SG72884A1 - Method for forming noble metal oxides and structures formed thereof - Google Patents

Method for forming noble metal oxides and structures formed thereof

Info

Publication number
SG72884A1
SG72884A1 SG1998004543A SG1998004543A SG72884A1 SG 72884 A1 SG72884 A1 SG 72884A1 SG 1998004543 A SG1998004543 A SG 1998004543A SG 1998004543 A SG1998004543 A SG 1998004543A SG 72884 A1 SG72884 A1 SG 72884A1
Authority
SG
Singapore
Prior art keywords
noble metal
metal oxides
structures formed
forming noble
forming
Prior art date
Application number
SG1998004543A
Inventor
Peter Richard Duncombe
John Patrick Hummel
Robert Benjamin Laibowitz
Deborah Ann Neumayer
Katherine Lynn Saenger
Alejandro Gabriel Schrott
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG72884A1 publication Critical patent/SG72884A1/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/12Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141Plasma treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/14Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to metal, e.g. car bodies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2202/00Metallic substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
SG1998004543A 1997-11-05 1998-11-05 Method for forming noble metal oxides and structures formed thereof SG72884A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96460797A 1997-11-05 1997-11-05

Publications (1)

Publication Number Publication Date
SG72884A1 true SG72884A1 (en) 2000-05-23

Family

ID=25508764

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998004543A SG72884A1 (en) 1997-11-05 1998-11-05 Method for forming noble metal oxides and structures formed thereof

Country Status (4)

Country Link
JP (1) JPH11224936A (en)
KR (1) KR100303935B1 (en)
SG (1) SG72884A1 (en)
TW (2) TW483156B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100600283B1 (en) * 1999-12-14 2006-07-13 주식회사 하이닉스반도체 Alloy electrodes of capacitor and method for forming the same
KR100687433B1 (en) * 2000-07-29 2007-02-26 주식회사 하이닉스반도체 Method for forming a bottom electrode of a capacitor
KR20030025671A (en) * 2001-09-22 2003-03-29 주식회사 하이닉스반도체 Method for fabricating capacitor
KR100735396B1 (en) * 2005-10-19 2007-07-04 삼성전기주식회사 thin flim capacitor and printed circuit board embedded capacitor and method for manufacturing the same
JP2007242847A (en) * 2006-03-08 2007-09-20 Seiko Epson Corp Capacitor, and manufacturing method thereof
KR100878414B1 (en) * 2006-10-27 2009-01-13 삼성전기주식회사 Capacitor embedded printed circuit borad and manufacturing method of the same
JP2014212310A (en) * 2013-04-02 2014-11-13 東京エレクトロン株式会社 Manufacturing method and manufacturing apparatus of semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02101649A (en) * 1988-10-07 1990-04-13 Victor Co Of Japan Ltd Optical disk
JP3239445B2 (en) * 1992-06-09 2001-12-17 セイコーエプソン株式会社 Dielectric element, method of manufacturing the same, and semiconductor memory device
US5585300A (en) * 1994-08-01 1996-12-17 Texas Instruments Incorporated Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
WO1996010845A2 (en) * 1994-10-04 1996-04-11 Philips Electronics N.V. Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier
JPH08153707A (en) * 1994-11-29 1996-06-11 Nec Corp Manufacturing method for semiconductor device
JP3188179B2 (en) * 1995-09-26 2001-07-16 シャープ株式会社 Method of manufacturing ferroelectric thin film element and method of manufacturing ferroelectric memory element

Also Published As

Publication number Publication date
KR100303935B1 (en) 2002-04-17
JPH11224936A (en) 1999-08-17
TW483156B (en) 2002-04-11
KR19990044856A (en) 1999-06-25
TW442959B (en) 2001-06-23

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