SG42804A1 - Use of oxalyl chloride to form chloride-doped silicon dioxide films on silicon substrates - Google Patents

Use of oxalyl chloride to form chloride-doped silicon dioxide films on silicon substrates

Info

Publication number
SG42804A1
SG42804A1 SG1995002046A SG1995002046A SG42804A1 SG 42804 A1 SG42804 A1 SG 42804A1 SG 1995002046 A SG1995002046 A SG 1995002046A SG 1995002046 A SG1995002046 A SG 1995002046A SG 42804 A1 SG42804 A1 SG 42804A1
Authority
SG
Singapore
Prior art keywords
chloride
dioxide films
silicon dioxide
oxalyl chloride
doped silicon
Prior art date
Application number
SG1995002046A
Other languages
English (en)
Inventor
Michael J Mcgeary
Herman J Boeglin
Original Assignee
Olin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olin Corp filed Critical Olin Corp
Publication of SG42804A1 publication Critical patent/SG42804A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • ing And Chemical Polishing (AREA)
SG1995002046A 1992-05-29 1993-05-27 Use of oxalyl chloride to form chloride-doped silicon dioxide films on silicon substrates SG42804A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/891,484 US5721176A (en) 1992-05-29 1992-05-29 Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates

Publications (1)

Publication Number Publication Date
SG42804A1 true SG42804A1 (en) 1997-10-17

Family

ID=25398271

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1995002046A SG42804A1 (en) 1992-05-29 1993-05-27 Use of oxalyl chloride to form chloride-doped silicon dioxide films on silicon substrates

Country Status (6)

Country Link
US (1) US5721176A (de)
EP (1) EP0577262B1 (de)
JP (1) JP2559195B2 (de)
KR (1) KR0143755B1 (de)
DE (1) DE69305251T2 (de)
SG (1) SG42804A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6387827B1 (en) 1997-03-28 2002-05-14 Imec (Vzw) Method for growing thin silicon oxides on a silicon substrate using chlorine precursors
US6303522B1 (en) 1997-11-19 2001-10-16 Imec Vzw Oxidation in an ambient comprising ozone and the reaction products of an organic chloro-carbon precursor
WO2002003438A1 (en) * 2000-07-06 2002-01-10 Mattson Thermal Products Inc. Method and apparatus for rapid thermal processing (rtp) of semiconductor wafers
CN117862147B (zh) * 2024-03-12 2024-05-17 粤芯半导体技术股份有限公司 炉管设备的清洗方法及半导体工艺方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816140A (en) * 1955-07-01 1957-12-10 Du Pont Process for the production of oxalyl chloride
US3793263A (en) * 1972-02-14 1974-02-19 Standard Oil Co Polymerization catalyst and process using a chloride treated supported molybdenum oxide
FR2488443A1 (fr) * 1980-08-11 1982-02-12 Western Electric Co Procede et dispositif d'oxydation de tranches de silicium
US4612258A (en) * 1984-12-21 1986-09-16 Zilog, Inc. Method for thermally oxidizing polycide substrates in a dry oxygen environment and semiconductor circuit structures produced thereby
US4606935A (en) * 1985-10-10 1986-08-19 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
EP0405205A3 (en) * 1989-06-12 1992-05-13 Seiko Instruments Inc. Method of producing mos type semiconductor device

Also Published As

Publication number Publication date
DE69305251D1 (de) 1996-11-14
US5721176A (en) 1998-02-24
JP2559195B2 (ja) 1996-12-04
JPH0697157A (ja) 1994-04-08
KR0143755B1 (ko) 1998-08-17
EP0577262A2 (de) 1994-01-05
EP0577262B1 (de) 1996-10-09
EP0577262A3 (de) 1994-10-12
DE69305251T2 (de) 1997-02-13

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