SG53191G - Film for machining wafers - Google Patents

Film for machining wafers

Info

Publication number
SG53191G
SG53191G SG53191A SG53191A SG53191G SG 53191 G SG53191 G SG 53191G SG 53191 A SG53191 A SG 53191A SG 53191 A SG53191 A SG 53191A SG 53191 G SG53191 G SG 53191G
Authority
SG
Singapore
Prior art keywords
pct
wafers
film
sec
grinding
Prior art date
Application number
SG53191A
Other languages
English (en)
Original Assignee
Mitsui Toatsu Chemicals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26447564&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG53191(G) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP59107539A external-priority patent/JPH0618190B2/ja
Priority claimed from JP59164328A external-priority patent/JPS6143677A/ja
Application filed by Mitsui Toatsu Chemicals filed Critical Mitsui Toatsu Chemicals
Publication of SG53191G publication Critical patent/SG53191G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/14—Layer or component removable to expose adhesive
    • Y10T428/1452—Polymer derived only from ethylenically unsaturated monomer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/14—Layer or component removable to expose adhesive
    • Y10T428/1462—Polymer derived from material having at least one acrylic or alkacrylic group or the nitrile or amide derivative thereof [e.g., acrylamide, acrylate ester, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
SG53191A 1984-05-29 1991-07-09 Film for machining wafers SG53191G (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59107539A JPH0618190B2 (ja) 1984-05-29 1984-05-29 ウエハ加工用フイルム
JP59164328A JPS6143677A (ja) 1984-08-07 1984-08-07 Ｉｃプロセス用フイルム
PCT/JP1985/000284 WO1985005734A1 (en) 1984-05-29 1985-05-23 Film for machining wafers

Publications (1)

Publication Number Publication Date
SG53191G true SG53191G (en) 1991-08-23

Family

ID=26447564

Family Applications (1)

Application Number Title Priority Date Filing Date
SG53191A SG53191G (en) 1984-05-29 1991-07-09 Film for machining wafers

Country Status (6)

