SG195120A1 - Chemical-mechanical polishing liquid - Google Patents
Chemical-mechanical polishing liquidInfo
- Publication number
- SG195120A1 SG195120A1 SG2013086707A SG2013086707A SG195120A1 SG 195120 A1 SG195120 A1 SG 195120A1 SG 2013086707 A SG2013086707 A SG 2013086707A SG 2013086707 A SG2013086707 A SG 2013086707A SG 195120 A1 SG195120 A1 SG 195120A1
- Authority
- SG
- Singapore
- Prior art keywords
- chemical
- mechanical polishing
- polishing liquid
- present
- piperazine
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 4
- 239000007788 liquid Substances 0.000 title abstract 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 abstract 2
- 150000003851 azoles Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
CHEMICAL-MECHANICAL POLISHING LIQUID AbstractThe present invention discloses a chemical mechanical polishing slurry composition, comprising: abrasive particles, water, azole compounds and piperazine. The aim of the present invention is to achieve high polishing rate of Si, to provide a high stable system and to reduce the overall cost of semiconductor process.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110153087.2A CN102816530B (en) | 2011-06-08 | 2011-06-08 | A kind of chemical mechanical polishing liquid |
PCT/CN2012/000763 WO2012167607A1 (en) | 2011-06-08 | 2012-06-04 | Chemical-mechanical polishing liquid |
Publications (1)
Publication Number | Publication Date |
---|---|
SG195120A1 true SG195120A1 (en) | 2013-12-30 |
Family
ID=47295425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013086707A SG195120A1 (en) | 2011-06-08 | 2012-06-04 | Chemical-mechanical polishing liquid |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR101924668B1 (en) |
CN (1) | CN102816530B (en) |
SG (1) | SG195120A1 (en) |
TW (1) | TWI510605B (en) |
WO (1) | WO2012167607A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8795548B1 (en) * | 2013-04-11 | 2014-08-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Silicon wafer polishing composition and related methods |
US8801959B1 (en) * | 2013-04-11 | 2014-08-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable silicon wafer polishing composition and related methods |
US9150759B2 (en) * | 2013-09-27 | 2015-10-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing composition for polishing silicon wafers and related methods |
CN106189873A (en) * | 2016-07-22 | 2016-12-07 | 清华大学 | A kind of polishing composition |
CN111378384A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子科技(上海)股份有限公司 | Chemical mechanical polishing solution |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007088258A (en) * | 2005-09-22 | 2007-04-05 | Fujifilm Corp | Metal polishing solution and polishing method using it |
CN101418190B (en) * | 2007-10-26 | 2013-10-02 | 安集微电子(上海)有限公司 | Chemico-mechanical polishing liquid |
CN101463227B (en) * | 2007-12-21 | 2013-06-12 | 安集微电子(上海)有限公司 | Chemico-mechanical polishing solution for barrier layer |
US9202709B2 (en) * | 2008-03-19 | 2015-12-01 | Fujifilm Corporation | Polishing liquid for metal and polishing method using the same |
US8017524B2 (en) * | 2008-05-23 | 2011-09-13 | Cabot Microelectronics Corporation | Stable, high rate silicon slurry |
US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
JP2010192556A (en) * | 2009-02-17 | 2010-09-02 | Fujifilm Corp | Polishing solution for metal, and chemical mechanical polishing method |
JP5413456B2 (en) * | 2009-04-20 | 2014-02-12 | 日立化成株式会社 | Polishing liquid for semiconductor substrate and method for polishing semiconductor substrate |
US8883034B2 (en) * | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
-
2011
- 2011-06-08 CN CN201110153087.2A patent/CN102816530B/en active Active
-
2012
- 2012-06-04 WO PCT/CN2012/000763 patent/WO2012167607A1/en active Application Filing
- 2012-06-04 SG SG2013086707A patent/SG195120A1/en unknown
- 2012-06-04 KR KR1020137029860A patent/KR101924668B1/en active IP Right Grant
- 2012-06-07 TW TW101120379A patent/TWI510605B/en active
Also Published As
Publication number | Publication date |
---|---|
TWI510605B (en) | 2015-12-01 |
WO2012167607A1 (en) | 2012-12-13 |
KR20140049985A (en) | 2014-04-28 |
CN102816530B (en) | 2016-01-27 |
TW201249976A (en) | 2012-12-16 |
KR101924668B1 (en) | 2018-12-03 |
CN102816530A (en) | 2012-12-12 |
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