SG82676A1 - Continuously variable aperture for high-energy ion implanter - Google Patents

Continuously variable aperture for high-energy ion implanter

Info

Publication number
SG82676A1
SG82676A1 SG200000743A SG200000743A SG82676A1 SG 82676 A1 SG82676 A1 SG 82676A1 SG 200000743 A SG200000743 A SG 200000743A SG 200000743 A SG200000743 A SG 200000743A SG 82676 A1 SG82676 A1 SG 82676A1
Authority
SG
Singapore
Prior art keywords
continuously variable
ion implanter
variable aperture
energy ion
aperture
Prior art date
Application number
SG200000743A
Other languages
English (en)
Inventor
Kirby Mcintyre Edward
Edward Deluca Donald
Leo Dionne Gerald
Ashby Loomis Paul
Jurg Rutishauser Hans
N Polner Donald
Lu Jun
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Publication of SG82676A1 publication Critical patent/SG82676A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)
  • Electron Sources, Ion Sources (AREA)
SG200000743A 1999-02-19 2000-02-09 Continuously variable aperture for high-energy ion implanter SG82676A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/253,375 US6207964B1 (en) 1999-02-19 1999-02-19 Continuously variable aperture for high-energy ion implanter

Publications (1)

Publication Number Publication Date
SG82676A1 true SG82676A1 (en) 2001-08-21

Family

ID=22960006

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200000743A SG82676A1 (en) 1999-02-19 2000-02-09 Continuously variable aperture for high-energy ion implanter

Country Status (7)

Country Link
US (1) US6207964B1 (de)
EP (1) EP1030344B1 (de)
JP (1) JP4915490B2 (de)
KR (1) KR100485534B1 (de)
DE (1) DE60016481T2 (de)
SG (1) SG82676A1 (de)
TW (1) TW590318U (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6507033B1 (en) * 1999-03-29 2003-01-14 The Regents Of The University Of California Versatile, high-sensitivity faraday cup array for ion implanters
US6501078B1 (en) * 2000-03-16 2002-12-31 Applied Materials, Inc. Ion extraction assembly
US6320334B1 (en) * 2000-03-27 2001-11-20 Applied Materials, Inc. Controller for a linear accelerator
US6885014B2 (en) * 2002-05-01 2005-04-26 Axcelis Technologies, Inc. Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam
US6703628B2 (en) 2000-07-25 2004-03-09 Axceliss Technologies, Inc Method and system for ion beam containment in an ion beam guide
US6664548B2 (en) 2002-05-01 2003-12-16 Axcelis Technologies, Inc. Ion source and coaxial inductive coupler for ion implantation system
US6664547B2 (en) 2002-05-01 2003-12-16 Axcelis Technologies, Inc. Ion source providing ribbon beam with controllable density profile
US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
US6891174B2 (en) * 2003-07-31 2005-05-10 Axcelis Technologies, Inc. Method and system for ion beam containment using photoelectrons in an ion beam guide
US20050061997A1 (en) * 2003-09-24 2005-03-24 Benveniste Victor M. Ion beam slit extraction with mass separation
TWI404106B (zh) * 2005-06-03 2013-08-01 Axcelis Tech Inc 離子植入系統、用於減少離子植入系統中的污染之裝置以及用於控制離子植入系統中的污染之方法
US7674687B2 (en) * 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
WO2007118121A2 (en) 2006-04-05 2007-10-18 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
US20080128641A1 (en) * 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
US20090206275A1 (en) * 2007-10-03 2009-08-20 Silcon Genesis Corporation Accelerator particle beam apparatus and method for low contaminate processing
US20110049383A1 (en) * 2009-09-03 2011-03-03 Advanced Ion Beam Technology, Inc. Ion implanter and ion implant method thereof
US8987691B2 (en) 2009-09-03 2015-03-24 Advanced Ion Beam Technology, Inc. Ion implanter and ion implant method thereof
US8198610B2 (en) * 2009-10-20 2012-06-12 Advanced Ion Beam Technology, Inc. Ion implanter with variable aperture and ion implant method thereof
US8669539B2 (en) * 2010-03-29 2014-03-11 Advanced Ion Beam Technology, Inc. Implant method and implanter by using a variable aperture
US8309444B2 (en) 2010-07-07 2012-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. System and method of dosage profile control
JP6253362B2 (ja) * 2013-11-21 2017-12-27 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム電流調整装置、及びビーム電流調整方法
US9953801B1 (en) 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion
CN107195518A (zh) * 2017-06-22 2017-09-22 京东方科技集团股份有限公司 离子注入量调节装置及方法、离子注入设备、判断方法
CN110164582A (zh) * 2019-05-31 2019-08-23 钱铁威 一种可对快中子束径调整的中子准直装置
CN112758696B (zh) * 2021-01-19 2023-07-11 埃特曼半导体技术有限公司 真空样品驱动装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
US4804879A (en) * 1986-05-21 1989-02-14 Mitsubishi Denki Kabushiki Kaisha Deflecting electromagnet apparatus with moveable pole piece
US5063294A (en) * 1989-05-17 1991-11-05 Kabushiki Kaisha Kobe Seiko Sho Converged ion beam apparatus
US5130552A (en) * 1990-12-17 1992-07-14 Applied Materials, Inc. Improved ion implantation using a variable mass resolving system
US5206253A (en) * 1989-05-26 1993-04-27 Boehringer Mannheim, Gmbh Disphosphonic acid derivatives, processes for their production and pharmaceutical preparations containing these compounds

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1518282A (en) * 1974-07-31 1978-07-19 Atomic Energy Authority Uk Ion beam separators
JPH02295040A (ja) * 1989-05-10 1990-12-05 Hitachi Ltd 集束イオンビーム装置
JP3034009B2 (ja) * 1990-10-22 2000-04-17 株式会社日立製作所 イオン打込み装置
GB9515090D0 (en) * 1995-07-21 1995-09-20 Applied Materials Inc An ion beam apparatus
US5780863A (en) * 1997-04-29 1998-07-14 Eaton Corporation Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter
US5998798A (en) * 1998-06-11 1999-12-07 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
US4804879A (en) * 1986-05-21 1989-02-14 Mitsubishi Denki Kabushiki Kaisha Deflecting electromagnet apparatus with moveable pole piece
US5063294A (en) * 1989-05-17 1991-11-05 Kabushiki Kaisha Kobe Seiko Sho Converged ion beam apparatus
US5206253A (en) * 1989-05-26 1993-04-27 Boehringer Mannheim, Gmbh Disphosphonic acid derivatives, processes for their production and pharmaceutical preparations containing these compounds
US5130552A (en) * 1990-12-17 1992-07-14 Applied Materials, Inc. Improved ion implantation using a variable mass resolving system

Also Published As

Publication number Publication date
EP1030344B1 (de) 2004-12-08
EP1030344A2 (de) 2000-08-23
KR100485534B1 (ko) 2005-04-27
JP4915490B2 (ja) 2012-04-11
EP1030344A3 (de) 2001-05-02
KR20000058112A (ko) 2000-09-25
DE60016481D1 (de) 2005-01-13
DE60016481T2 (de) 2005-12-15
TW590318U (en) 2004-06-01
US6207964B1 (en) 2001-03-27
JP2000243342A (ja) 2000-09-08

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