SG134792G - Method of forming a dielectric film and semi conductor device including said film - Google Patents

Method of forming a dielectric film and semi conductor device including said film

Info

Publication number
SG134792G
SG134792G SG1347/92A SG134792A SG134792G SG 134792 G SG134792 G SG 134792G SG 1347/92 A SG1347/92 A SG 1347/92A SG 134792 A SG134792 A SG 134792A SG 134792 G SG134792 G SG 134792G
Authority
SG
Singapore
Prior art keywords
film
forming
device including
conductor device
semi conductor
Prior art date
Application number
SG1347/92A
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SG134792G publication Critical patent/SG134792G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/027—Graded interfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
SG1347/92A 1985-08-27 1992-12-30 Method of forming a dielectric film and semi conductor device including said film SG134792G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76997585A 1985-08-27 1985-08-27

Publications (1)

Publication Number Publication Date
SG134792G true SG134792G (en) 1993-03-12

Family

ID=25087086

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1347/92A SG134792G (en) 1985-08-27 1992-12-30 Method of forming a dielectric film and semi conductor device including said film

Country Status (5)

Country Link
JP (1) JPS6358843A (en)
KR (1) KR940005290B1 (en)
DE (1) DE3628399A1 (en)
GB (1) GB2179679B (en)
SG (1) SG134792G (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310610A (en) * 1988-05-07 1994-05-10 Sharp Kabushiki Kaisha Silicon micro sensor and manufacturing method therefor
JPH0748564B2 (en) * 1988-05-07 1995-05-24 シャープ株式会社 Silicon micro sensor
US5387530A (en) * 1993-06-29 1995-02-07 Digital Equipment Corporation Threshold optimization for soi transistors through use of negative charge in the gate oxide
KR20010005788A (en) * 1997-03-28 2001-01-15 미가쿠 다카하시 Method for manufacturing magnetoresistance element
KR100480756B1 (en) * 2002-08-02 2005-04-06 한국화학연구원 Process for preparing aluminum oxide thin film

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge
GB1204544A (en) * 1966-09-02 1970-09-09 Hitachi Ltd Semiconductor device and method of manufacturing the same
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
JPS523782B2 (en) * 1972-12-19 1977-01-29
DE2452289A1 (en) * 1974-11-04 1976-05-06 Siemens Ag SEMICONDUCTOR COMPONENT
JPS5527644A (en) * 1978-08-17 1980-02-27 Nec Corp Multi-layer wiring type semiconductor device
JPS5572043A (en) * 1978-11-27 1980-05-30 Fujitsu Ltd Preparation of semiconductor device
DE3122382A1 (en) * 1981-06-05 1982-12-23 Ibm Deutschland METHOD FOR PRODUCING A GATE INSULATION LAYER STRUCTURE AND USE OF SUCH A STRUCTURE

Also Published As

Publication number Publication date
GB8620609D0 (en) 1986-10-01
KR940005290B1 (en) 1994-06-15
GB2179679B (en) 1990-01-04
JPS6358843A (en) 1988-03-14
DE3628399A1 (en) 1987-03-05
KR870002638A (en) 1987-04-06
GB2179679A (en) 1987-03-11

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