SG160200A1 - Wafer level packaging - Google Patents
Wafer level packagingInfo
- Publication number
- SG160200A1 SG160200A1 SG200608700-1A SG2006087001A SG160200A1 SG 160200 A1 SG160200 A1 SG 160200A1 SG 2006087001 A SG2006087001 A SG 2006087001A SG 160200 A1 SG160200 A1 SG 160200A1
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- traces
- vias
- back side
- trench
- Prior art date
Links
Abstract
Through vias in a substrate are formed by creating a trench in a top side of the substrate and at least one trench in the back side of the substrate. The sum of the depths of the trenches at least equals the height of the substrate. The trenches cross at intersections, which accordingly form the through vias from the top side to the back side. The through vias are filled with a conductor to form contacts on both sides and the edge of the substrate. Contacts on the backside are formed at each of the trench. The through vias from the edge contacts. Traces connect bond pads to the conductor in the through via. Some traces are parallel to the back side traces. Some traces are skew to the back side traces. The substrate is diced to form individual die.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200608700-1A SG160200A1 (en) | 2002-06-14 | 2002-06-14 | Wafer level packaging |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200608700-1A SG160200A1 (en) | 2002-06-14 | 2002-06-14 | Wafer level packaging |
Publications (1)
Publication Number | Publication Date |
---|---|
SG160200A1 true SG160200A1 (en) | 2010-04-29 |
Family
ID=42269902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200608700-1A SG160200A1 (en) | 2002-06-14 | 2002-06-14 | Wafer level packaging |
Country Status (1)
Country | Link |
---|---|
SG (1) | SG160200A1 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6164176A (en) * | 1984-09-05 | 1986-04-02 | Sanyo Electric Co Ltd | Dividing method of light-emitting diode |
EP0802416A2 (en) * | 1996-04-19 | 1997-10-22 | Seiko Instruments R&D Center Inc. | Manufacturing method of semiconductor acceleration sensor |
-
2002
- 2002-06-14 SG SG200608700-1A patent/SG160200A1/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6164176A (en) * | 1984-09-05 | 1986-04-02 | Sanyo Electric Co Ltd | Dividing method of light-emitting diode |
EP0802416A2 (en) * | 1996-04-19 | 1997-10-22 | Seiko Instruments R&D Center Inc. | Manufacturing method of semiconductor acceleration sensor |
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