SG155061A1 - Photoresist composition for deep ultraviolet lithography - Google Patents

Photoresist composition for deep ultraviolet lithography

Info

Publication number
SG155061A1
SG155061A1 SG200705091-7A SG2007050917A SG155061A1 SG 155061 A1 SG155061 A1 SG 155061A1 SG 2007050917 A SG2007050917 A SG 2007050917A SG 155061 A1 SG155061 A1 SG 155061A1
Authority
SG
Singapore
Prior art keywords
photoresist composition
deep ultraviolet
ultraviolet lithography
lithography
deep
Prior art date
Application number
SG200705091-7A
Other languages
English (en)
Inventor
Ralph R Dammel
Raj Sakamuri
Francis M Houlihan
Original Assignee
Az Electronic Materials Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan filed Critical Az Electronic Materials Japan
Priority claimed from PCT/EP2004/001194 external-priority patent/WO2004074928A2/en
Publication of SG155061A1 publication Critical patent/SG155061A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SG200705091-7A 2003-02-21 2004-02-10 Photoresist composition for deep ultraviolet lithography SG155061A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/371,262 US20040166434A1 (en) 2003-02-21 2003-02-21 Photoresist composition for deep ultraviolet lithography
US10/658,840 US7211366B2 (en) 2003-02-21 2003-12-17 Photoresist composition for deep ultraviolet lithography
PCT/EP2004/001194 WO2004074928A2 (en) 2003-02-21 2004-02-10 Photoresist composition for deep ultraviolet lithography

Publications (1)

Publication Number Publication Date
SG155061A1 true SG155061A1 (en) 2009-09-30

Family

ID=32868306

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200705091-7A SG155061A1 (en) 2003-02-21 2004-02-10 Photoresist composition for deep ultraviolet lithography

Country Status (3)

Country Link
US (2) US20040166434A1 (zh)
CN (1) CN1809789A (zh)
SG (1) SG155061A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7700257B2 (en) * 2003-03-28 2010-04-20 Tokyo Ohka Kogyo Co., Ltd. Photoresist composition and resist pattern formation method by the use thereof
JP4360844B2 (ja) * 2003-06-16 2009-11-11 富士フイルム株式会社 ポジ型レジスト組成物
DE10350685B4 (de) * 2003-10-30 2010-05-27 Az Electronic Materials Usa Corp. Fotoresist geeignet zur Verwendung in der 157 nm-Fotolithografie, enthaltend ein Polymer auf Basis von fluorierten Norbornen-Derivaten
US8053159B2 (en) * 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
KR100960838B1 (ko) * 2004-04-27 2010-06-07 도오꾜오까고오교 가부시끼가이샤 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법
JP4368267B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
US7473749B2 (en) * 2005-06-23 2009-01-06 International Business Machines Corporation Preparation of topcoat compositions and methods of use thereof
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP2010085921A (ja) * 2008-10-02 2010-04-15 Panasonic Corp レジスト材料及びそれを用いたパターン形成方法
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US10377692B2 (en) * 2009-09-09 2019-08-13 Sumitomo Chemical Company, Limited Photoresist composition
US8541523B2 (en) * 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
KR101305111B1 (ko) * 2010-06-30 2013-09-05 주식회사 동진쎄미켐 레지스트 보호막 형성용 중합체, 레지스트 보호막 형성용 조성물 및 이를 이용한 반도체 소자의 패턴 형성방법
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US20130108956A1 (en) 2011-11-01 2013-05-02 Az Electronic Materials Usa Corp. Nanocomposite positive photosensitive composition and use thereof
TWI617629B (zh) * 2013-05-01 2018-03-11 Jsr股份有限公司 具有凹圖案的基材的製造方法、組成物、導電膜的形成方法、電子電路及電子元件
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
CN114874384A (zh) * 2022-01-21 2022-08-09 南通林格橡塑制品有限公司 一种193nm光刻胶成膜树脂及其制备方法和正型光刻胶组合物