Country Link
US (2) US4853286A (de)
EP (1) EP0185767B1 (de)
KR (1) KR900001236B1 (de)
DE (1) DE3581514D1 (de)
SG (1) SG53191G (de)
WO (1) WO1985005734A1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715893B2 (ja) * 1988-07-14 1995-02-22 株式会社東芝 ドーパントフイルムおよび半導体基板の不純物拡散方法
US5024867A (en) * 1987-10-28 1991-06-18 Kabushiki Kaisha Toshiba Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer
US5183699A (en) * 1989-08-01 1993-02-02 Mitsui Toatsu Chemicals, Inc. Wafer processing films
US4985293A (en) * 1989-08-14 1991-01-15 Eastman Kodak Company Polymer blend for molded circuit boards and other selectively conductive molded devices
KR910015403A (ko) * 1990-02-14 1991-09-30 사와무라 하루오 웨이퍼 가공용 필름
FR2677293A1 (fr) * 1991-06-06 1992-12-11 Commissariat Energie Atomique Machine de polissage a tete support de plaquettes perfectionnee.
KR930006846A (ko) * 1991-09-02 1993-04-22 사와무라 하루오 반도체 웨이퍼의 이면 연삭방법 및 그 방법에 이용하는 점착 테이프
US5268065A (en) * 1992-12-21 1993-12-07 Motorola, Inc. Method for thinning a semiconductor wafer
JP3821870B2 (ja) * 1994-10-07 2006-09-13 スリーエム カンパニー 難燃性熱硬化性樹脂組成物
TW348279B (en) * 1995-04-10 1998-12-21 Matsushita Electric Ind Co Ltd Substrate grinding method
US5648136A (en) * 1995-07-11 1997-07-15 Minnesota Mining And Manufacturing Co. Component carrier tape
TW311927B (de) * 1995-07-11 1997-08-01 Minnesota Mining & Mfg
US5851631A (en) * 1995-12-08 1998-12-22 Raytheon Company Composite infrared windows using silicon and plastic
TW376585B (en) * 1997-03-26 1999-12-11 Canon Kk Semiconductor substrate and process for producing same
JP3903447B2 (ja) * 1998-01-21 2007-04-11 リンテック株式会社 粘着シート
US6235387B1 (en) 1998-03-30 2001-05-22 3M Innovative Properties Company Semiconductor wafer processing tapes
US7105226B2 (en) * 1998-08-26 2006-09-12 Lintec Corporation Pressure sensitive adhesive double coated sheet and method of use thereof
US6333208B1 (en) 1999-07-13 2001-12-25 Li Chiung-Tung Robust manufacturing method for making a III-V compound semiconductor device by misaligned wafer bonding
US20020004358A1 (en) * 2000-03-17 2002-01-10 Krishna Vepa Cluster tool systems and methods to eliminate wafer waviness during grinding
KR20020061737A (ko) * 2001-01-17 2002-07-25 삼성전자 주식회사 반도체 제조장치 및 반도체 제조장치의 웨이퍼 가공방법
US6672943B2 (en) 2001-01-26 2004-01-06 Wafer Solutions, Inc. Eccentric abrasive wheel for wafer processing
US6632012B2 (en) 2001-03-30 2003-10-14 Wafer Solutions, Inc. Mixing manifold for multiple inlet chemistry fluids
US20030064579A1 (en) * 2001-09-27 2003-04-03 Masafumi Miyakawa Surface protecting adhesive film for semiconductor wafer and protecting method for semiconductor wafer using said adhesive film
US20030092246A1 (en) * 2001-10-11 2003-05-15 Wanat Stanley F. Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
US6713366B2 (en) * 2002-06-12 2004-03-30 Intel Corporation Method of thinning a wafer utilizing a laminated reinforcing layer over the device side
US20050153129A1 (en) * 2002-07-26 2005-07-14 Nitto Denko Corporation Pressure-sensitive adhesive sheet, method for producing the same and method for using the same as well as a multi-layer sheet for use in the pressure-sensitive adhesive sheet and method for producing the same
US20080193728A1 (en) * 2002-07-26 2008-08-14 Nitto Denko Corporation Pressure-sensitive adhesive sheet, method for producing the same and method for using the same as well as a multi-layer sheet for use in the pressure-sensitive adhesive sheet and method for producing the same
KR101016081B1 (ko) * 2002-07-26 2011-02-17 닛토덴코 가부시키가이샤 점착 시트와 그의 제조방법, 상기 점착 시트의 사용방법,및 상기 점착 시트에 사용되는 다층 시트와 그의 제조방법
EP1588802A1 (de) * 2004-04-20 2005-10-26 Psiloquest, Inc. Polierkissen widerstandsfähig gegen Delamination
US20070003758A1 (en) * 2004-04-01 2007-01-04 National Starch And Chemical Investment Holding Corporation Dicing die bonding film
US7244663B2 (en) * 2004-08-31 2007-07-17 Micron Technology, Inc. Wafer reinforcement structure and methods of fabrication
KR100909902B1 (ko) 2007-04-27 2009-07-30 삼성전자주식회사 플래쉬 메모리 장치 및 플래쉬 메모리 시스템
US20130084459A1 (en) 2011-09-30 2013-04-04 3M Innovative Properties Company Low peel adhesive
KR102416914B1 (ko) * 2015-12-01 2022-07-06 삼성디스플레이 주식회사 플렉서블 표시장치
US11276600B2 (en) * 2016-03-31 2022-03-15 Mitsui Chemicals Tohcello, Inc. Film for component manufacture and component manufacturing method
EP3750963A4 (de) * 2018-02-05 2021-12-15 Nitto Denko Corporation Haftfolie und ablösungsverfahren für haftfolie

