SG136116A1 - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method

Info

Publication number
SG136116A1
SG136116A1 SG200702516-6A SG2007025166A SG136116A1 SG 136116 A1 SG136116 A1 SG 136116A1 SG 2007025166 A SG2007025166 A SG 2007025166A SG 136116 A1 SG136116 A1 SG 136116A1
Authority
SG
Singapore
Prior art keywords
device manufacturing
lithographic apparatus
lithographic
manufacturing
Prior art date
Application number
SG200702516-6A
Other languages
English (en)
Inventor
Roy Werkman
Everhardus Cornelis Mos
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG136116A1 publication Critical patent/SG136116A1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60Substrates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092Signal processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200702516-6A 2006-04-04 2007-04-04 Lithographic apparatus and device manufacturing method SG136116A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/396,912 US7415319B2 (en) 2006-04-04 2006-04-04 Lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
SG136116A1 true SG136116A1 (en) 2007-10-29

Family

ID=38185507

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200702516-6A SG136116A1 (en) 2006-04-04 2007-04-04 Lithographic apparatus and device manufacturing method

Country Status (7)

Country Link
US (1) US7415319B2 (fr)
EP (1) EP1843210A3 (fr)
JP (1) JP4703594B2 (fr)
KR (1) KR100876378B1 (fr)
CN (1) CN101059661B (fr)
SG (1) SG136116A1 (fr)
TW (1) TWI403856B (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7444196B2 (en) * 2006-04-21 2008-10-28 Timbre Technologies, Inc. Optimized characterization of wafers structures for optical metrology
US20080036984A1 (en) * 2006-08-08 2008-02-14 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7858404B2 (en) * 2007-03-14 2010-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Measurement of overlay offset in semiconductor processing
NL1036096A1 (nl) * 2007-11-06 2009-05-07 Asml Netherlands Bv Lithographic method.
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
US7783444B2 (en) * 2008-03-26 2010-08-24 Qimonda Ag Systems and methods of alternative overlay calculation
US8260449B2 (en) 2008-11-06 2012-09-04 Micron Technology, Inc. Photolithography systems and associated methods of overlay error correction
CN101788769B (zh) * 2009-01-23 2011-12-21 中芯国际集成电路制造(上海)有限公司 曝光形成半导体器件当层的方法
JP5391333B2 (ja) * 2009-06-17 2014-01-15 エーエスエムエル ネザーランズ ビー.ブイ. オーバレイ測定方法、リソグラフィ装置、検査装置、処理装置、及びリソグラフィ処理セル
KR101410846B1 (ko) * 2010-02-19 2014-06-23 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
NL2007216A (en) * 2010-09-08 2012-03-12 Asml Netherlands Bv Self-referencing interferometer, alignment system, and lithographic apparatus.
TWI539250B (zh) * 2011-03-15 2016-06-21 Orc Mfg Co Ltd A registration device and an exposure device having a registration device
NL2009345A (en) * 2011-09-28 2013-04-02 Asml Netherlands Bv Method of applying a pattern to a substrate, device manufacturing method and lithographic apparatus for use in such methods.
US9354526B2 (en) 2011-10-11 2016-05-31 Kla-Tencor Corporation Overlay and semiconductor process control using a wafer geometry metric
US9163935B2 (en) 2011-12-12 2015-10-20 Asml Netherlands B.V. Device manufacturing method and associated lithographic apparatus, inspection apparatus, and lithographic processing cell
US9543223B2 (en) 2013-01-25 2017-01-10 Qoniac Gmbh Method and apparatus for fabricating wafer by calculating process correction parameters
EP2620976B1 (fr) * 2012-01-25 2016-07-20 Qoniac GmbH Modèle de superposition pour aligner et exposer des tranches semiconducteur
US9070622B2 (en) * 2013-09-13 2015-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for similarity-based semiconductor process control
TW201520702A (zh) 2013-11-19 2015-06-01 Huang Tian Xing 對準誤差補償方法、系統,及圖案化方法
