SG178479A1 - Crack-resistant thermal bend actuator - Google Patents
Crack-resistant thermal bend actuator Download PDFInfo
- Publication number
- SG178479A1 SG178479A1 SG2012011185A SG2012011185A SG178479A1 SG 178479 A1 SG178479 A1 SG 178479A1 SG 2012011185 A SG2012011185 A SG 2012011185A SG 2012011185 A SG2012011185 A SG 2012011185A SG 178479 A1 SG178479 A1 SG 178479A1
- Authority
- SG
- Singapore
- Prior art keywords
- actuator
- layer
- active beam
- passive
- thermal bend
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 27
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000005452 bending Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 18
- 238000000429 assembly Methods 0.000 claims description 9
- 230000000712 assembly Effects 0.000 claims description 9
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- PTXMVOUNAHFTFC-UHFFFAOYSA-N alumane;vanadium Chemical compound [AlH3].[V] PTXMVOUNAHFTFC-UHFFFAOYSA-N 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 58
- 238000004519 manufacturing process Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000013461 design Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000005336 cracking Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000002386 leaching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- -1 polydimethylsiloxane Polymers 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920001600 hydrophobic polymer Polymers 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002032 lab-on-a-chip Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003255 poly(phenylsilsesquioxane) Polymers 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14427—Structure of ink jet print heads with thermal bend detached actuators
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Micromachines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/AU2009/001089 WO2011022750A1 (en) | 2009-08-25 | 2009-08-25 | Crack-resistant thermal bend actuator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG178479A1 true SG178479A1 (en) | 2012-04-27 |
Family
ID=43627058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012011185A SG178479A1 (en) | 2009-08-25 | 2009-08-25 | Crack-resistant thermal bend actuator |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2490896B1 (ja) |
| JP (1) | JP5561747B2 (ja) |
| KR (1) | KR20120057608A (ja) |
| AU (1) | AU2009351617B2 (ja) |
| SG (1) | SG178479A1 (ja) |
| WO (1) | WO2011022750A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130222481A1 (en) * | 2012-02-27 | 2013-08-29 | Toshiba Tec Kabushiki Kaisha | Inkjet head and method of manufacturing the same |
| JP5814963B2 (ja) * | 2013-03-08 | 2015-11-17 | 東芝テック株式会社 | インクジェットヘッド、インクジェット記録装置、およびインクジェットヘッドの製造方法 |
| JP6376690B2 (ja) * | 2014-08-28 | 2018-08-22 | 東芝テック株式会社 | 液滴噴射装置および画像形成装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0999934B1 (en) * | 1997-07-15 | 2005-10-26 | Silver Brook Research Pty, Ltd | A thermally actuated ink jet |
| US6557977B1 (en) * | 1997-07-15 | 2003-05-06 | Silverbrook Research Pty Ltd | Shape memory alloy ink jet printing mechanism |
| US6623101B1 (en) | 2000-10-20 | 2003-09-23 | Silverbrook Research Pty Ltd | Moving nozzle ink jet |
| US6631979B2 (en) * | 2002-01-17 | 2003-10-14 | Eastman Kodak Company | Thermal actuator with optimized heater length |
| US6824249B2 (en) * | 2002-08-23 | 2004-11-30 | Eastman Kodak Company | Tapered thermal actuator |
| US7073890B2 (en) * | 2003-08-28 | 2006-07-11 | Eastman Kodak Company | Thermally conductive thermal actuator and liquid drop emitter using same |
| JP2005219426A (ja) * | 2004-02-09 | 2005-08-18 | Ricoh Co Ltd | 液体吐出ヘッド、液体カートリッジ、液体吐出装置、画像形成装置及び液体吐出ヘッドの製造方法 |
| JP4480132B2 (ja) * | 2004-02-18 | 2010-06-16 | キヤノン株式会社 | 液体吐出用ヘッドの製造方法 |
| JP2006231800A (ja) * | 2005-02-28 | 2006-09-07 | Sony Corp | 液体吐出ヘッド、液体吐出装置、液体吐出方法、及び液体吐出ヘッドの吐出媒体 |
| US7413289B2 (en) * | 2005-12-23 | 2008-08-19 | Lexmark International, Inc. | Low energy, long life micro-fluid ejection device |
| US7654641B2 (en) | 2006-12-04 | 2010-02-02 | Silverbrook Research Pty Ltd | Inkjet nozzle assembly having moving roof portion defined by a thermal bend actuator having a plurality of cantilever beams |
| JP5205396B2 (ja) * | 2007-03-12 | 2013-06-05 | ザムテック・リミテッド | 疎水性のインク噴射面を有する印刷ヘッドを製造する方法 |
-
2009
- 2009-08-25 AU AU2009351617A patent/AU2009351617B2/en active Active
- 2009-08-25 SG SG2012011185A patent/SG178479A1/en unknown
- 2009-08-25 KR KR1020127001728A patent/KR20120057608A/ko not_active Application Discontinuation
- 2009-08-25 JP JP2012516434A patent/JP5561747B2/ja active Active
- 2009-08-25 EP EP09848585.7A patent/EP2490896B1/en active Active
- 2009-08-25 WO PCT/AU2009/001089 patent/WO2011022750A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012530624A (ja) | 2012-12-06 |
| AU2009351617A1 (en) | 2013-02-07 |
| EP2490896A1 (en) | 2012-08-29 |
| KR20120057608A (ko) | 2012-06-05 |
| EP2490896A4 (en) | 2014-07-23 |
| EP2490896B1 (en) | 2016-05-25 |
| WO2011022750A1 (en) | 2011-03-03 |
| AU2009351617B2 (en) | 2013-06-27 |
| JP5561747B2 (ja) | 2014-07-30 |
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