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2970730A (en) * 1957-01-08 1961-02-07 Motorola Inc Dicing semiconductor wafers
US3453783A (en) * 1966-06-30 1969-07-08 Texas Instruments Inc Apparatus for holding silicon slices
JPS50340B1 (de) * 1970-09-19 1975-01-08
US4132037A (en) * 1977-02-28 1979-01-02 Siltec Corporation Apparatus for polishing semiconductor wafers
US4138304A (en) * 1977-11-03 1979-02-06 General Electric Company Wafer sawing technique
US4243500A (en) * 1978-12-04 1981-01-06 International Coatings, Co., Inc. Pressure sensitive adhesives
JPS5653171A (en) * 1979-09-11 1981-05-12 Hitachi Chem Co Ltd Preparation of adhesive film
JPS5695974A (en) * 1979-12-28 1981-08-03 Shin Etsu Chem Co Ltd Releasable silicone type adhesive base
US4395451A (en) * 1980-07-14 1983-07-26 Althouse Victor E Semiconductor wafer and die handling method and means
JPS5737836A (en) * 1980-08-20 1982-03-02 Nec Corp Manufacture of semiconductor device
JPS5745929A (en) * 1980-09-02 1982-03-16 Nec Corp Grinding method for semiconductor wafer
JPS5922329A (ja) * 1982-07-29 1984-02-04 Nec Corp 半導体ウエハの研摩用ポリシヤ
US4512113A (en) * 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
JPS59103342A (ja) * 1982-12-06 1984-06-14 Nec Corp 半導体装置の製造方法
IE55238B1 (en) * 1983-08-03 1990-07-04 Nat Starch Chem Corp Carrier film with conductive adhesive for dicing of semiconductor wafers
DE3639266A1 (de) * 1985-12-27 1987-07-02 Fsk K K Haftfolie

Also Published As

Publication number Publication date
EP0185767A4 (de) 1987-09-02
WO1985005734A1 (en) 1985-12-19
US4853286A (en) 1989-08-01
DE3581514D1 (de) 1991-02-28
US4928438A (en) 1990-05-29
KR860700182A (ko) 1986-03-31
EP0185767B1 (de) 1991-01-23
KR900001236B1 (ko) 1990-03-05
EP0185767A1 (de) 1986-07-02

Similar Documents

Publication Publication Date Title
SG53191G (en) Film for machining wafers
EP0454362A3 (en) Backing pad, method for precision surface machining thereof, and method for polishing semiconductor wafer by use of the backing pad
TW338015B (en) Improved method and apparatus for chemical mechanical polishing
MY104709A (en) Adhesive sheet.
TW376350B (en) Process for polishing a semiconductor device substrate
MY130639A (en) Method of rough polishing semiconductor wafers to reduce surface roughness
EP0776030A3 (de) Vorrichtung und Verfahren zur beidseitigen Polierung einer Halbleiterscheibe
EP0981156A3 (de) Haftklebefolie zum Oberflächenschutz beim Schleifen der Rückseite eines Halbleiterplättchens und Verfahren zur Verwendung derselben
HK64994A (en) Watch glass and method for manufacturing such a glass
SE8505260D0 (sv) Sker
IL90122A0 (en) Optically flat surfaces on processed silicon wafers
EP0161829A3 (en) Process for preparing diamond thin film and p-type diamond semiconductor
EP0157508A3 (en) Thin adhesive sheet for use in working semiconductor wafers
GB9204961D0 (en) Method of mounting silicon chips on metallic mounting surfaces
DE69132826D1 (de) Heizgerät für Halbleiterwafers oder Substrate
AU2002345752A1 (en) High amount of beneficial components in the top of a substrates
DE69427749D1 (de) Festes substrat mit hydrophilen reaktiven gruppen an der oberfläche
EP0150074A3 (en) Method and apparatus for grinding the surface of a semiconductor wafer
PT84274A (en) Substrate for abrasive grit adhesives
TW343354B (en) Reticle and pattern and correction method using the shifting of the reticle
DE3369581D1 (en) Time piece and method of manufacturing the same
IT9048246A0 (it) Procedimento per la lucidatura chimica meccanica bilaterale di fette di semiconduttori, nonche' dispositivo per la sua esecuzione, e fette di semiconduttori ottenibili con questo.
DE3364665D1 (en) Method for grinding the surface of a semiconductor wafer
TW350101B (en) A semiconductor device grinding method
DK1157310T3 (da) Fremgangsmåde til replikering af et overfladerelief og en artikel til at holde eller bære et overfladerelief