JP6291581B2 (ja) 2013-12-30 2018-03-14 エーエスエムエル ネザーランズ ビー.ブイ. メトロロジーターゲットの設計のための方法及び装置
US10139740B2 (en) * 2015-07-16 2018-11-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR102387289B1 (ko) * 2015-07-20 2022-04-14 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치를 제어하는 방법, 리소그래피 장치 및 디바이스 제조 방법
CN108369382B (zh) * 2015-10-08 2021-02-05 Asml荷兰有限公司 控制光刻设备的方法和器件制造方法、用于光刻设备的控制系统及光刻设备
TWI651596B (zh) * 2016-11-23 2019-02-21 科諾系統有限公司 曝光補償計算的方法與系統
US11061336B2 (en) 2017-04-26 2021-07-13 Asml Netherlands B.V. Device manufacturing method
EP3396457A1 (fr) * 2017-04-26 2018-10-31 ASML Netherlands B.V. Procédé de fabrication de dispositif
TWI696884B (zh) * 2017-11-01 2020-06-21 荷蘭商Asml控股公司 微影叢集及用於減輕該微影叢集中之疊對漂移或跳躍之方法
KR102074974B1 (ko) * 2018-01-23 2020-02-07 윤형열 패턴 형성 장치 및 방법
CN112041754A (zh) 2018-04-26 2020-12-04 Asml荷兰有限公司 对准方法和设备
CN114518698A (zh) * 2022-02-17 2022-05-20 长鑫存储技术有限公司 套刻误差补偿方法、系统及装置、电子设备和存储介质
CN116125765B (zh) * 2023-04-17 2023-07-04 魅杰光电科技(上海)有限公司 集成电路套刻误差评估方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5243195A (en) * 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JPH10199784A (ja) * 1997-01-06 1998-07-31 Mitsubishi Electric Corp アライメント補正方法及び半導体装置
JPH11102851A (ja) * 1997-09-26 1999-04-13 Mitsubishi Electric Corp アライメント補正方法及び半導体装置の製造方法
JPH11214287A (ja) * 1998-01-28 1999-08-06 Nikon Corp マーク検出方法、マーク検出装置、露光方法、露光装置、および、マーク検出プログラムを記録した記録媒体
JP2000081712A (ja) * 1998-09-04 2000-03-21 Mitsubishi Electric Corp アライメント補正方法、半導体装置の製造方法、アライメント補正装置および半導体装置
WO2000049367A1 (fr) * 1999-02-17 2000-08-24 Nikon Corporation Procede de detection de position et detecteur de position, procede d'exposition et appareil correspondant, dispositif et procede de fabrication de ce dispositif
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US6620563B2 (en) * 2001-03-08 2003-09-16 Motorola, Inc. Lithography method for forming semiconductor devices on a wafer utilizing atomic force microscopy
KR100431329B1 (ko) * 2001-10-11 2004-05-12 삼성전자주식회사 반도체 웨이퍼 오버레이 보정방법
US6737208B1 (en) * 2001-12-17 2004-05-18 Advanced Micro Devices, Inc. Method and apparatus for controlling photolithography overlay registration incorporating feedforward overlay information
JP3555613B2 (ja) * 2002-03-20 2004-08-18 松下電器産業株式会社 フォトリソグラフィーの露光方法
US6982793B1 (en) * 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
US6957119B2 (en) * 2002-09-09 2005-10-18 Macronix International Co., Ltd. Method for monitoring matched machine overlay
JP4272862B2 (ja) * 2002-09-20 2009-06-03 キヤノン株式会社 位置検出方法、位置検出装置及び露光装置
JP2004111866A (ja) * 2002-09-20 2004-04-08 Canon Inc 半導体装置の製造方法
EP1496397A1 (fr) 2003-07-11 2005-01-12 ASML Netherlands B.V. Procédé et système de correction anticipé de type overlay de distortion et décalage induits par un motif, et appareil de projection lithographique utilisant ces procédé et système
US7031794B2 (en) * 2003-09-26 2006-04-18 Taiwan Semiconductor Manufacturing Co. Ltd. Smart overlay control
US7565219B2 (en) * 2003-12-09 2009-07-21 Asml Netherlands B.V. Lithographic apparatus, method of determining a model parameter, device manufacturing method, and device manufactured thereby
US7226797B2 (en) * 2004-11-23 2007-06-05 Hewlett-Packard Development Company, L.P. Sensing alignment of multiple layers
US7184853B2 (en) * 2005-05-18 2007-02-27 Infineon Technologies Richmond, Lp Lithography method and system with correction of overlay offset errors caused by wafer processing

Also Published As

Publication number Publication date
EP1843210A2 (fr) 2007-10-10
JP2007281456A (ja) 2007-10-25
CN101059661A (zh) 2007-10-24
KR100876378B1 (ko) 2008-12-29
EP1843210A3 (fr) 2007-11-28
TWI403856B (zh) 2013-08-01
TW200801837A (en) 2008-01-01
US7415319B2 (en) 2008-08-19
US20070233305A1 (en) 2007-10-04
KR20070099475A (ko) 2007-10-09
JP4703594B2 (ja) 2011-06-15
CN101059661B (zh) 2010-09-29

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