CN116497340B - Method for forming low-temperature silicon oxycarbide film - Google Patents

Method for forming low-temperature silicon oxycarbide film Download PDF

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CN116497340B
CN116497340B CN202310735429.4A CN202310735429A CN116497340B CN 116497340 B CN116497340 B CN 116497340B CN 202310735429 A CN202310735429 A CN 202310735429A CN 116497340 B CN116497340 B CN 116497340B
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silicon oxycarbide
low
sccm
carbon dioxide
helium
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CN116497340A (en
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王晓芳
宋维聪
周洁鹏
苗春雨
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Shanghai Betone Semiconductor Energy Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The application discloses a method for forming a low-temperature silicon oxycarbide film, which comprises the following steps: heating a vacuum reaction chamber of the PECVD equipment to 60-100 ℃, putting a substrate into the vacuum reaction chamber, then introducing silane, carbon dioxide and helium, setting the power value of a high-frequency power source to be 300-550W, setting the power value of a low-frequency power source to be 90-200W, and depositing silicon oxycarbide on the surface of the substrate. The application develops a method for preparing the silicon oxycarbide film at the low temperature of 60-100 ℃ for the first time, effectively reduces the film forming temperature, and the prepared low-temperature silicon oxycarbide film has good stability and low-temperature anti-reflection property and can meet the requirement of depositing SiO (silicon oxide) on low-temperature devices x C y Requirements.

Description

Method for forming low-temperature silicon oxycarbide film
Technical Field
The application relates to the technical field of preparation of silicon oxycarbide films, in particular to a method for forming a low-temperature silicon oxycarbide film.
Background
In the photoetching exposure process, the refractive index of the resist is not matched with that of the substrate material, reflected light generated on the surface of the substrate can interfere with incident light to form a Standing Wave (Standing Wave), and the concentration of an anti-sensitization compound (Photo Active Compound, PAC) in the resist is unevenly distributed due to the Standing Wave distribution of light intensity, so that the edge of the side wall of the developed resist has different degrees of fluctuation. SiO (SiO) x C y The phase of the refraction light and the reflection light can be adjusted, the reflection of the light source is inhibited from being too strong, the anti-reflection layer (Anti Reflective Coating, ARC) is widely used in the current process to inhibit the standing wave effect, and the PECVD is used for SiO x C y Deposition, deposition ofThe temperature is about 400 ℃.
With the increasingly advanced process requirements, with smaller line widths, advanced processes must use deep ultraviolet (Deep Ultra Violet, DUV) light with 248nm wavelength emitted by KrF laser as exposure light source, use shorter wavelength light source, and must develop new photoresist material matching to deposit nitrogen-free dielectric anti-reflective layer (NFDARC, nitrogen free dielectricanti-reflective coating) SiO on PECVD process x C y The need for low temperature film formation has arisen.
Based on this, the present application was studied.
Disclosure of Invention
In view of the shortcomings of the prior art, the application aims to provide a method for forming a low-temperature silicon oxycarbide film, which ensures that SiO x C y Film forming under the action of low temperature can meet the requirement of new photoresist materials.
In order to solve the technical problems, the application is realized by adopting the following technical scheme:
the application provides a method for forming a low-temperature silicon oxycarbide film, which comprises the following steps:
s1, after heating up a vacuum reaction chamber of PECVD equipment, residual gas in the vacuum reaction chamber is pumped away, and vacuum is kept for a certain time;
s2, introducing carbon dioxide and helium into the vacuum reaction chamber for treatment;
s3, introducing silane, carbon dioxide and helium into the vacuum reaction chamber for pretreatment;
s4, placing a substrate in the vacuum reaction chamber, then introducing silane, carbon dioxide and helium, setting the power value of a high-frequency power source to be 300-550W, setting the power value of a low-frequency power source to be 90-200W, and depositing silicon oxycarbide on the surface of the substrate;
s5, closing the carbon dioxide and the silane, and continuing to introduce helium gas to purge the chamber to obtain the low-temperature silicon oxycarbide film;
wherein, in the processing of the steps S1 to S5, the temperature of the vacuum reaction chamber is controlled to be 60-100 ℃;
in the processes of steps S2 to S5, the pressure of the vacuum reaction chamber is controlled to be 1 to 10 Torr.
Preferably, in step S4, the inflow rates of the silane, the carbon dioxide and the helium are respectively 100-500 sccm, 300-3000 sccm and 4000-20000 sccm.
Preferably, in step S4, the flow ratio of the silane to the carbon dioxide to the helium is 1:3 to 5:35 to 50.
