SG158017A1 - Lithographic apparatus and method - Google Patents

Lithographic apparatus and method

Info

Publication number
SG158017A1
SG158017A1 SG200903707-8A SG2009037078A SG158017A1 SG 158017 A1 SG158017 A1 SG 158017A1 SG 2009037078 A SG2009037078 A SG 2009037078A SG 158017 A1 SG158017 A1 SG 158017A1
Authority
SG
Singapore
Prior art keywords
lithographic apparatus
heating
cooling devices
final element
projection system
Prior art date
Application number
SG200903707-8A
Other languages
English (en)
Inventor
Franciscus Johannes Joseph Janssen
Siebe Landheer
Yuecel Koek
Marcel Beckers
Ivo Adam Johannes Thomas
Marcio Alexandre Cano Miranda
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG158017A1 publication Critical patent/SG158017A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG200903707-8A 2008-06-18 2009-06-01 Lithographic apparatus and method SG158017A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12931408P 2008-06-18 2008-06-18

Publications (1)

Publication Number Publication Date
SG158017A1 true SG158017A1 (en) 2010-01-29

Family

ID=40981412

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200903707-8A SG158017A1 (en) 2008-06-18 2009-06-01 Lithographic apparatus and method
SG2011090693A SG177192A1 (en) 2008-06-18 2009-06-01 Lithographic apparatus and method

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2011090693A SG177192A1 (en) 2008-06-18 2009-06-01 Lithographic apparatus and method

Country Status (7)

Country Link
US (1) US8451423B2 (de)
EP (1) EP2136250A1 (de)
JP (2) JP4972127B2 (de)
KR (1) KR101118659B1 (de)
CN (2) CN101609268B (de)
SG (2) SG158017A1 (de)
TW (1) TWI421644B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070115859A (ko) * 2005-03-18 2007-12-06 가부시키가이샤 니콘 노광 방법 및 노광 장치, 디바이스 제조 방법, 그리고 노광장치의 평가 방법
NL2004808A (en) 2009-06-30 2011-01-12 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
EP2365390A3 (de) * 2010-03-12 2017-10-04 ASML Netherlands B.V. Lithographische Vorrichtung und Verfahren
WO2012097833A1 (en) 2011-01-20 2012-07-26 Carl Zeiss Smt Gmbh Method of operating a projection exposure tool
JP6122252B2 (ja) * 2012-05-01 2017-04-26 キヤノン株式会社 露光装置及びデバイスの製造方法
JP6041541B2 (ja) * 2012-06-04 2016-12-07 キヤノン株式会社 露光装置及びデバイス製造方法
US9377566B1 (en) 2012-12-31 2016-06-28 Nlight, Inc. Flexible irradiance in laser imaging
DE102013203338A1 (de) * 2013-02-28 2014-08-28 Carl Zeiss Smt Gmbh Modellbasierte Steuerung einer optischen Abbildungseinrichtung
JP6216460B2 (ja) * 2013-08-30 2017-10-18 エーエスエムエル ネザーランズ ビー．ブイ． 液浸リソグラフィ装置
WO2016096508A1 (en) * 2014-12-19 2016-06-23 Asml Netherlands B.V. A fluid handling structure, a lithographic apparatus and a device manufacturing method

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
EP1420300B1 (de) 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524558A1 (de) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602004030365D1 (de) 2003-10-22 2011-01-13 Nippon Kogaku Kk Belichtungsvorrichtung, belichtungsverfahren und verfahren zur bauelementeherstellung
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1938646B (zh) * 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
JP5167572B2 (ja) * 2004-02-04 2013-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
EP3252533B1 (de) 2004-02-04 2019-04-10 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung eines artikels
JP4543767B2 (ja) 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124359A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP5040646B2 (ja) 2005-03-23 2012-10-03 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US7440076B2 (en) * 2005-09-29 2008-10-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
JP2007184336A (ja) 2006-01-05 2007-07-19 Canon Inc 露光装置及びデバイス製造方法
US7701551B2 (en) 2006-04-14 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7675604B2 (en) * 2006-05-04 2010-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Hood for immersion lithography
DE102006021797A1 (de) * 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2131241B1 (de) 2008-05-08 2019-07-31 ASML Netherlands B.V. Flüssigkeitshandhabungsstruktur, lithografische Vorrichtung und Vorrichtungsherstellungsverfahren
SG159467A1 (en) 2008-09-02 2010-03-30 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
JP2012138630A (ja) 2012-07-19
US20090316121A1 (en) 2009-12-24
CN101609268A (zh) 2009-12-23
EP2136250A1 (de) 2009-12-23
CN102402132A (zh) 2012-04-04
US8451423B2 (en) 2013-05-28
JP5290448B2 (ja) 2013-09-18
SG177192A1 (en) 2012-01-30
JP4972127B2 (ja) 2012-07-11
JP2010004039A (ja) 2010-01-07
KR101118659B1 (ko) 2012-03-06
CN101609268B (zh) 2012-01-18
CN102402132B (zh) 2015-04-22
TW201009506A (en) 2010-03-01
KR20090131669A (ko) 2009-12-29
TWI421644B (zh) 2014-01-01

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