Status (7)
Country | Link |
---|---|
US (1) | US6207964B1 (ja) |
EP (1) | EP1030344B1 (ja) |
JP (1) | JP4915490B2 (ja) |
KR (1) | KR100485534B1 (ja) |
DE (1) | DE60016481T2 (ja) |
SG (1) | SG82676A1 (ja) |
TW (1) | TW590318U (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6507033B1 (en) * | 1999-03-29 | 2003-01-14 | The Regents Of The University Of California | Versatile, high-sensitivity faraday cup array for ion implanters |
US6501078B1 (en) * | 2000-03-16 | 2002-12-31 | Applied Materials, Inc. | Ion extraction assembly |
US6320334B1 (en) | 2000-03-27 | 2001-11-20 | Applied Materials, Inc. | Controller for a linear accelerator |
US6885014B2 (en) * | 2002-05-01 | 2005-04-26 | Axcelis Technologies, Inc. | Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam |
US6703628B2 (en) | 2000-07-25 | 2004-03-09 | Axceliss Technologies, Inc | Method and system for ion beam containment in an ion beam guide |
US6664547B2 (en) | 2002-05-01 | 2003-12-16 | Axcelis Technologies, Inc. | Ion source providing ribbon beam with controllable density profile |
US6664548B2 (en) | 2002-05-01 | 2003-12-16 | Axcelis Technologies, Inc. | Ion source and coaxial inductive coupler for ion implantation system |
US6828572B2 (en) * | 2003-04-01 | 2004-12-07 | Axcelis Technologies, Inc. | Ion beam incident angle detector for ion implant systems |
US6891174B2 (en) * | 2003-07-31 | 2005-05-10 | Axcelis Technologies, Inc. | Method and system for ion beam containment using photoelectrons in an ion beam guide |
US20050061997A1 (en) * | 2003-09-24 | 2005-03-24 | Benveniste Victor M. | Ion beam slit extraction with mass separation |
TW200707497A (en) | 2005-06-03 | 2007-02-16 | Axcelis Tech Inc | Particulate prevention in ion implantation |
US7674687B2 (en) * | 2005-07-27 | 2010-03-09 | Silicon Genesis Corporation | Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process |
US7863157B2 (en) * | 2006-03-17 | 2011-01-04 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a layer transfer process |
EP2002484A4 (en) | 2006-04-05 | 2016-06-08 | Silicon Genesis Corp | METHOD AND STRUCTURE FOR MANUFACTURING PHOTOVOLTAIC CELLS USING A LAYER TRANSFER PROCESS |
US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
US7629597B2 (en) * | 2006-08-18 | 2009-12-08 | Axcelis Technologies, Inc. | Deposition reduction system for an ion implanter |
US20080128641A1 (en) * | 2006-11-08 | 2008-06-05 | Silicon Genesis Corporation | Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials |
US20090206275A1 (en) * | 2007-10-03 | 2009-08-20 | Silcon Genesis Corporation | Accelerator particle beam apparatus and method for low contaminate processing |
US8987691B2 (en) | 2009-09-03 | 2015-03-24 | Advanced Ion Beam Technology, Inc. | Ion implanter and ion implant method thereof |
US20110049383A1 (en) * | 2009-09-03 | 2011-03-03 | Advanced Ion Beam Technology, Inc. | Ion implanter and ion implant method thereof |
US8198610B2 (en) * | 2009-10-20 | 2012-06-12 | Advanced Ion Beam Technology, Inc. | Ion implanter with variable aperture and ion implant method thereof |
US8669539B2 (en) * | 2010-03-29 | 2014-03-11 | Advanced Ion Beam Technology, Inc. | Implant method and implanter by using a variable aperture |
US8309444B2 (en) | 2010-07-07 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method of dosage profile control |
JP6253362B2 (ja) * | 2013-11-21 | 2017-12-27 | 住友重機械イオンテクノロジー株式会社 | 高エネルギーイオン注入装置、ビーム電流調整装置、及びビーム電流調整方法 |