Preferably, the flow ratio of the silane, the carbon dioxide and the helium is 1:4:40.
preferably, in step S4, the ratio of the power value of the high-frequency power source to the power value of the low-frequency power source is 5:2.
preferably, in step S1, the time for maintaining the vacuum is 8 to 13 seconds.
Preferably, in the step S2, the inflow rates of the carbon dioxide and the helium are 300-3000 sccm and 4000-20000 sccm respectively;
in the step S2, the carbon dioxide and helium are introduced for processing for 10-20 seconds.
Preferably, in the step S3, the inflow rates of the silane, the carbon dioxide and the helium are respectively 100-500 sccm, 300-3000 sccm and 4000-20000 sccm;
in the step S3, the silane, the carbon dioxide and the helium are introduced for pretreatment for 5 to 15 seconds.
Preferably, in steps S3 and S4, the method further comprises controlling the distance between the electrode plates to be 5-12 mm.
Preferably, the substrate is selected from 12 inch wafers.
Preferably, in step S5, the flow rate of helium gas is 4000-20000 sccm.
The application also provides a low-temperature silicon oxycarbide film prepared by the method.
The application also provides an application of the low-temperature silicon oxide film in preparing a photoresist material.
Compared with the prior art, the application has the following beneficial effects:
the head of the applicationThe method for preparing the silicon oxycarbide film at the low temperature of 60-100 ℃ is developed for a second time, the film forming temperature is effectively reduced, and the prepared low-temperature silicon oxycarbide film has good stability and low-temperature anti-reflection property and can meet the requirement of depositing SiO (silicon oxide) on low-temperature devices x C y
Requirements.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 shows the low temperature SiO prepared in examples 1 to 5 x C y RI and EC results for the films;
FIG. 2 shows the SiO produced in example 3 and comparative examples 1 to 3 x C y RI and EC results for the films.
Description of the embodiments
The advantages and various effects of the present application will be more clearly apparent from the following detailed description and examples. It will be understood by those skilled in the art that these specific embodiments and examples are intended to illustrate the application, not to limit the application.
Throughout the specification, unless specifically indicated otherwise, the terms used herein should be understood as meaning as commonly used in the art. Accordingly, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. In case of conflict, the present specification will control.
Unless specifically indicated otherwise, the various raw materials, reagents, instruments, equipment, and the like used in the present application are commercially available or may be prepared by existing methods.
Prior to the investigation of the present application, silicon oxycarbide (SiO x C y ) The process method of the film mainly comprises the following steps:a large amount of helium is used as carrier gas, silane and carbon dioxide react in a plasma atmosphere at a temperature of 350-400 ℃ to generate silicon oxycarbide, and the process plays an important role in the photoetching manufacturing process. The specific reaction process is as follows:
however, based on the demand of new low-temperature devices, the adoption of the aforementioned high-temperature film formation method at 350 to 400 ℃ leads to failure of the low-temperature devices, and thus the low-temperature film formation method must be developed to meet the demand of the low-temperature devices.
In order to achieve the above object, the present application provides a method of forming a low temperature silicon oxycarbide film, comprising the steps of:
s1: after heating up a vacuum reaction chamber of the PECVD equipment, residual gas in the vacuum reaction chamber is pumped away, and the vacuum is kept for a certain time; the reaction chamber is preferably an aluminum chamber, i.e. the material of the chamber wall is mainly aluminum, and the susceptor is an aluminum-containing susceptor, such as an aluminum nitride susceptor or an aluminum fluoride susceptor, or a susceptor with an aluminum nitride layer or an aluminum fluoride layer coated on the surface of the aluminum susceptor, respectively; a base made of pure aluminum nitride is preferable in this example; the temperature of the reaction chamber is raised to 60-100 ℃, and the temperature is kept unchanged in each subsequent step, so that the preparation of the low-temperature silicon oxycarbide film can be realized at the temperature; the preferable temperature range is controlled to be any value or small range of 66-85 ℃, for example, the temperature can be 66 ℃, 67 ℃, 68 ℃, 69 ℃, 70 ℃, 71 ℃, 72 ℃, 73 ℃, 74 ℃, 75 ℃, 76 ℃, 77 ℃, 78 ℃, 79 ℃, 80 ℃, 81 ℃, 82 ℃, 83 ℃, 84 ℃ or 85 ℃, and the RI, EC and fitting reflectivity results of the finally prepared low-temperature silicon oxycarbide film are not greatly influenced; residual gas in the vacuum reaction chamber is pumped away to keep the cavity clean, and the time for keeping the vacuum is 8-13 seconds;
