SG128552A1 - Methods and system for inhibiting immersion lithography defect formation - Google Patents

Methods and system for inhibiting immersion lithography defect formation

Info

Publication number
SG128552A1
SG128552A1 SG200602938A SG200602938A SG128552A1 SG 128552 A1 SG128552 A1 SG 128552A1 SG 200602938 A SG200602938 A SG 200602938A SG 200602938 A SG200602938 A SG 200602938A SG 128552 A1 SG128552 A1 SG 128552A1
Authority
SG
Singapore
Prior art keywords
immersion fluid
methods
immersion lithography
holder
defect formation
Prior art date
Application number
SG200602938A
Other languages
English (en)
Inventor
Ching-Yu Chang
Burn Jeng Lin
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG128552A1 publication Critical patent/SG128552A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG200602938A 2005-06-30 2006-05-02 Methods and system for inhibiting immersion lithography defect formation SG128552A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69582505P 2005-06-30 2005-06-30
US11/280,162 US20070004182A1 (en) 2005-06-30 2005-11-16 Methods and system for inhibiting immersion lithography defect formation

Publications (1)

Publication Number Publication Date
SG128552A1 true SG128552A1 (en) 2007-01-30

Family

ID=37590153

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200602938A SG128552A1 (en) 2005-06-30 2006-05-02 Methods and system for inhibiting immersion lithography defect formation

Country Status (9)

Country Link
US (1) US20070004182A1 (nl)
JP (1) JP2007013161A (nl)
KR (1) KR100801161B1 (nl)
CN (1) CN102331686A (nl)
DE (1) DE102006029720A1 (nl)
FR (1) FR2891065B1 (nl)
IL (1) IL176566A0 (nl)
NL (1) NL1032092C2 (nl)
SG (1) SG128552A1 (nl)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007235112A (ja) * 2006-02-02 2007-09-13 Canon Inc 露光装置及びデバイス製造方法
EP2535744A3 (en) * 2006-04-03 2013-10-09 Nikon Corporation Incidence surfaces and optical windows that are solvophobic to immersion liquids used in an immersion microlithography system
US7903232B2 (en) * 2006-04-12 2011-03-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101240775B1 (ko) * 2006-09-12 2013-03-07 칼 짜이스 에스엠테 게엠베하 소수성 코팅을 갖는 액침 리소그래피용 광학 장치 및 이를 포함하는 투영 노광 장치
WO2008108253A2 (en) * 2007-02-23 2008-09-12 Nikon Corporation Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure
US7900641B2 (en) * 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7561250B2 (en) * 2007-06-19 2009-07-14 Asml Netherlands B.V. Lithographic apparatus having parts with a coated film adhered thereto
US20090014030A1 (en) * 2007-07-09 2009-01-15 Asml Netherlands B.V. Substrates and methods of using those substrates
US7916269B2 (en) * 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
US20090025753A1 (en) * 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
NL1035757A1 (nl) * 2007-08-02 2009-02-03 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US9418904B2 (en) 2011-11-14 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Localized CMP to improve wafer planarization
US10065288B2 (en) 2012-02-14 2018-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing (CMP) platform for local profile control
CN110597021B (zh) * 2019-09-20 2021-04-23 上海华力微电子有限公司 浸没式光刻工艺中晶圆表面残水缺陷的改善方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
AU2001247478A1 (en) * 2000-03-16 2001-09-24 Sri International Microlaboratory devices and methods
US6867884B1 (en) * 2000-07-07 2005-03-15 Kodak Polychrome Graphics, Llc Halftone dot placement for multi-color images
JP3886712B2 (ja) * 2000-09-08 2007-02-28 シャープ株式会社 半導体装置の製造方法
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
WO2004050266A1 (ja) * 2002-12-03 2004-06-17 Nikon Corporation 汚染物質除去方法及び装置、並びに露光方法及び装置
JP4595320B2 (ja) * 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
CN1723539B (zh) * 2002-12-10 2010-05-26 株式会社尼康 曝光装置和曝光方法以及器件制造方法
EP1491956B1 (en) * 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
US7061578B2 (en) * 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
SG2014014955A (en) * 2003-12-03 2014-07-30 Nippon Kogaku Kk Exposure apparatus, exposure method, method for producing device, and optical part
KR101499405B1 (ko) * 2003-12-15 2015-03-05 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
US20050208539A1 (en) * 2003-12-31 2005-09-22 Vann Charles S Quantitative amplification and detection of small numbers of target polynucleotides
US7145641B2 (en) * 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
DE102004018659A1 (de) * 2004-04-13 2005-11-03 Carl Zeiss Smt Ag Abschlussmodul für eine optische Anordnung
US20050260503A1 (en) * 2004-05-20 2005-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Reticle film stabilizing method
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) * 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7903233B2 (en) * 2005-01-21 2011-03-08 Nikon Corporation Offset partial ring seal in immersion lithographic system
US7317507B2 (en) * 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI439813B (zh) * 2006-05-10 2014-06-01 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element

Also Published As

Publication number Publication date
US20070004182A1 (en) 2007-01-04
DE102006029720A1 (de) 2007-06-06
KR20070003689A (ko) 2007-01-05
JP2007013161A (ja) 2007-01-18
FR2891065A1 (fr) 2007-03-23
NL1032092A1 (nl) 2007-01-04
CN102331686A (zh) 2012-01-25
IL176566A0 (en) 2006-10-31
FR2891065B1 (fr) 2014-05-02
NL1032092C2 (nl) 2007-10-25
KR100801161B1 (ko) 2008-02-11

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