GB2179679B - Method of forming a dielectric film and semiconductor device including said film - Google Patents

Method of forming a dielectric film and semiconductor device including said film

Info

Publication number
GB2179679B
GB2179679B GB8620609A GB8620609A GB2179679B GB 2179679 B GB2179679 B GB 2179679B GB 8620609 A GB8620609 A GB 8620609A GB 8620609 A GB8620609 A GB 8620609A GB 2179679 B GB2179679 B GB 2179679B
Authority
GB
United Kingdom
Prior art keywords
film
forming
semiconductor device
device including
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8620609A
Other versions
GB2179679A (en
GB8620609D0 (en
Inventor
Grzegorz Kaganowicz
John Walter Robinson
Alfred Charles Ipri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB8620609D0 publication Critical patent/GB8620609D0/en
Publication of GB2179679A publication Critical patent/GB2179679A/en
Application granted granted Critical
Publication of GB2179679B publication Critical patent/GB2179679B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/027—Graded interfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
GB8620609A 1985-08-27 1986-08-26 Method of forming a dielectric film and semiconductor device including said film Expired - Fee Related GB2179679B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76997585A 1985-08-27 1985-08-27

Publications (3)

Publication Number Publication Date
GB8620609D0 GB8620609D0 (en) 1986-10-01
GB2179679A GB2179679A (en) 1987-03-11
GB2179679B true GB2179679B (en) 1990-01-04

Family

ID=25087086

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8620609A Expired - Fee Related GB2179679B (en) 1985-08-27 1986-08-26 Method of forming a dielectric film and semiconductor device including said film

Country Status (5)

Country Link
JP (1) JPS6358843A (en)
KR (1) KR940005290B1 (en)
DE (1) DE3628399A1 (en)
GB (1) GB2179679B (en)
SG (1) SG134792G (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310610A (en) * 1988-05-07 1994-05-10 Sharp Kabushiki Kaisha Silicon micro sensor and manufacturing method therefor
JPH0748564B2 (en) * 1988-05-07 1995-05-24 シャープ株式会社 Silicon micro sensor
US5387530A (en) * 1993-06-29 1995-02-07 Digital Equipment Corporation Threshold optimization for soi transistors through use of negative charge in the gate oxide
EP0971380A4 (en) * 1997-03-28 2000-06-28 Migaku Takahashi Method for manufacturing magnetoresistance element
KR100480756B1 (en) * 2002-08-02 2005-04-06 한국화학연구원 Process for preparing aluminum oxide thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1204544A (en) * 1966-09-02 1970-09-09 Hitachi Ltd Semiconductor device and method of manufacturing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
JPS523782B2 (en) * 1972-12-19 1977-01-29
DE2452289A1 (en) * 1974-11-04 1976-05-06 Siemens Ag SEMICONDUCTOR COMPONENT
JPS5527644A (en) * 1978-08-17 1980-02-27 Nec Corp Multi-layer wiring type semiconductor device
JPS5572043A (en) * 1978-11-27 1980-05-30 Fujitsu Ltd Preparation of semiconductor device
DE3122382A1 (en) * 1981-06-05 1982-12-23 Ibm Deutschland METHOD FOR PRODUCING A GATE INSULATION LAYER STRUCTURE AND USE OF SUCH A STRUCTURE

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1204544A (en) * 1966-09-02 1970-09-09 Hitachi Ltd Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
KR940005290B1 (en) 1994-06-15
JPS6358843A (en) 1988-03-14
DE3628399A1 (en) 1987-03-05
GB2179679A (en) 1987-03-11
GB8620609D0 (en) 1986-10-01
SG134792G (en) 1993-03-12
KR870002638A (en) 1987-04-06

Similar Documents

Publication Publication Date Title
DE3378869D1 (en) A method of forming electrodes and wiring strips on a semiconductor device
GB2185351B (en) Method of semiconductor device manufacture
DE3270703D1 (en) Field effect semiconductor device and method of manufacturing such a device
EP0193117A3 (en) Method of manufacturing semiconductor device
EP0211634A3 (en) Method and apparatus for manufacturing semiconductor devices
EP0208494A3 (en) Method of fabricating a semiconductor apparatus comprising two semiconductor devices
GB2173822B (en) Thin film forming apparatus and method
GB2115607B (en) Semiconductor device and a method of producing the same
EP0193841A3 (en) Semiconductor device and method of manufacturing the same
EP0239958A3 (en) Thin film semiconductor device and method of manufacturing the same
EP0224360A3 (en) Semiconductor device manufacturing method and system
EP0331467A3 (en) Method of forming semiconductor thin film
JPS57162363A (en) Semiconductor device and method of producing same
DE3479548D1 (en) Semiconductor device and method of manufacture thereof
EP0214690A3 (en) A method of manufacturing a semiconductor device
HK40790A (en) Semiconductor device and method of producing such a device
EP0187421A3 (en) Method of manufacturing a semiconductor device
EP0585125A3 (en) A thin film semiconductor device and method of manufacture
EP0212098A3 (en) Method of forming a passivation film
GB2181893B (en) Semiconductor device and method of manufacturing thereof
DE3068271D1 (en) A semiconductor device and a method of manufacturing a semiconductor device
GB2191339B (en) A semiconductor laser device and a method of making same
EP0193934A3 (en) Semiconductor integreated circuit device and method of manufacturing the same
HK120493A (en) A production method of superconductive thin film and a device thereof
DE3665963D1 (en) Photosensitive semiconductor device and its production method

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940826