SG68017A1 - Device and method for pulling a single crystal - Google Patents
Device and method for pulling a single crystalInfo
- Publication number
- SG68017A1 SG68017A1 SG1998000298A SG1998000298A SG68017A1 SG 68017 A1 SG68017 A1 SG 68017A1 SG 1998000298 A SG1998000298 A SG 1998000298A SG 1998000298 A SG1998000298 A SG 1998000298A SG 68017 A1 SG68017 A1 SG 68017A1
- Authority
- SG
- Singapore
- Prior art keywords
- pulling
- single crystal
- crystal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19711922A DE19711922A1 (de) | 1997-03-21 | 1997-03-21 | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
Publications (1)
Publication Number | Publication Date |
---|---|
SG68017A1 true SG68017A1 (en) | 1999-10-19 |
Family
ID=7824197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1998000298A SG68017A1 (en) | 1997-03-21 | 1998-02-11 | Device and method for pulling a single crystal |
Country Status (8)
Country | Link |
---|---|
US (1) | US6153008A (fr) |
EP (1) | EP0866150B1 (fr) |
JP (2) | JP3026254B2 (fr) |
KR (1) | KR100268712B1 (fr) |
CN (1) | CN1109135C (fr) |
DE (2) | DE19711922A1 (fr) |
SG (1) | SG68017A1 (fr) |
TW (1) | TW415978B (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6379642B1 (en) * | 1997-04-09 | 2002-04-30 | Memc Electronic Materials, Inc. | Vacancy dominated, defect-free silicon |
MY135749A (en) | 1997-04-09 | 2008-06-30 | Memc Electronic Materials | Process for producing low defect density, ideal oxygen precipitating silicon |
CN100595351C (zh) | 1997-04-09 | 2010-03-24 | Memc电子材料有限公司 | 低缺陷密度、自间隙原子为主的硅 |
JPH1179889A (ja) * | 1997-07-09 | 1999-03-23 | Shin Etsu Handotai Co Ltd | 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ |
DE19756613A1 (de) | 1997-12-18 | 1999-07-01 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
JP3943717B2 (ja) | 1998-06-11 | 2007-07-11 | 信越半導体株式会社 | シリコン単結晶ウエーハ及びその製造方法 |
US6328795B2 (en) | 1998-06-26 | 2001-12-11 | Memc Electronic Materials, Inc. | Process for growth of defect free silicon crystals of arbitrarily large diameters |
KR100622884B1 (ko) * | 1998-10-14 | 2006-09-12 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 열적으로 어닐링된 저결함 밀도 단결정 실리콘 |
DE69913731T2 (de) | 1998-10-14 | 2004-10-14 | Memc Electronic Materials, Inc. | Im wesentlichen defektfreie epitaktische siliziumscheiben |
US6312516B2 (en) | 1998-10-14 | 2001-11-06 | Memc Electronic Materials, Inc. | Process for preparing defect free silicon crystals which allows for variability in process conditions |
DE19847695A1 (de) * | 1998-10-15 | 2000-04-20 | Wacker Siltronic Halbleitermat | Verfahren zum Ziehen eines Einkristalls |
JP2000154070A (ja) * | 1998-11-16 | 2000-06-06 | Suminoe Textile Co Ltd | セラミックス三次元構造体及びその製造方法 |
TW505710B (en) * | 1998-11-20 | 2002-10-11 | Komatsu Denshi Kinzoku Kk | Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer |
DE19943101C2 (de) * | 1999-09-09 | 2002-06-20 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer gebondeten Halbleiterscheibe |
WO2001021861A1 (fr) * | 1999-09-23 | 2001-03-29 | Memc Electronic Materials, Inc. | Procede czochralski permettant de produire du silicium monocristallin par regulation de la vitesse de refroidissement |
