SG11202103906RA - Acoustic wave devices - Google Patents
Acoustic wave devicesInfo
- Publication number
- SG11202103906RA SG11202103906RA SG11202103906RA SG11202103906RA SG11202103906RA SG 11202103906R A SG11202103906R A SG 11202103906RA SG 11202103906R A SG11202103906R A SG 11202103906RA SG 11202103906R A SG11202103906R A SG 11202103906RA SG 11202103906R A SG11202103906R A SG 11202103906RA
- Authority
- SG
- Singapore
- Prior art keywords
- acoustic wave
- wave devices
- devices
- acoustic
- wave
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Planar Illumination Modules (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862746512P | 2018-10-16 | 2018-10-16 | |
| PCT/US2019/056348 WO2020081573A2 (en) | 2018-10-16 | 2019-10-15 | Acoustic wave devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202103906RA true SG11202103906RA (en) | 2021-05-28 |
Family
ID=70159235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202103906RA SG11202103906RA (en) | 2018-10-16 | 2019-10-15 | Acoustic wave devices |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20200119710A1 (en) |
| JP (1) | JP2022512700A (en) |
| KR (1) | KR20210068131A (en) |
| CN (1) | CN113424443A (en) |
| DE (1) | DE112019005176T5 (en) |
| GB (2) | GB2592810B (en) |
| SG (1) | SG11202103906RA (en) |
| TW (1) | TW202029643A (en) |
| WO (1) | WO2020081573A2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG10201905013VA (en) | 2018-06-11 | 2020-01-30 | Skyworks Solutions Inc | Acoustic wave device with spinel layer |
| US20200119710A1 (en) * | 2018-10-16 | 2020-04-16 | Tohoku University | Acoustic wave devices |
| US11621690B2 (en) | 2019-02-26 | 2023-04-04 | Skyworks Solutions, Inc. | Method of manufacturing acoustic wave device with multi-layer substrate including ceramic |
| US11626855B2 (en) * | 2019-11-08 | 2023-04-11 | Skyworks Solutions, Inc. | Out-of-band rejection using SAW-based integrated balun |
| WO2022264933A1 (en) * | 2021-06-16 | 2022-12-22 | 株式会社村田製作所 | Elastic wave device |
| WO2022269721A1 (en) * | 2021-06-21 | 2022-12-29 | 国立大学法人東北大学 | Surface acoustic wave device |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4705979A (en) * | 1985-06-26 | 1987-11-10 | Schlumberger Technology Corporation | Stress and temperature compensated surface acoustic wave devices |
| US4670681A (en) * | 1986-07-29 | 1987-06-02 | R. F. Monolithics, Inc. | Singly rotated orientation of quartz crystals for novel surface acoustic wave devices |
| US5719538A (en) * | 1995-09-01 | 1998-02-17 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device having negative temperature coefficient of decay |
| JPH09214282A (en) * | 1996-01-31 | 1997-08-15 | Kyocera Corp | Surface mount type surface elastic wave device |
| JP2001332958A (en) * | 2000-05-22 | 2001-11-30 | Seiko Epson Corp | Surface wave resonator and manufacturing method therefor |
| JP4003434B2 (en) * | 2001-10-31 | 2007-11-07 | 株式会社村田製作所 | Surface wave device |
| JP4587732B2 (en) * | 2004-07-28 | 2010-11-24 | 京セラ株式会社 | Surface acoustic wave device |
| JP2006246050A (en) * | 2005-03-03 | 2006-09-14 | Tdk Corp | Composite piezoelectric wafer and surface acoustic wave device |
| WO2009153757A1 (en) * | 2008-06-19 | 2009-12-23 | Nxp B.V. | Piezoelectric bimorph switch |
| WO2010067794A1 (en) * | 2008-12-10 | 2010-06-17 | 株式会社村田製作所 | Method for manufacturing piezoelectric composite substrate and method for manufacturing piezoelectric element |
| KR20110020741A (en) * | 2009-08-24 | 2011-03-03 | 엔지케이 인슐레이터 엘티디 | Method for manufacturing composite substrate |
| JP5429200B2 (en) * | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | Method for manufacturing composite piezoelectric substrate and piezoelectric device |
