SG132652A1 - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method

Info

Publication number
SG132652A1
SG132652A1 SG200608255-6A SG2006082556A SG132652A1 SG 132652 A1 SG132652 A1 SG 132652A1 SG 2006082556 A SG2006082556 A SG 2006082556A SG 132652 A1 SG132652 A1 SG 132652A1
Authority
SG
Singapore
Prior art keywords
lithographic apparatus
device manufacturing
image
metric
calculating
Prior art date
Application number
SG200608255-6A
Other languages
English (en)
Inventor
Alek Chi-Heng Chen
Steven George Hansen
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG132652A1 publication Critical patent/SG132652A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200608255-6A 2005-11-30 2006-11-28 Lithographic apparatus and device manufacturing method SG132652A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/289,626 US20070121090A1 (en) 2005-11-30 2005-11-30 Lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
SG132652A1 true SG132652A1 (en) 2007-06-28

Family

ID=37943772

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200608255-6A SG132652A1 (en) 2005-11-30 2006-11-28 Lithographic apparatus and device manufacturing method

Country Status (7)

Country Link
US (1) US20070121090A1 (ko)
EP (1) EP1793279A3 (ko)
JP (1) JP2007158328A (ko)
KR (2) KR100825454B1 (ko)
CN (1) CN1975582A (ko)
SG (1) SG132652A1 (ko)
TW (1) TW200725191A (ko)

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US7965373B2 (en) * 2005-06-28 2011-06-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing a datapath having a balanced calculation load
US7999920B2 (en) 2007-08-22 2011-08-16 Asml Netherlands B.V. Method of performing model-based scanner tuning
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US20090191468A1 (en) * 2008-01-29 2009-07-30 International Business Machines Corporation Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features
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US8542340B2 (en) 2008-07-07 2013-09-24 Asml Netherlands B.V. Illumination optimization
US10025198B2 (en) 2008-07-07 2018-07-17 Asml Netherlands B.V. Smart selection and/or weighting of parameters for lithographic process simulation
US7975246B2 (en) 2008-08-14 2011-07-05 International Business Machines Corporation MEEF reduction by elongation of square shapes
NL2004323A (en) * 2009-04-16 2010-10-18 Asml Netherlands Bv Device manufacturing method and lithographic apparatus.
NL2005523A (en) 2009-10-28 2011-05-02 Asml Netherlands Bv Selection of optimum patterns in a design layout based on diffraction signature analysis.
US8108805B2 (en) * 2010-03-26 2012-01-31 Tokyo Electron Limited Simplified micro-bridging and roughness analysis
CN102279516B (zh) * 2010-06-10 2012-11-07 上海华虹Nec电子有限公司 校准标准片的制备方法及用该标准片进行校准的方法
NL2007579A (en) 2010-11-10 2012-05-14 Asml Netherlands Bv Pattern-dependent proximity matching/tuning including light manipulation by projection optics.
NL2007642A (en) 2010-11-10 2012-05-14 Asml Netherlands Bv Optimization flows of source, mask and projection optics.
CN102221789B (zh) * 2011-06-17 2012-11-14 中国科学院上海光学精密机械研究所 光刻机空间像噪声评估及滤波方法
JP6232709B2 (ja) * 2012-02-15 2017-11-22 大日本印刷株式会社 位相シフトマスク及び当該位相シフトマスクを用いたレジストパターン形成方法
JP6353831B2 (ja) 2012-06-26 2018-07-04 ケーエルエー−テンカー コーポレイション 角度分解反射率測定における走査および回折の光計測からのアルゴリズム的除去
US9091650B2 (en) * 2012-11-27 2015-07-28 Kla-Tencor Corporation Apodization for pupil imaging scatterometry
US9377696B2 (en) * 2013-10-07 2016-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process and mask
US9535334B2 (en) * 2013-10-31 2017-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process to print low pattern density features
CN105301913B (zh) * 2014-06-06 2017-11-03 台湾积体电路制造股份有限公司 用两种状态的掩模提高分辨率的光刻方法和结构
US9916989B2 (en) 2016-04-15 2018-03-13 Amkor Technology, Inc. System and method for laser assisted bonding of semiconductor die
US10162257B2 (en) 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet lithography system, device, and method for printing low pattern density features
EP3336607A1 (en) * 2016-12-16 2018-06-20 ASML Netherlands B.V. Method of measuring a property of a substrate, inspection apparatus, lithographic system and device manufacturing method
DE102017208340A1 (de) * 2017-05-17 2018-11-22 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsobjektiv mit Einstellung der Pupillentransmission
US11131629B2 (en) * 2017-05-26 2021-09-28 Kla-Tencor Corporation Apparatus and methods for measuring phase and amplitude of light through a layer
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Also Published As

Publication number Publication date
KR100825454B1 (ko) 2008-04-25
KR100839972B1 (ko) 2008-06-20
TW200725191A (en) 2007-07-01
US20070121090A1 (en) 2007-05-31
CN1975582A (zh) 2007-06-06
KR20070057059A (ko) 2007-06-04
KR20080007297A (ko) 2008-01-18
EP1793279A3 (en) 2008-02-13
EP1793279A2 (en) 2007-06-06
JP2007158328A (ja) 2007-06-21

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