SG162694A1 - Silicon wafer and method for producing the same - Google Patents
Silicon wafer and method for producing the sameInfo
- Publication number
- SG162694A1 SG162694A1 SG200908405-4A SG2009084054A SG162694A1 SG 162694 A1 SG162694 A1 SG 162694A1 SG 2009084054 A SG2009084054 A SG 2009084054A SG 162694 A1 SG162694 A1 SG 162694A1
- Authority
- SG
- Singapore
- Prior art keywords
- silicon wafer
- equal
- void
- producing
- density
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008334755 | 2008-12-26 | ||
JP2009194085A JP5346744B2 (ja) | 2008-12-26 | 2009-08-25 | シリコンウエハ及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG162694A1 true SG162694A1 (en) | 2010-07-29 |
Family
ID=41801023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200908405-4A SG162694A1 (en) | 2008-12-26 | 2009-12-17 | Silicon wafer and method for producing the same |
Country Status (8)
Country | Link |
---|---|
US (1) | US8524001B2 (de) |
EP (1) | EP2206809B1 (de) |
JP (1) | JP5346744B2 (de) |
KR (1) | KR101102203B1 (de) |
CN (1) | CN101768776B (de) |
AT (1) | ATE510939T1 (de) |
SG (1) | SG162694A1 (de) |
TW (1) | TWI404840B (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2345752B1 (de) * | 2009-12-29 | 2012-02-15 | Siltronic AG | Siliciumwafer und Herstellungsverfahren dafür |
US9945048B2 (en) * | 2012-06-15 | 2018-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method |
WO2014003252A1 (en) | 2012-06-28 | 2014-01-03 | Idt International Co., Ltd. | Method and apparatus for manufacturing graphite oxide |
EP2867162A4 (de) | 2012-06-28 | 2016-03-02 | Standardgraphene Co Ltd | Vorrichtung zur herstellung eines graphenstrukturmaterials in nanogrösse |
US11111602B2 (en) | 2014-07-31 | 2021-09-07 | Globalwafers Co., Ltd. | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size |
JP6493105B2 (ja) * | 2015-09-04 | 2019-04-03 | 株式会社Sumco | エピタキシャルシリコンウェーハ |
JP6981750B2 (ja) * | 2016-12-21 | 2021-12-17 | 株式会社Sumco | シリコン単結晶の製造方法およびシリコン単結晶 |
JP7040491B2 (ja) * | 2019-04-12 | 2022-03-23 | 株式会社Sumco | シリコン単結晶の製造時におけるギャップサイズ決定方法、および、シリコン単結晶の製造方法 |
JP7561498B2 (ja) * | 2020-02-14 | 2024-10-04 | グローバルウェーハズ・ジャパン株式会社 | シリコン単結晶の製造方法 |
CN111996594B (zh) * | 2020-09-01 | 2021-09-28 | 晶科能源股份有限公司 | 镓、氢、氮掺杂单晶硅及其制备方法、太阳能电池 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2792996B2 (ja) | 1990-03-06 | 1998-09-03 | 三菱化学株式会社 | グラフト変性オレフィン共重合体の製造法 |
US6800132B1 (en) * | 1999-08-27 | 2004-10-05 | Komatsu Denshi Sinzoku Kabushiki | Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer |
JP3601383B2 (ja) | 1999-11-25 | 2004-12-15 | 信越半導体株式会社 | エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法 |
JP3565205B2 (ja) * | 2000-01-25 | 2004-09-15 | 信越半導体株式会社 | シリコンウエーハおよびシリコン単結晶の製造条件を決定する方法ならびにシリコンウエーハの製造方法 |
JP2004282088A (ja) * | 2000-01-25 | 2004-10-07 | Shin Etsu Handotai Co Ltd | シリコンウエーハ |
US6986925B2 (en) | 2001-01-02 | 2006-01-17 | Memc Electronic Materials, Inc. | Single crystal silicon having improved gate oxide integrity |
JP3664101B2 (ja) * | 2001-05-31 | 2005-06-22 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法および評価方法 |
JP4566478B2 (ja) * | 2001-08-09 | 2010-10-20 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
JP4633977B2 (ja) * | 2001-08-30 | 2011-02-16 | 信越半導体株式会社 | アニールウエーハの製造方法及びアニールウエーハ |
JP4797477B2 (ja) * | 2005-04-08 | 2011-10-19 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP4760729B2 (ja) * | 2006-02-21 | 2011-08-31 | 株式会社Sumco | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
JP2008066357A (ja) * | 2006-09-05 | 2008-03-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法 |
US7777606B2 (en) * | 2007-01-09 | 2010-08-17 | Westerngeco L.L.C. | Fracture cluster mapping |
-
2009
- 2009-08-25 JP JP2009194085A patent/JP5346744B2/ja active Active
- 2009-11-16 CN CN2009102217587A patent/CN101768776B/zh active Active
- 2009-11-27 KR KR1020090115951A patent/KR101102203B1/ko active IP Right Grant
- 2009-12-16 US US12/653,651 patent/US8524001B2/en active Active
- 2009-12-16 EP EP09015562A patent/EP2206809B1/de active Active
- 2009-12-16 AT AT09015562T patent/ATE510939T1/de not_active IP Right Cessation
- 2009-12-17 SG SG200908405-4A patent/SG162694A1/en unknown
- 2009-12-23 TW TW098144430A patent/TWI404840B/zh active
Also Published As
Publication number | Publication date |
---|---|
ATE510939T1 (de) | 2011-06-15 |
CN101768776B (zh) | 2013-03-13 |
TWI404840B (zh) | 2013-08-11 |
CN101768776A (zh) | 2010-07-07 |
EP2206809B1 (de) | 2011-05-25 |
EP2206809A1 (de) | 2010-07-14 |
TW201024478A (en) | 2010-07-01 |
JP2010168267A (ja) | 2010-08-05 |
US20100164071A1 (en) | 2010-07-01 |
KR20100076871A (ko) | 2010-07-06 |
KR101102203B1 (ko) | 2012-01-02 |
US8524001B2 (en) | 2013-09-03 |
JP5346744B2 (ja) | 2013-11-20 |
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