SG121937A1 - Anti-reflective sidewall coated alternating phase shift mask and fabrication method - Google Patents

Anti-reflective sidewall coated alternating phase shift mask and fabrication method

Info

Publication number
SG121937A1
SG121937A1 SG200505529A SG200505529A SG121937A1 SG 121937 A1 SG121937 A1 SG 121937A1 SG 200505529 A SG200505529 A SG 200505529A SG 200505529 A SG200505529 A SG 200505529A SG 121937 A1 SG121937 A1 SG 121937A1
Authority
SG
Singapore
Prior art keywords
phase shift
fabrication method
shift mask
alternating phase
reflective sidewall
Prior art date
Application number
SG200505529A
Other languages
English (en)
Inventor
Tan Sia Kim
Lin Qunying
Hsia Liang-Choo
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Publication of SG121937A1 publication Critical patent/SG121937A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG200505529A 2004-10-25 2005-08-26 Anti-reflective sidewall coated alternating phase shift mask and fabrication method SG121937A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/973,526 US7384714B2 (en) 2004-10-25 2004-10-25 Anti-reflective sidewall coated alternating phase shift mask and fabrication method

Publications (1)

Publication Number Publication Date
SG121937A1 true SG121937A1 (en) 2006-05-26

Family

ID=36206554

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200505529A SG121937A1 (en) 2004-10-25 2005-08-26 Anti-reflective sidewall coated alternating phase shift mask and fabrication method

Country Status (3)

Country Link
US (1) US7384714B2 (https=)
JP (1) JP2006119651A (https=)
SG (1) SG121937A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7674562B2 (en) * 2005-12-07 2010-03-09 Chartered Semiconductor Manufacturing, Ltd. Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask
US20080261120A1 (en) * 2007-04-20 2008-10-23 Jeffrey Peter Gambino Photolithography mask with integrally formed protective capping layer
US20080261121A1 (en) * 2007-04-20 2008-10-23 Jeffrey Peter Gambino Photolithography mask with protective silicide capping layer
US20080261122A1 (en) * 2007-04-20 2008-10-23 Jeffrey Peter Gambino Photolithography mask with protective capping layer
JP2008299159A (ja) * 2007-06-01 2008-12-11 Nec Electronics Corp レベンソンマスク及びレベンソンマスクの製造方法
US20080311485A1 (en) * 2007-06-12 2008-12-18 William Stanton Photomasks Used to Fabricate Integrated Circuitry, Finished-Construction Binary Photomasks Used to Fabricate Integrated Circuitry, Methods of Forming Photomasks, and Methods of Photolithographically Patterning Substrates
US20090226823A1 (en) * 2008-03-06 2009-09-10 Micron Technology, Inc. Reticles including assistant structures, methods of forming such reticles, and methods of utilizing such reticles
EP2562599B1 (en) 2009-01-29 2014-12-10 Digiflex Ltd. Process for producing a photomask on a photopolymeric surface
US8586403B2 (en) * 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US8846273B2 (en) 2012-06-04 2014-09-30 Micron Technology, Inc. Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate
CN108650794B (zh) * 2018-06-04 2023-01-17 上海量子绘景电子股份有限公司 一种线路板的制备方法
CN112099308B (zh) * 2020-10-22 2025-04-11 泉芯集成电路制造(济南)有限公司 衰减相移掩模版及其制程方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411824A (en) * 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
AU5681194A (en) * 1993-01-21 1994-08-15 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
US5418095A (en) * 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
JP3750312B2 (ja) * 1997-10-20 2006-03-01 ソニー株式会社 位相シフトマスク及び位相シフトマスクの製造方法
JP2002289592A (ja) * 2001-03-28 2002-10-04 Sony Corp 半導体装置の製造方法
JP2003043662A (ja) * 2001-08-01 2003-02-13 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク
US6824932B2 (en) * 2002-06-05 2004-11-30 International Business Machines Corporation Self-aligned alternating phase shift mask patterning process

Also Published As

Publication number Publication date
US7384714B2 (en) 2008-06-10
JP2006119651A (ja) 2006-05-11
US20060088771A1 (en) 2006-04-27

Similar Documents

Publication Publication Date Title
PL1841579T3 (pl) Sposób do formowania i powlekania podłoża
TWI348590B (en) Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
GB2418330B (en) Platform for intelligent Email distribution
GB0508660D0 (en) Advanced pattern definition for particle-beam exposure
IL183814A0 (en) Reduction of etch mask feature critical dimensions
EP1472574A4 (en) ANTI-REFLECTIVE COATINGS DESIGNED TO BE INSTALLED BY ROTATION FOR PHOTOLITHOGRAPHY
SG121937A1 (en) Anti-reflective sidewall coated alternating phase shift mask and fabrication method
GB2401563B (en) Method for forming plural-layered coated film
TWI372312B (en) Method for forming anti-reflective coating
SG118403A1 (en) Wafer dividing method
ZA200702883B (en) Method for coating powders
GB0400982D0 (en) Method of forming a pattern on a substrate
WO2006040079A8 (de) Beschichtungsverfahren
GB0312668D0 (en) Method for forming pattern of stacked film
AU2003263955A8 (en) Photosensitive bottom anti-reflective coatings
TWI340302B (en) Lithographic rinse solution and resist-pattern forming method
GB2411290B (en) Wafer stage
GB0424005D0 (en) Method of coating
IL164372A0 (en) New film coating
ZA200606184B (en) Coated abrasives
GB0401622D0 (en) Plasma etching process
EP1827711A4 (en) TILE LINING AND ASSOCIATED METHOD
TWI341558B (en) Coating film forming method
GB2404786B (en) Etching films
GB0318754D0 (en) Coating method