SG128592G - Doping for low capacitance amorphous silicon field effect transistor - Google Patents

Doping for low capacitance amorphous silicon field effect transistor

Info

Publication number
SG128592G
SG128592G SG1285/92A SG128592A SG128592G SG 128592 G SG128592 G SG 128592G SG 1285/92 A SG1285/92 A SG 1285/92A SG 128592 A SG128592 A SG 128592A SG 128592 G SG128592 G SG 128592G
Authority
SG
Singapore
Prior art keywords
doping
field effect
effect transistor
amorphous silicon
low capacitance
Prior art date
Application number
SG1285/92A
Other languages
English (en)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SG128592G publication Critical patent/SG128592G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
SG1285/92A 1985-08-02 1992-12-17 Doping for low capacitance amorphous silicon field effect transistor SG128592G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/761,981 US4704623A (en) 1985-08-02 1985-08-02 Doping for low capacitance amorphous silicon field effect transistor

Publications (1)

Publication Number Publication Date
SG128592G true SG128592G (en) 1993-04-16

Family

ID=25063793

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1285/92A SG128592G (en) 1985-08-02 1992-12-17 Doping for low capacitance amorphous silicon field effect transistor

Country Status (6)

Country Link
US (1) US4704623A (de)
EP (1) EP0211367B1 (de)
JP (1) JPH0812925B2 (de)
FR (1) FR2585883B1 (de)
HK (1) HK29093A (de)
SG (1) SG128592G (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01302769A (ja) * 1988-05-30 1989-12-06 Seikosha Co Ltd 逆スタガー型シリコン薄膜トランジスタの製造方法
US5289027A (en) * 1988-12-09 1994-02-22 Hughes Aircraft Company Ultrathin submicron MOSFET with intrinsic channel
US4998146A (en) * 1989-05-24 1991-03-05 Xerox Corporation High voltage thin film transistor
US6018181A (en) * 1990-10-12 2000-01-25 Mitsubishi Denki Kabushiki Kaisha Thin film transistor and manufacturing method thereof
TW384515B (en) * 1993-07-14 2000-03-11 Frontec Inc Electronic device and its manufacturing method
JP3765337B2 (ja) * 1996-10-25 2006-04-12 株式会社東芝 Ｍａｃのバンクレジスタ回路
TW437097B (en) * 1999-12-20 2001-05-28 Hannstar Display Corp Manufacturing method for thin film transistor
WO2002050917A1 (en) * 2000-12-21 2002-06-27 Koninklijke Philips Electronics N.V. Thin film transistors
KR102110226B1 (ko) * 2013-09-11 2020-05-14 삼성디스플레이 주식회사 표시패널 및 그 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597001A (en) * 1984-10-05 1986-06-24 General Electric Company Thin film field-effect transistors with tolerance to electrode misalignment

Also Published As

Publication number Publication date
EP0211367B1 (de) 1991-11-06
JPS6273671A (ja) 1987-04-04
US4704623A (en) 1987-11-03
HK29093A (en) 1993-04-02
EP0211367A3 (en) 1987-12-02
EP0211367A2 (de) 1987-02-25
FR2585883A1 (fr) 1987-02-06
JPH0812925B2 (ja) 1996-02-07
FR2585883B1 (fr) 1989-03-03

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