US9953801B1 (en) | 2016-11-29 | 2018-04-24 | Axcelis Technologies, Inc. | Two-axis variable width mass resolving aperture with fast acting shutter motion |
CN107195518A (zh) * | 2017-06-22 | 2017-09-22 | 京东方科技集团股份有限公司 | 离子注入量调节装置及方法、离子注入设备、判断方法 |
CN110164582A (zh) * | 2019-05-31 | 2019-08-23 | 钱铁威 | 一种可对快中子束径调整的中子准直装置 |
CN112758696B (zh) * | 2021-01-19 | 2023-07-11 | 埃特曼半导体技术有限公司 | 真空样品驱动装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017403A (en) * | 1974-07-31 | 1977-04-12 | United Kingdom Atomic Energy Authority | Ion beam separators |
US4804879A (en) * | 1986-05-21 | 1989-02-14 | Mitsubishi Denki Kabushiki Kaisha | Deflecting electromagnet apparatus with moveable pole piece |
US5063294A (en) * | 1989-05-17 | 1991-11-05 | Kabushiki Kaisha Kobe Seiko Sho | Converged ion beam apparatus |
US5130552A (en) * | 1990-12-17 | 1992-07-14 | Applied Materials, Inc. | Improved ion implantation using a variable mass resolving system |
US5206253A (en) * | 1989-05-26 | 1993-04-27 | Boehringer Mannheim, Gmbh | Disphosphonic acid derivatives, processes for their production and pharmaceutical preparations containing these compounds |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1518282A (en) * | 1974-07-31 | 1978-07-19 | Atomic Energy Authority Uk | Ion beam separators |
JPH02295040A (ja) * | 1989-05-10 | 1990-12-05 | Hitachi Ltd | 集束イオンビーム装置 |
JP3034009B2 (ja) * | 1990-10-22 | 2000-04-17 | 株式会社日立製作所 | イオン打込み装置 |
GB9515090D0 (en) * | 1995-07-21 | 1995-09-20 | Applied Materials Inc | An ion beam apparatus |
US5780863A (en) * | 1997-04-29 | 1998-07-14 | Eaton Corporation | Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter |
US5998798A (en) * | 1998-06-11 | 1999-12-07 | Eaton Corporation | Ion dosage measurement apparatus for an ion beam implanter and method |
-
1999
- 1999-02-19 US US09/253,375 patent/US6207964B1/en not_active Expired - Lifetime
-
2000
- 2000-02-09 SG SG200000743A patent/SG82676A1/en unknown
- 2000-02-09 TW TW093203137U patent/TW590318U/zh not_active IP Right Cessation
- 2000-02-16 DE DE60016481T patent/DE60016481T2/de not_active Expired - Lifetime
- 2000-02-16 EP EP00301220A patent/EP1030344B1/en not_active Expired - Lifetime
- 2000-02-17 JP JP2000039408A patent/JP4915490B2/ja not_active Expired - Lifetime
- 2000-02-19 KR KR10-2000-0008027A patent/KR100485534B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017403A (en) * | 1974-07-31 | 1977-04-12 | United Kingdom Atomic Energy Authority | Ion beam separators |
US4804879A (en) * | 1986-05-21 | 1989-02-14 | Mitsubishi Denki Kabushiki Kaisha | Deflecting electromagnet apparatus with moveable pole piece |
US5063294A (en) * | 1989-05-17 | 1991-11-05 | Kabushiki Kaisha Kobe Seiko Sho | Converged ion beam apparatus |
US5206253A (en) * | 1989-05-26 | 1993-04-27 | Boehringer Mannheim, Gmbh | Disphosphonic acid derivatives, processes for their production and pharmaceutical preparations containing these compounds |
US5130552A (en) * | 1990-12-17 | 1992-07-14 | Applied Materials, Inc. | Improved ion implantation using a variable mass resolving system |
Also Published As
Publication number | Publication date |
---|---|
US6207964B1 (en) | 2001-03-27 |
JP4915490B2 (ja) | 2012-04-11 |
EP1030344A2 (en) | 2000-08-23 |
DE60016481T2 (de) | 2005-12-15 |
TW590318U (en) | 2004-06-01 |
DE60016481D1 (de) | 2005-01-13 |
KR20000058112A (ko) | 2000-09-25 |
KR100485534B1 (ko) | 2005-04-27 |
EP1030344B1 (en) | 2004-12-08 |
EP1030344A3 (en) | 2001-05-02 |
JP2000243342A (ja) | 2000-09-08 |
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