SG63801A1 - Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish - Google Patents

Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish

Info

Publication number
SG63801A1
SG63801A1 SG1998000104A SG1998000104A SG63801A1 SG 63801 A1 SG63801 A1 SG 63801A1 SG 1998000104 A SG1998000104 A SG 1998000104A SG 1998000104 A SG1998000104 A SG 1998000104A SG 63801 A1 SG63801 A1 SG 63801A1
Authority
SG
Singapore
Prior art keywords
finish
coated
manufacturing
semiconductor wafer
wafer
Prior art date
Application number
SG1998000104A
Other languages
English (en)
Inventor
Georg Pietsch
Bernd Sauter
Ernst Feuchtinger
Original Assignee
Wacker Siltronic Halbleitermat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic Halbleitermat filed Critical Wacker Siltronic Halbleitermat
Publication of SG63801A1 publication Critical patent/SG63801A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG1998000104A 1997-02-06 1998-01-14 Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish SG63801A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19704546A DE19704546A1 (de) 1997-02-06 1997-02-06 Verfahren zur Herstellung einer einseitig beschichteten und mit einem Finish versehenen Halbleiterscheibe

Publications (1)

Publication Number Publication Date
SG63801A1 true SG63801A1 (en) 1999-03-30

Family

ID=7819522

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998000104A SG63801A1 (en) 1997-02-06 1998-01-14 Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish

Country Status (8)

Country Link
US (1) US6051498A (ko)
EP (1) EP0857542B1 (ko)
JP (1) JPH10223580A (ko)
KR (1) KR100275283B1 (ko)
DE (2) DE19704546A1 (ko)
MY (1) MY129597A (ko)
SG (1) SG63801A1 (ko)
TW (1) TW399257B (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19917064A1 (de) * 1999-04-15 2000-08-24 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Schichtstruktur
WO2001054178A1 (en) * 2000-01-20 2001-07-26 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process
US6376335B1 (en) 2000-02-17 2002-04-23 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process
CN1203530C (zh) * 2000-04-24 2005-05-25 三菱住友硅晶株式会社 半导体晶片的制造方法
US6709981B2 (en) * 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
DE10132504C1 (de) 2001-07-05 2002-10-10 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
US6576501B1 (en) 2002-05-31 2003-06-10 Seh America, Inc. Double side polished wafers having external gettering sites, and method of producing same
DE102006044367B4 (de) * 2006-09-20 2011-07-14 Siltronic AG, 81737 Verfahren zum Polieren einer Halbleiterscheibe und eine nach dem Verfahren herstellbare polierte Halbleiterscheibe
MY154627A (en) 2009-04-13 2015-07-15 Sumco Corp Method for producing silicon epitaxial wafer
JP5381304B2 (ja) 2009-05-08 2014-01-08 株式会社Ｓｕｍｃｏ シリコンエピタキシャルウェーハの製造方法
US8952496B2 (en) * 2009-12-24 2015-02-10 Sumco Corporation Semiconductor wafer and method of producing same
JP5423384B2 (ja) 2009-12-24 2014-02-19 株式会社Ｓｕｍｃｏ 半導体ウェーハおよびその製造方法
DE102010042040A1 (de) 2010-10-06 2012-04-12 Siltronic Ag Verfahren zum Schleifen einer Halbleiterscheibe
CN103847032B (zh) * 2014-03-20 2016-01-06 德清晶辉光电科技有限公司 一种大直径超薄石英晶片的生产工艺
CN105034182B (zh) * 2015-07-13 2017-02-01 苏州爱彼光电材料有限公司 超薄型蓝宝石片状体的加工方法
DE102018200415A1 (de) 2018-01-11 2019-07-11 Siltronic Ag Halbleiterscheibe mit epitaktischer Schicht

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144099A (en) * 1977-10-31 1979-03-13 International Business Machines Corporation High performance silicon wafer and fabrication process
JPS6173345A (ja) * 1984-09-19 1986-04-15 Toshiba Corp 半導体装置
NL8501773A (nl) * 1985-06-20 1987-01-16 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen.
JPH0592363A (ja) * 1991-02-20 1993-04-16 Hitachi Ltd 基板の両面同時研磨加工方法と加工装置及びそれを用いた磁気デイスク基板の研磨加工方法と磁気デイスクの製造方法並びに磁気デイスク
US5424224A (en) * 1993-01-19 1995-06-13 Texas Instruments Incorporated Method of surface protection of a semiconductor wafer during polishing
KR960700863A (ko) * 1993-02-12 1996-02-24 블라디미르 스테파노비치 콘트라텐코 취성 재료 부품 가공 공정 및 그 장치(Process for Machining Components Made of Brittle Materials and a Device for Carrying out the Same)
US5360509A (en) * 1993-03-08 1994-11-01 Gi Corporation Low cost method of fabricating epitaxial semiconductor devices
US5389579A (en) * 1993-04-05 1995-02-14 Motorola, Inc. Method for single sided polishing of a semiconductor wafer
JPH07201976A (ja) * 1993-12-28 1995-08-04 Nippon Steel Corp 半導体装置の製造方法
KR100227924B1 (ko) * 1995-07-28 1999-11-01 가이데 히사오 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치
US5643405A (en) * 1995-07-31 1997-07-01 Motorola, Inc. Method for polishing a semiconductor substrate

Also Published As

Publication number Publication date
EP0857542A1 (de) 1998-08-12
DE19704546A1 (de) 1998-08-13
MY129597A (en) 2007-04-30
JPH10223580A (ja) 1998-08-21
DE59802382D1 (de) 2002-01-24
KR19980071077A (ko) 1998-10-26
EP0857542B1 (de) 2001-12-12
KR100275283B1 (ko) 2000-12-15
TW399257B (en) 2000-07-21
US6051498A (en) 2000-04-18

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