SG79297A1 - Ion implantation control using charge collection, optical emission spectroscopy and mass analysis - Google Patents

Ion implantation control using charge collection, optical emission spectroscopy and mass analysis

Info

Publication number
SG79297A1
SG79297A1 SG9906368A SG1999006368A SG79297A1 SG 79297 A1 SG79297 A1 SG 79297A1 SG 9906368 A SG9906368 A SG 9906368A SG 1999006368 A SG1999006368 A SG 1999006368A SG 79297 A1 SG79297 A1 SG 79297A1
Authority
SG
Singapore
Prior art keywords
ion implantation
mass analysis
optical emission
emission spectroscopy
charge collection
Prior art date
Application number
SG9906368A
Other languages
English (en)
Inventor
Stuart Denholm Alec
Chen Jiong
Anthony Graf Michael
Lawrence Kellerman Peter
Stejic George
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Publication of SG79297A1 publication Critical patent/SG79297A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
SG9906368A 1998-12-22 1999-12-14 Ion implantation control using charge collection, optical emission spectroscopy and mass analysis SG79297A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/218,770 US6101971A (en) 1998-05-13 1998-12-22 Ion implantation control using charge collection, optical emission spectroscopy and mass analysis

Publications (1)

Publication Number Publication Date
SG79297A1 true SG79297A1 (en) 2001-03-20

Family

ID=22816441

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9906368A SG79297A1 (en) 1998-12-22 1999-12-14 Ion implantation control using charge collection, optical emission spectroscopy and mass analysis

Country Status (6)

Country Link
US (1) US6101971A (ko)
EP (1) EP1014422A1 (ko)
JP (1) JP4470127B2 (ko)
KR (1) KR100517300B1 (ko)
SG (1) SG79297A1 (ko)
TW (1) TW436851B (ko)

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EP0942453A3 (en) * 1998-03-11 2001-02-07 Axcelis Technologies, Inc. Monitoring of plasma constituents using optical emission spectroscopy
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US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
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US7183177B2 (en) * 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
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US10553411B2 (en) 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
CN108538743A (zh) * 2017-03-01 2018-09-14 北京北方华创微电子装备有限公司 半导体加工设备
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Also Published As

Publication number Publication date
KR100517300B1 (ko) 2005-09-27
US6101971A (en) 2000-08-15
KR20000048289A (ko) 2000-07-25
EP1014422A1 (en) 2000-06-28
JP2000195462A (ja) 2000-07-14
JP4470127B2 (ja) 2010-06-02
TW436851B (en) 2001-05-28

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