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1496757A (en) 1973-12-21 1978-01-05 Glaxo Lab Ltd Cephalosporin derivatives
IL46302A (en) 1973-12-21 1978-09-29 Glaxo Lab Ltd 7 -( -(etherified oxyimino)-acylamido)cephalosporanic acid derivatives
DE3028627A1 (de) 1980-07-29 1982-03-04 Basf Ag, 6700 Ludwigshafen 2-fluoralkancarbonsaeureverbindungen, verfahren zu ihrer herstellung, diese enthaltende herbizide und ihre anwendung
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JP2622402B2 (ja) 1988-06-13 1997-06-18 株式会社日立製作所 磁性膜形成装置
DE69125634T2 (de) 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
CH688319A5 (fr) 1994-06-03 1997-07-31 Marcham Trading & Investment L Procédé pour la préparation du céfixime trihydraté.
JPH08176051A (ja) 1994-12-27 1996-07-09 Mitsui Toatsu Chem Inc スピロビインダン誘導体およびそれを含有するレジスト材料
JPH08193055A (ja) 1995-01-13 1996-07-30 Shin Etsu Chem Co Ltd ２，６−ビス（２−ｔ−ブトキシカルボニルメチロキシフェニルメチル）−１−ｔ−ブトキシカルボニルメチロキシ−４−メチルベンゼン及びその誘導体
JPH09211865A (ja) 1996-02-05 1997-08-15 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
KR100536824B1 (ko) * 1996-03-07 2006-03-09 스미토모 베이클라이트 가부시키가이샤 산불안정성펜던트기를지닌다중고리중합체를포함하는포토레지스트조성물
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6048661A (en) 1997-03-05 2000-04-11 Shin-Etsu Chemical Co., Ltd. Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
CN1253759C (zh) 1998-09-23 2006-04-26 纳幕尔杜邦公司 微石印用光致抗蚀剂、聚合物和工艺
US6849377B2 (en) * 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
JP2000098614A (ja) 1998-09-28 2000-04-07 Fuji Photo Film Co Ltd ポジ型感光性組成物
US6369276B1 (en) 1998-11-19 2002-04-09 Eagleview Technologies, Inc. Catalyst structure for ketone production and method of making and using the same
WO2000067072A1 (en) 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6333436B1 (en) 1999-10-13 2001-12-25 Shin-Etsu Chemical Co., Ltd. Styrene derivatives
US6210859B1 (en) 1999-10-15 2001-04-03 Korea Kumho Petrochemical Co., Ltd. Copolymer for the manufacture of chemical amplified photoresist and a positive photoresist composition using the same
EP1240554A2 (en) 1999-11-17 2002-09-18 E.I. Du Pont De Nemours And Company Nitrile/fluoroalcohol polymer-containing photoresists and associated processes for microlithography
US6468712B1 (en) * 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
EP1275666A4 (en) 2000-04-04 2007-10-24 Daikin Ind Ltd FLUOROPOLYMER COMPRISING A GROUP THAT REACTS TO ACIDS AND PHOTORESIST COMPOSITION WITH CHEMICAL AMPLIFICATION CONTAINING SAID FLUOROPOLYMER
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
EP1302813A4 (en) 2000-06-21 2005-02-23 Asahi Glass Co Ltd RESIST COMPOSITION
JP4190167B2 (ja) 2000-09-26 2008-12-03 富士フイルム株式会社 ポジ型レジスト組成物
KR20020038283A (ko) 2000-11-17 2002-05-23 박종섭 포토레지스트 단량체, 그의 중합체 및 이를 함유하는포토레지스트 조성물
EP1478977A2 (en) 2000-11-29 2004-11-24 E. I. du Pont de Nemours and Company Polymers blends and their use in photoresist compositions for microlithography
US20020081520A1 (en) 2000-12-21 2002-06-27 Ratnam Sooriyakumaran Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications
US7261992B2 (en) 2000-12-21 2007-08-28 International Business Machines Corporation Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions
US6548219B2 (en) 2001-01-26 2003-04-15 International Business Machines Corporation Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions
JP3800538B2 (ja) 2001-02-09 2006-07-26 旭硝子株式会社 レジスト組成物
WO2002073316A1 (fr) * 2001-03-09 2002-09-19 Semiconductor Leading Edge Technologies, Inc. Procédé de formation de motif fin

Also Published As

Publication number Publication date
CN1809789A (zh) 2006-07-26
US20040166433A1 (en) 2004-08-26
US7211366B2 (en) 2007-05-01
US20040166434A1 (en) 2004-08-26

Similar Documents

Publication Publication Date Title
SG155061A1 (en) Photoresist composition for deep ultraviolet lithography
MY136433A (en) Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
EP1795960A3 (en) Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition
EP1560070A4 (en) COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY
EP1717261A4 (en) POLYMER COMPOUND, PHOTORESISTIC COMPOSITION WITH SUCH A POLYMER COMPOUND AND METHOD FOR FORMING A RESISTANCE STRUCTURE
TW200613256A (en) Photoactive compounds
AU2003261317A8 (en) Scatterometry alignment for imprint lithography
IL152271A0 (en) Micro needles formed by lithography
EP1734032A4 (en) CALIX RESININCINAR COMPOUNDS, PHOTORESIST BASE MATERIALS AND COMPOSITIONS THEREOF
IL176160A0 (en) 1,2-di(cyclic)substituted benzene compounds
TW200606580A (en) A chemically amplified positive resist composition, (meth)acrylate derivative and a process for producing the same
EP1378796A4 (en) COMPOSITION FOR FORMING ANTI-REFLECTIVE FILM FOR LITHOGRAPHIC PROCESS
EP1736824A3 (en) Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition
TW200626631A (en) Photosensitizer, photosensitive acid generating agent, and photocurable composition
EP2372456A3 (en) Novel polymers and photoresist compositions
EP1767991A3 (en) Positive resist composition and pattern forming method using the same
MY128511A (en) Photoresist composition for deep ultraviolet lithography.
EP1736485A4 (en) POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD OF MAKING RESIST PATTERN
TW200734830A (en) Lithogrpahic apparatus and device manufacturing method using multiple exposures and multiple exposure types
WO2005066714A3 (en) Photoresist composition
EP1308781A3 (en) Cyclic sulfonium and sulfoxonium photoacid generators and photoresists containing them
EP2332960A3 (en) Cholate photoacid generators and photoresists comprising same
TW200725181A (en) Positive resist composition and pattern forming method using the same
DE60128975D1 (de) Mikrolithographischer Projektionsapparat
MXPA03001351A (es) Agente protector contra el envejecimiento a base de sales fenolicas.