SG11202012854SA - Low temperature high-quality dielectric films - Google Patents

Low temperature high-quality dielectric films

Info

Publication number
SG11202012854SA
SG11202012854SA SG11202012854SA SG11202012854SA SG11202012854SA SG 11202012854S A SG11202012854S A SG 11202012854SA SG 11202012854S A SG11202012854S A SG 11202012854SA SG 11202012854S A SG11202012854S A SG 11202012854SA SG 11202012854S A SG11202012854S A SG 11202012854SA
Authority
SG
Singapore
Prior art keywords
low temperature
temperature high
dielectric films
quality dielectric
quality
Prior art date
Application number
SG11202012854SA
Inventor
Eswaranand Venkatasubramanian
Samuel E Gottheim
Pramit Manna
Abhijit Basu Mallick
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202012854SA publication Critical patent/SG11202012854SA/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

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US20220115227A1 (en) * 2020-10-14 2022-04-14 Changxin Memory Technologies, Inc. Semiconductor structure preparation process and semiconductor structure
TWI742902B (en) * 2020-10-30 2021-10-11 台灣奈米碳素股份有限公司 A method for manufacturing semiconductor device by plasma-enhanced atomic layer deposition
CN116497340B (en) * 2023-06-21 2023-09-12 上海陛通半导体能源科技股份有限公司 Method for forming low-temperature silicon oxycarbide film

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KR102510966B1 (en) 2023-03-15
US20210043450A1 (en) 2021-02-11
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US10840088B2 (en) 2020-11-17

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