US6635587B1 (en) | 1999-09-23 | 2003-10-21 | Memc Electronic Materials, Inc. | Method for producing czochralski silicon free of agglomerated self-interstitial defects |
US7105050B2 (en) * | 2000-11-03 | 2006-09-12 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
US6858307B2 (en) | 2000-11-03 | 2005-02-22 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
WO2002059400A2 (fr) * | 2001-01-26 | 2002-08-01 | Memc Electronic Materials, Inc. | Silicium a faible densite de defauts dont la partie centrale dominee par des lacunes est pratiquement exempte de defauts d'empilement induits par l'oxydation |
US7077905B2 (en) * | 2002-09-13 | 2006-07-18 | Toshiba Ceramics Co., Ltd. | Apparatus for pulling a single crystal |
DE60323663D1 (de) * | 2002-11-12 | 2008-10-30 | Memc Electronic Materials | Kristallziehvorrichtung und verfahren zur züchtung einer einkristallstange |
DE10259588B4 (de) | 2002-12-19 | 2008-06-19 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
DE10326578B4 (de) | 2003-06-12 | 2006-01-19 | Siltronic Ag | Verfahren zur Herstellung einer SOI-Scheibe |
US8216362B2 (en) | 2006-05-19 | 2012-07-10 | Memc Electronic Materials, Inc. | Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth |
DE102006060359B4 (de) * | 2006-12-20 | 2013-09-05 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium |
KR100869218B1 (ko) * | 2006-12-28 | 2008-11-18 | 주식회사 실트론 | 열실드 거리결정 방법 및 이를 이용한 실리콘 단결정잉곳의 제조장치 |
US8795718B2 (en) | 2008-05-22 | 2014-08-05 | Honeywell International, Inc. | Functional nano-layered hemostatic material/device |
DE102009056638B4 (de) | 2009-12-02 | 2013-08-01 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser |
DE102012213715A1 (de) | 2012-08-02 | 2014-02-06 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone |
CN104630880A (zh) * | 2015-02-15 | 2015-05-20 | 英利集团有限公司 | 形成单晶棒的直拉系统与生长单晶棒的工艺方法 |
CN105239154A (zh) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | 提拉法单晶硅生长流场控制技术 |
CN106048723A (zh) * | 2016-08-01 | 2016-10-26 | 中国电子科技集团公司第四十六研究所 | 一种采用提拉法生长氧化镓晶体的固液界面控制方法 |
CN106435729A (zh) * | 2016-10-09 | 2017-02-22 | 英利能源(中国)有限公司 | 一种单晶棒引晶和放肩装置、单晶炉及其工艺方法 |
CN109930197A (zh) * | 2017-12-18 | 2019-06-25 | 上海新昇半导体科技有限公司 | 热屏及单晶硅生长炉结构 |
CN111321458A (zh) * | 2018-12-13 | 2020-06-23 | 上海新昇半导体科技有限公司 | 加热式导流筒 |
CN109695055A (zh) * | 2019-03-11 | 2019-04-30 | 苏州新美光纳米科技有限公司 | 长晶炉及结晶系统 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1316707A (fr) * | 1961-12-22 | 1963-02-01 | Radiotechnique | Perfectionnements aux dispositifs d'obtention de monocristaux par tirage |
JPS62105998A (ja) * | 1985-10-31 | 1987-05-16 | Sony Corp | シリコン基板の製法 |
US4981549A (en) * | 1988-02-23 | 1991-01-01 | Mitsubishi Kinzoku Kabushiki Kaisha | Method and apparatus for growing silicon crystals |
JPH0416589A (ja) * | 1990-05-11 | 1992-01-21 | Ishikawajima Harima Heavy Ind Co Ltd | 単結晶製造装置 |
JP2509477B2 (ja) * | 1991-04-20 | 1996-06-19 | コマツ電子金属株式会社 | 結晶成長方法及び結晶成長装置 |
US5441014A (en) * | 1991-06-24 | 1995-08-15 | Komatsu Electronic Metals Co., Ltd. | Apparatus for pulling up a single crystal |
DE4414947C2 (de) * | 1993-12-16 | 1998-12-17 | Wacker Siltronic Halbleitermat | Verfahren zum Ziehen eines Einkristalls aus Silicium |
