SG63801A1 - Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish - Google Patents
Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finishInfo
- Publication number
- SG63801A1 SG63801A1 SG1998000104A SG1998000104A SG63801A1 SG 63801 A1 SG63801 A1 SG 63801A1 SG 1998000104 A SG1998000104 A SG 1998000104A SG 1998000104 A SG1998000104 A SG 1998000104A SG 63801 A1 SG63801 A1 SG 63801A1
- Authority
- SG
- Singapore
- Prior art keywords
- finish
- coated
- manufacturing
- semiconductor wafer
- wafer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19704546A DE19704546A1 (de) | 1997-02-06 | 1997-02-06 | Verfahren zur Herstellung einer einseitig beschichteten und mit einem Finish versehenen Halbleiterscheibe |
Publications (1)
Publication Number | Publication Date |
---|---|
SG63801A1 true SG63801A1 (en) | 1999-03-30 |
Family
ID=7819522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1998000104A SG63801A1 (en) | 1997-02-06 | 1998-01-14 | Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish |
Country Status (8)
Country | Link |
---|---|
US (1) | US6051498A (ko) |
EP (1) | EP0857542B1 (ko) |
JP (1) | JPH10223580A (ko) |
KR (1) | KR100275283B1 (ko) |
DE (2) | DE19704546A1 (ko) |
MY (1) | MY129597A (ko) |
SG (1) | SG63801A1 (ko) |
TW (1) | TW399257B (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19917064A1 (de) * | 1999-04-15 | 2000-08-24 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Schichtstruktur |
WO2001054178A1 (en) * | 2000-01-20 | 2001-07-26 | Memc Electronic Materials, Inc. | Semiconductor wafer manufacturing process |
US6376335B1 (en) | 2000-02-17 | 2002-04-23 | Memc Electronic Materials, Inc. | Semiconductor wafer manufacturing process |
CN1203530C (zh) * | 2000-04-24 | 2005-05-25 | 三菱住友硅晶株式会社 | 半导体晶片的制造方法 |
US6709981B2 (en) * | 2000-08-16 | 2004-03-23 | Memc Electronic Materials, Inc. | Method and apparatus for processing a semiconductor wafer using novel final polishing method |
DE10132504C1 (de) | 2001-07-05 | 2002-10-10 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung |
DE10142400B4 (de) * | 2001-08-30 | 2009-09-03 | Siltronic Ag | Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung |
US6576501B1 (en) | 2002-05-31 | 2003-06-10 | Seh America, Inc. | Double side polished wafers having external gettering sites, and method of producing same |
DE102006044367B4 (de) * | 2006-09-20 | 2011-07-14 | Siltronic AG, 81737 | Verfahren zum Polieren einer Halbleiterscheibe und eine nach dem Verfahren herstellbare polierte Halbleiterscheibe |
MY154627A (en) | 2009-04-13 | 2015-07-15 | Sumco Corp | Method for producing silicon epitaxial wafer |
JP5381304B2 (ja) | 2009-05-08 | 2014-01-08 | 株式会社Sumco | シリコンエピタキシャルウェーハの製造方法 |
US8952496B2 (en) * | 2009-12-24 | 2015-02-10 | Sumco Corporation | Semiconductor wafer and method of producing same |
JP5423384B2 (ja) | 2009-12-24 | 2014-02-19 | 株式会社Sumco | 半導体ウェーハおよびその製造方法 |
DE102010042040A1 (de) | 2010-10-06 | 2012-04-12 | Siltronic Ag | Verfahren zum Schleifen einer Halbleiterscheibe |
CN103847032B (zh) * | 2014-03-20 | 2016-01-06 | 德清晶辉光电科技有限公司 | 一种大直径超薄石英晶片的生产工艺 |
CN105034182B (zh) * | 2015-07-13 | 2017-02-01 | 苏州爱彼光电材料有限公司 | 超薄型蓝宝石片状体的加工方法 |
DE102018200415A1 (de) | 2018-01-11 | 2019-07-11 | Siltronic Ag | Halbleiterscheibe mit epitaktischer Schicht |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4144099A (en) * | 1977-10-31 | 1979-03-13 | International Business Machines Corporation | High performance silicon wafer and fabrication process |
JPS6173345A (ja) * | 1984-09-19 | 1986-04-15 | Toshiba Corp | 半導体装置 |
NL8501773A (nl) * | 1985-06-20 | 1987-01-16 | Philips Nv | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen. |
JPH0592363A (ja) * | 1991-02-20 | 1993-04-16 | Hitachi Ltd | 基板の両面同時研磨加工方法と加工装置及びそれを用いた磁気デイスク基板の研磨加工方法と磁気デイスクの製造方法並びに磁気デイスク |
US5424224A (en) * | 1993-01-19 | 1995-06-13 | Texas Instruments Incorporated | Method of surface protection of a semiconductor wafer during polishing |
