SG195120A1 - Chemical-mechanical polishing liquid - Google Patents

Chemical-mechanical polishing liquid

Info

Publication number
SG195120A1
SG195120A1 SG2013086707A SG2013086707A SG195120A1 SG 195120 A1 SG195120 A1 SG 195120A1 SG 2013086707 A SG2013086707 A SG 2013086707A SG 2013086707 A SG2013086707 A SG 2013086707A SG 195120 A1 SG195120 A1 SG 195120A1
Authority
SG
Singapore
Prior art keywords
chemical
mechanical polishing
polishing liquid
present
piperazine
Prior art date
Application number
SG2013086707A
Other languages
English (en)
Inventor
Chen Wang
Huafeng He
Original Assignee
Anji Microelectronics Shanghai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Shanghai filed Critical Anji Microelectronics Shanghai
Publication of SG195120A1 publication Critical patent/SG195120A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG2013086707A 2011-06-08 2012-06-04 Chemical-mechanical polishing liquid SG195120A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110153087.2A CN102816530B (zh) 2011-06-08 2011-06-08 一种化学机械抛光液
PCT/CN2012/000763 WO2012167607A1 (zh) 2011-06-08 2012-06-04 一种化学机械抛光液

Publications (1)

Publication Number Publication Date
SG195120A1 true SG195120A1 (en) 2013-12-30

Family

ID=47295425

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013086707A SG195120A1 (en) 2011-06-08 2012-06-04 Chemical-mechanical polishing liquid

Country Status (5)

Country Link
KR (1) KR101924668B1 (zh)
CN (1) CN102816530B (zh)
SG (1) SG195120A1 (zh)
TW (1) TWI510605B (zh)
WO (1) WO2012167607A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8795548B1 (en) * 2013-04-11 2014-08-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Silicon wafer polishing composition and related methods
US8801959B1 (en) * 2013-04-11 2014-08-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable silicon wafer polishing composition and related methods
US9150759B2 (en) * 2013-09-27 2015-10-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing composition for polishing silicon wafers and related methods
CN106189873A (zh) * 2016-07-22 2016-12-07 清华大学 一种抛光组合物
CN111378384A (zh) * 2018-12-28 2020-07-07 安集微电子科技（上海）股份有限公司 一种化学机械抛光液

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088258A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 金属研磨液及びそれを用いる研磨方法
CN101418190B (zh) * 2007-10-26 2013-10-02 安集微电子（上海）有限公司 一种化学机械抛光液
CN101463227B (zh) * 2007-12-21 2013-06-12 安集微电子（上海）有限公司 一种用于阻挡层抛光的化学机械抛光液
US9202709B2 (en) * 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
JP2010192556A (ja) * 2009-02-17 2010-09-02 Fujifilm Corp 金属用研磨液、および化学的機械的研磨方法
KR101277342B1 (ko) * 2009-04-20 2013-06-20 히타치가세이가부시끼가이샤 반도체 기판용 연마액 및 반도체 기판의 연마 방법
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon

Also Published As

Publication number Publication date
WO2012167607A1 (zh) 2012-12-13
TW201249976A (en) 2012-12-16
TWI510605B (zh) 2015-12-01
KR101924668B1 (ko) 2018-12-03
CN102816530B (zh) 2016-01-27
KR20140049985A (ko) 2014-04-28
CN102816530A (zh) 2012-12-12

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