SG150453A1 - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method

Info

Publication number
SG150453A1
SG150453A1 SG200805864-6A SG2008058646A SG150453A1 SG 150453 A1 SG150453 A1 SG 150453A1 SG 2008058646 A SG2008058646 A SG 2008058646A SG 150453 A1 SG150453 A1 SG 150453A1
Authority
SG
Singapore
Prior art keywords
device manufacturing
lithographic apparatus
lithographic
manufacturing
Prior art date
Application number
SG200805864-6A
Other languages
English (en)
Inventor
Judocus Marie Dominicus Stoeldraijer
Erik Roelof Loopstra
Schoot Jan Bernard Plechelmus Van
Diederik Jan Maas
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG150453A1 publication Critical patent/SG150453A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200805864-6A 2007-08-15 2008-08-07 Lithographic apparatus and device manufacturing method SG150453A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/889,722 US8896809B2 (en) 2007-08-15 2007-08-15 Lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
SG150453A1 true SG150453A1 (en) 2009-03-30

Family

ID=39938121

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200805864-6A SG150453A1 (en) 2007-08-15 2008-08-07 Lithographic apparatus and device manufacturing method

Country Status (7)

Country Link
US (1) US8896809B2 (fr)
EP (1) EP2028547A1 (fr)
JP (1) JP2009060099A (fr)
KR (1) KR100986791B1 (fr)
CN (1) CN101369102B (fr)
SG (1) SG150453A1 (fr)
TW (1) TW200912559A (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4928979B2 (ja) * 2007-02-23 2012-05-09 株式会社東芝 露光装置およびリソグラフィシステム
US20100002210A1 (en) * 2007-08-31 2010-01-07 Applied Materials, Inc. Integrated interference-assisted lithography
US20090174873A1 (en) * 2007-12-17 2009-07-09 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US8823921B2 (en) * 2011-08-19 2014-09-02 Ultratech, Inc. Programmable illuminator for a photolithography system
CN109324485A (zh) * 2011-08-30 2019-02-12 株式会社尼康 曝光方法、制造方法和基板处理方法
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP6337757B2 (ja) * 2014-01-20 2018-06-06 東京エレクトロン株式会社 露光装置、レジストパターン形成方法及び記憶媒体
US9829806B2 (en) 2014-03-14 2017-11-28 Taiwan Semiconductor Manufacturing Company Limited Lithography tool with backside polisher
US9891529B2 (en) * 2014-03-28 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd Light transmission device and method for semiconductor manufacturing process
TWM523958U (zh) * 2014-08-01 2016-06-11 應用材料股份有限公司 用於執行光刻製程的處理系統
CN105372941A (zh) * 2014-08-28 2016-03-02 上海微电子装备有限公司 一种提供玻璃基板边缘曝光的多功能曝光机
CN106707692B (zh) * 2015-07-27 2018-03-27 中国科学院理化技术研究所 一种跨尺度结构协同工作的无掩模光刻系统
US10522472B2 (en) 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
US10418324B2 (en) * 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
CN106950801A (zh) * 2017-04-16 2017-07-14 合肥芯碁微电子装备有限公司 一种无掩膜激光直写光刻设备的快速边缘曝光方法
US10747128B2 (en) * 2017-11-15 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Exposure method and exposure apparatus
JP7547081B2 (ja) * 2020-05-21 2024-09-09 キヤノン株式会社 インプリント方法及び物品の製造方法
TWI792281B (zh) * 2020-05-22 2023-02-11 台灣積體電路製造股份有限公司 半導體光刻技術及/或方法

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JP3383169B2 (ja) 1996-10-28 2003-03-04 大日本スクリーン製造株式会社 周辺露光装置
JP2001237167A (ja) 2000-02-23 2001-08-31 Nikon Corp 露光方法及びデバイス製造方法
JP2002164280A (ja) 2000-09-14 2002-06-07 Sony Corp 露光方法
TW550635B (en) * 2001-03-09 2003-09-01 Toshiba Corp Manufacturing system of electronic devices
TW497138B (en) * 2001-08-28 2002-08-01 Winbond Electronics Corp Method for improving consistency of critical dimension
US6894762B1 (en) * 2002-09-17 2005-05-17 Lsi Logic Corporation Dual source lithography for direct write application
AU2003302831A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
JP4701606B2 (ja) 2002-12-10 2011-06-15 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
KR100958702B1 (ko) 2003-03-24 2010-05-18 삼성전자주식회사 반도체 웨이퍼의 가장자리 칩들에 기인하는 결함들을제거하기 위한 반도체 공정
US7063920B2 (en) 2003-05-16 2006-06-20 Asml Holding, N.V. Method for the generation of variable pitch nested lines and/or contact holes using fixed size pixels for direct-write lithographic systems
EP1491955A1 (fr) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Appareil lithographique et méthode de fabrication d'un dispositif
US20050088633A1 (en) 2003-10-24 2005-04-28 Intel Corporation Composite optical lithography method for patterning lines of unequal width
JP2005202311A (ja) 2004-01-19 2005-07-28 Kumamoto Univ パターン転写方法
US7164465B2 (en) * 2004-07-13 2007-01-16 Anvik Corporation Versatile maskless lithography system with multiple resolutions
US7079225B2 (en) 2004-09-14 2006-07-18 Asml Netherlands B.V Lithographic apparatus and device manufacturing method
US7528931B2 (en) * 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100585170B1 (ko) 2004-12-27 2006-06-02 삼성전자주식회사 트윈 기판 스테이지를 구비한 스캐너 장치, 이를 포함하는반도체 사진 설비 및 상기 설비를 이용한 반도체 소자의제조방법
US7751030B2 (en) * 2005-02-01 2010-07-06 Asml Holding N.V. Interferometric lithographic projection apparatus
JP5622068B2 (ja) 2005-11-15 2014-11-12 株式会社ニコン 面位置検出装置、露光装置、およびデバイスの製造方法
JP2007165869A (ja) 2005-11-21 2007-06-28 Nikon Corp 露光方法及びそれを用いたデバイス製造方法、露光装置、並びに基板処理方法及び装置
US7803516B2 (en) 2005-11-21 2010-09-28 Nikon Corporation Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
JP4928979B2 (ja) 2007-02-23 2012-05-09 株式会社東芝 露光装置およびリソグラフィシステム

Also Published As

Publication number Publication date
KR20090017982A (ko) 2009-02-19
JP2009060099A (ja) 2009-03-19
EP2028547A1 (fr) 2009-02-25
TW200912559A (en) 2009-03-16
CN101369102A (zh) 2009-02-18
US20090047604A1 (en) 2009-02-19
US8896809B2 (en) 2014-11-25
KR100986791B1 (ko) 2010-10-08
CN101369102B (zh) 2012-05-23

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