KR960700863A (ko) * | 1993-02-12 | 1996-02-24 | 블라디미르 스테파노비치 콘트라텐코 | 취성 재료 부품 가공 공정 및 그 장치(Process for Machining Components Made of Brittle Materials and a Device for Carrying out the Same) |
US5360509A (en) * | 1993-03-08 | 1994-11-01 | Gi Corporation | Low cost method of fabricating epitaxial semiconductor devices |
US5389579A (en) * | 1993-04-05 | 1995-02-14 | Motorola, Inc. | Method for single sided polishing of a semiconductor wafer |
JPH07201976A (ja) * | 1993-12-28 | 1995-08-04 | Nippon Steel Corp | 半導体装置の製造方法 |
KR100227924B1 (ko) * | 1995-07-28 | 1999-11-01 | 가이데 히사오 | 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치 |
US5643405A (en) * | 1995-07-31 | 1997-07-01 | Motorola, Inc. | Method for polishing a semiconductor substrate |
-
1997
- 1997-02-06 DE DE19704546A patent/DE19704546A1/de not_active Withdrawn
- 1997-12-15 JP JP9345127A patent/JPH10223580A/ja active Pending
- 1997-12-18 MY MYPI97006157A patent/MY129597A/en unknown
-
1998
- 1998-01-06 US US09/003,490 patent/US6051498A/en not_active Expired - Fee Related
- 1998-01-14 SG SG1998000104A patent/SG63801A1/en unknown
- 1998-02-02 TW TW087101214A patent/TW399257B/zh not_active IP Right Cessation
- 1998-02-04 KR KR1019980003140A patent/KR100275283B1/ko not_active IP Right Cessation
- 1998-02-05 DE DE59802382T patent/DE59802382D1/de not_active Expired - Fee Related
- 1998-02-05 EP EP98101959A patent/EP0857542B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0857542A1 (de) | 1998-08-12 |
DE19704546A1 (de) | 1998-08-13 |
MY129597A (en) | 2007-04-30 |
JPH10223580A (ja) | 1998-08-21 |
DE59802382D1 (de) | 2002-01-24 |
KR19980071077A (ko) | 1998-10-26 |
EP0857542B1 (de) | 2001-12-12 |
KR100275283B1 (ko) | 2000-12-15 |
TW399257B (en) | 2000-07-21 |
US6051498A (en) | 2000-04-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG63801A1 (en) | Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish | |
EP0676796A3 (en) | Semiconductor substrate and manufacturing process. | |
SG49343A1 (en) | Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate | |
SG60012A1 (en) | Semiconductor substrate and fabrication method for the same | |
SG68658A1 (en) | Semiconductor substrate and method of manufacturing the same | |
HK1010657A1 (en) | Molded surface fastener and method for manufacturing the same | |
SG77227A1 (en) | Semiconductor device its manufacturing method and substrate for manufacturing a semiconductor device | |
SG50524A1 (en) | Semiconductor device having anti-reflective coating and method for making the same | |
SG60095A1 (en) | Carrier for a semiconductor wafer and use of the carrier | |
GB2328080B (en) | Improved method for rinsing and drying a wafer | |
AU4726397A (en) | Semiconductor device and method for manufacturing the same | |
EP1014453A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF | |
GB9924488D0 (en) | Semiconductor device having a plurality of mosfets on substrate and method of manufacturing the same | |
EP0738004A4 (en) | METHOD AND DEVICE FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE | |
EP1034082A4 (en) | METHOD FOR MINIMIZING THE CRITICAL GROWTH GROWTH FROM STRUCTURES TO SEMICONDUCTOR LETTERS | |
EP0741410A3 (en) | Semiconductor device and method for its manufacture | |
GB2331594B (en) | A method of manufacturing a semiconductor device | |
EP0755070A3 (en) | Semiconductor device and manufacturing method | |
AU1183999A (en) | Semiconductor component and manufacturing method for semiconductor component | |
GB2306778B (en) | Semiconductor device and a method of manufacturing the same | |
GB2309121B (en) | Semiconductor diode and fabrication method for semiconductor diode | |
GB2326024B (en) | Method for manufacturing a semiconductor device | |
AU4032197A (en) | Semiconductor device and method for manufacturing the same | |
AU7715296A (en) | Method in the manufacturing of a semiconductor device | |
GB2331845B (en) | Semiconductor device and manufacturing method for same |