| EP2690782B1 (en) * | 2011-03-22 | 2020-09-09 | Murata Manufacturing Co., Ltd. | Piezoelectric device and manufacturing method for piezoelectric device |
| JP5861771B2 (en) * | 2012-03-26 | 2016-02-16 | 株式会社村田製作所 | Elastic wave device and manufacturing method thereof |
| JP6567970B2 (en) * | 2013-07-25 | 2019-08-28 | 日本碍子株式会社 | Composite substrate manufacturing method |
| US10389332B2 (en) * | 2014-12-17 | 2019-08-20 | Qorvo Us, Inc. | Plate wave devices with wave confinement structures and fabrication methods |
| US20180048283A1 (en) * | 2015-04-16 | 2018-02-15 | Shin-Etsu Chemical Co., Ltd. | Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate |
| KR102029744B1 (en) * | 2015-07-17 | 2019-10-08 | 가부시키가이샤 무라타 세이사쿠쇼 | A seismic device |
| US10381998B2 (en) * | 2015-07-28 | 2019-08-13 | Qorvo Us, Inc. | Methods for fabrication of bonded wafers and surface acoustic wave devices using same |
| US10084427B2 (en) * | 2016-01-28 | 2018-09-25 | Qorvo Us, Inc. | Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof |
| SG11201903365SA (en) * | 2016-10-20 | 2019-05-30 | Skyworks Solutions Inc | Elastic wave device with sub-wavelength thick piezoelectric layer |
| GB2572099B (en) * | 2016-11-25 | 2022-03-23 | Univ Tohoku | Acoustic wave devices |
| DE102017111448B4 (en) * | 2017-05-24 | 2022-02-10 | RF360 Europe GmbH | SAW device with suppressed spurious mode signals |
| US11206007B2 (en) * | 2017-10-23 | 2021-12-21 | Qorvo Us, Inc. | Quartz orientation for guided SAW devices |
| FR3079346B1 (en) * | 2018-03-26 | 2020-05-29 | Soitec | METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER |
| US20200119710A1 (en) * | 2018-10-16 | 2020-04-16 | Tohoku University | Acoustic wave devices |
| WO2020209190A1 (en) * | 2019-04-08 | 2020-10-15 | 株式会社村田製作所 | Elastic wave device and multiplexer |
| KR20220011693A (en) * | 2019-07-05 | 2022-01-28 | 가부시키가이샤 무라타 세이사쿠쇼 | Acoustic wave devices, high-frequency front-end circuits and communication devices |
| US20210111688A1 (en) * | 2019-10-10 | 2021-04-15 | Skyworks Solutions, Inc. | Surface acoustic wave device with multi-layer piezoelectric substrate |
-
2019
- 2019-10-15 US US16/653,964 patent/US20200119710A1/en active Pending
- 2019-10-15 GB GB2106080.1A patent/GB2592810B/en active Active
- 2019-10-15 GB GB2214625.2A patent/GB2612701B/en active Active
- 2019-10-15 WO PCT/US2019/056348 patent/WO2020081573A2/en active Application Filing
- 2019-10-15 JP JP2021520613A patent/JP2022512700A/en active Pending
- 2019-10-15 SG SG11202103906RA patent/SG11202103906RA/en unknown
- 2019-10-15 US US16/653,965 patent/US20200119711A1/en active Pending
- 2019-10-15 DE DE112019005176.8T patent/DE112019005176T5/en active Pending
- 2019-10-15 CN CN201980081234.4A patent/CN113424443A/en active Pending
- 2019-10-15 KR KR1020217014380A patent/KR20210068131A/en unknown
- 2019-10-16 TW TW108137291A patent/TW202029643A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2612701B (en) | 2023-08-02 |
| GB2612701A (en) | 2023-05-10 |
| KR20210068131A (en) | 2021-06-08 |
| GB202214625D0 (en) | 2022-11-16 |
| CN113424443A (en) | 2021-09-21 |
| JP2022512700A (en) | 2022-02-07 |
| US20200119710A1 (en) | 2020-04-16 |
| GB2592810A (en) | 2021-09-08 |
| GB2592810A8 (en) | 2023-05-31 |
| WO2020081573A3 (en) | 2020-05-22 |
| US20200119711A1 (en) | 2020-04-16 |
| GB2592810B (en) | 2023-08-09 |
| WO2020081573A2 (en) | 2020-04-23 |
| DE112019005176T5 (en) | 2021-09-23 |
| TW202029643A (en) | 2020-08-01 |
| GB202106080D0 (en) | 2021-06-09 |
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