SG133490A1 - Target arrangement for mounting/dismounting and method of manufacturing - Google Patents

Target arrangement for mounting/dismounting and method of manufacturing

Info

Publication number
SG133490A1
SG133490A1 SG200608014-7A SG2006080147A SG133490A1 SG 133490 A1 SG133490 A1 SG 133490A1 SG 2006080147 A SG2006080147 A SG 2006080147A SG 133490 A1 SG133490 A1 SG 133490A1
Authority
SG
Singapore
Prior art keywords
target arrangement
plane
dismounting
mounting
manufacturing
Prior art date
Application number
SG200608014-7A
Other languages
English (en)
Inventor
Murcel Neusch
Peter Schlegel
Hartmut Rohrmann
Oliver Rattunde
Original Assignee
Oc Oerlikon Balzers Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oc Oerlikon Balzers Ag filed Critical Oc Oerlikon Balzers Ag
Publication of SG133490A1 publication Critical patent/SG133490A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)
SG200608014-7A 2005-12-23 2006-11-22 Target arrangement for mounting/dismounting and method of manufacturing SG133490A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05028296A EP1801846B1 (en) 2005-12-23 2005-12-23 Target arrangement for mounting/dismouting and method of manufacturing

Publications (1)

Publication Number Publication Date
SG133490A1 true SG133490A1 (en) 2007-07-30

Family

ID=36177741

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200608014-7A SG133490A1 (en) 2005-12-23 2006-11-22 Target arrangement for mounting/dismounting and method of manufacturing

Country Status (7)

Country Link
US (1) US8540850B2 (ja)
EP (1) EP1801846B1 (ja)
JP (1) JP4943829B2 (ja)
KR (1) KR20070066982A (ja)
AT (1) ATE436087T1 (ja)
DE (1) DE602005015348D1 (ja)
SG (1) SG133490A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101046520B1 (ko) 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2602807B2 (ja) * 1985-09-27 1997-04-23 株式会社島津製作所 スパツタ用ターゲツトアセンブリ
JPH06136533A (ja) * 1992-10-16 1994-05-17 Toyo Ink Mfg Co Ltd スハ゜ッタリンク゛ターケ゛ット
US5529673A (en) 1995-02-17 1996-06-25 Sony Corporation Mechanically joined sputtering target and adapter therefor
DE19508406A1 (de) 1995-03-09 1996-09-12 Leybold Ag Kathodenanordnung für eine Vorrichtung zum Zerstäuben eines Target-Paares
US5512150A (en) * 1995-03-09 1996-04-30 Hmt Technology Corporation Target assembly having inner and outer targets
US5626226A (en) * 1995-08-09 1997-05-06 Imperial Schrade Corp. Tamper-resistant, point-of-sale, article display package
US5674367A (en) 1995-12-22 1997-10-07 Sony Corporation Sputtering target having a shrink fit mounting ring
US6068742A (en) * 1996-07-22 2000-05-30 Balzers Aktiengesellschaft Target arrangement with a circular plate, magnetron for mounting the target arrangement, and process for coating a series of circular disc-shaped workpieces by means of said magnetron source
JP2000514872A (ja) * 1996-07-22 2000-11-07 バルツェルス・アクチェンゲゼルシャフト 円形状のプレートを備えたターゲット構造
DE60236264D1 (de) * 2001-04-24 2010-06-17 Tosoh Smd Inc Verfahren zur optimierung des targetprofils
US6743340B2 (en) 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor

Also Published As

Publication number Publication date
JP2007173237A (ja) 2007-07-05
US20070144899A1 (en) 2007-06-28
EP1801846B1 (en) 2009-07-08
DE602005015348D1 (de) 2009-08-20
KR20070066982A (ko) 2007-06-27
JP4943829B2 (ja) 2012-05-30
ATE436087T1 (de) 2009-07-15
EP1801846A1 (en) 2007-06-27
US8540850B2 (en) 2013-09-24

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