IT1280041B1 (it) * | 1993-12-16 | 1997-12-29 | Wacker Chemitronic | Procedimento per il tiraggio di un monocristallo di silicio |
DE19503357A1 (de) * | 1995-02-02 | 1996-08-08 | Wacker Siltronic Halbleitermat | Vorrichtung zur Herstellung eines Einkristalls |
-
1997
- 1997-03-21 DE DE19711922A patent/DE19711922A1/de not_active Withdrawn
-
1998
- 1998-02-11 SG SG1998000298A patent/SG68017A1/en unknown
- 1998-02-20 JP JP10039202A patent/JP3026254B2/ja not_active Expired - Lifetime
- 1998-03-11 KR KR1019980008103A patent/KR100268712B1/ko not_active IP Right Cessation
- 1998-03-16 CN CN98101022A patent/CN1109135C/zh not_active Expired - Lifetime
- 1998-03-18 TW TW087104060A patent/TW415978B/zh not_active IP Right Cessation
- 1998-03-19 EP EP98104987A patent/EP0866150B1/fr not_active Expired - Lifetime
- 1998-03-19 DE DE59800828T patent/DE59800828D1/de not_active Expired - Lifetime
- 1998-03-20 US US09/045,348 patent/US6153008A/en not_active Expired - Lifetime
-
1999
- 1999-11-05 JP JP31530799A patent/JP3532477B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19711922A1 (de) | 1998-09-24 |
CN1197128A (zh) | 1998-10-28 |
JPH10265294A (ja) | 1998-10-06 |
JP2000233991A (ja) | 2000-08-29 |
CN1109135C (zh) | 2003-05-21 |
EP0866150B1 (fr) | 2001-06-13 |
DE59800828D1 (de) | 2001-07-19 |
US6153008A (en) | 2000-11-28 |
EP0866150A1 (fr) | 1998-09-23 |
KR19980080133A (ko) | 1998-11-25 |
TW415978B (en) | 2000-12-21 |
JP3532477B2 (ja) | 2004-05-31 |
KR100268712B1 (ko) | 2000-10-16 |
JP3026254B2 (ja) | 2000-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG68017A1 (en) | Device and method for pulling a single crystal | |
GB2314448B (en) | Device for moving and detaching a panel | |
GB2330889B (en) | Method and device for controlling a clutch | |
GB2284869B (en) | Method and device for controlling a coupling | |
IL126505A0 (en) | A method and device for hair removal | |
GB2329259B (en) | An optical device and a method for producing it | |
EP0817600A4 (fr) | Dispositif de maintien et procede associe | |
EP0940484A4 (fr) | Appareil permettant de tirer un monocristal | |
HUP0000401A3 (en) | Method and device for framing a decorative element | |
LT97089A (en) | A method and a device for telecommunication | |
SG52986A1 (en) | Method and device for producing monocrystals | |
HUP0002878A3 (en) | Method and device for producing a distributed wave winding | |
AU8291898A (en) | Apparatus and methods for fastening a hairpiece | |
GB9904327D0 (en) | Method and device for controlling a clutch | |
EP1029955A4 (fr) | Dispositif et procede servant a obtenir un monocristal | |
GB2369869B (en) | Method and device for controlling a clutch | |
EP1061161A4 (fr) | Procede de production de monocristal et dispositif de tirage | |
IL137073A0 (en) | A method and a device for matching images | |
HK1023495A1 (en) | Method and device for adapting a bridge structure | |
EP1042745A4 (fr) | Dispositif luminescent et procede associe | |
AU9091498A (en) | A time display device and method | |
AU9487298A (en) | Method and apparatus for illuminating a display device | |
GB9704736D0 (en) | Device and method | |
AU5580398A (en) | A diagnostic method and a device for its implementation | |
GB2330506B (en) | Method and device for a screen of a communication unit |