s2: introducing carbon dioxide and helium into the vacuum reaction chamber for treatment; the inflow rates of the carbon dioxide and the helium can be set according to the needs, and the preferable inflow rates of the carbon dioxide and the helium are respectively 300-3000 sccm, 4000-20000 sccm and the treatment time is 10-20 seconds; the specific flow rate can be adjusted in the flow rate ranges, and the purposes of stabilizing the gas flow rate and pressure can be achieved by enabling the pressure of the SERVO cavity to be 1-10 Torr; in the step, the pressure of the vacuum reaction chamber is kept between 1 and 10Torr, and the pressure is kept unchanged in the subsequent steps, and the more optimal pressure can be kept at any point value or a small range of 4to 7 Torr, for example, the pressure can be 4Torr, 5 Torr, 6 Torr or 7 Torr, and the RI, EC and fitting reflectivity results of the finally prepared low-temperature silicon oxycarbide film are not greatly influenced;
s3: introducing silane, carbon dioxide and helium into the vacuum reaction chamber for pretreatment; the inflow rates of the silane, the carbon dioxide and the helium are respectively 100-500 sccm, 300-3000 sccm and 4000-20000 sccm, and the specific inflow rates can be adjusted in the above flow ranges, so long as the purpose of stabilizing the gas flow and the pressure can be achieved; the silane, the carbon dioxide and the helium are introduced for pretreatment for 5 to 15 seconds; the step continues to keep the pressure in the reaction chamber unchanged and the temperature unchanged, so that the conditions in the reaction chamber are kept constant as much as possible; the step also comprises controlling the distance between the electrode plates to be 5-12 mm;
s4, placing a substrate in the vacuum reaction chamber, then introducing silane, carbon dioxide and helium, setting the power value of a high-frequency power source to be 300-550W, setting the power value of a low-frequency power source to be 90-200W, depositing silicon oxycarbide on the surface of the substrate, wherein the specific power value can be adjusted within the power value range, for example, the power value of the high-frequency power source is 400-440W, and the power value of the low-frequency power source is 150-160W; the ratio of the power value of the better control high-frequency power source to the power value of the low-frequency power source is 5:2, obtaining a low-temperature silicon oxycarbide film with satisfactory performance; the substrate is preferably a 12-inch wafer, the inflow rates of silane, carbon dioxide and helium are respectively 100-500 sccm, 300-3000 sccm and 4000-20000 sccm, the specific inflow rates can be adjusted within the above flow ranges, for example, the inflow rates of the gases of each reaction source are controlled to be 155-275 sccm, 700-900 sccm and 7000-9000 sccm, and the inflow rate ratio of silane, carbon dioxide and helium is preferably controlled to be 1:3 to 5: 35-50, and more preferably controlling the ratio of the inlet flow to be 1:4:40, meeting the film requirement; the step continues to keep the pressure in the reaction chamber unchanged and the temperature unchanged, so that the conditions in the reaction chamber are kept constant as much as possible; the step also comprises controlling the distance between the electrode plates to be 5-12 mm; more preferably, in the steps S2-S4, the inflow rates of silane, carbon dioxide and helium are kept unchanged.
S5, closing carbon dioxide and silane, continuing to introduce helium gas to purge the chamber, and avoiding uneven outer layer of the film caused by continuous deposition of residual reaction gas, thus obtaining the low-temperature silicon oxycarbide film; the flow rate of helium is 4000-20000 sccm, and the residual reaction gas is discharged by keeping the flow rate of helium unchanged from the previous steps.
The application realizes the preparation of the silicon oxycarbide film deposited at low temperature by changing the flow ratio of the reaction source gas, adjusting the pressure and the radio frequency power based on the requirement of low-temperature deposition, and the prepared film has good uniformity, proper RI/EC ratio and fitting reflectivity lower than 0.01 percent, thereby achieving the purpose of depositing SiO by a low-temperature device x C y Requirements.
Examples
The method for forming a low-temperature silicon oxycarbide film according to the present application will be described in detail with reference to examples and experimental data.
Example 1
The embodiment provides a method for forming a low-temperature silicon oxycarbide film, which comprises the following specific steps:
1) Taking AL as a cavity wall, taking aluminum nitride ALN as a PECVD vacuum reaction chamber of a high-temperature-resistant base, and controlling the temperature to be 66-85 ℃;
2) Residual gas in the cavity is pumped away to keep the cavity clean, and vacuum is kept for about 8-13 seconds;
3) Introducing carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He) for 10-20 seconds, and stabilizing the condition that the PECVD vacuum cavity pressure is 4-7 Torr;
4) By passing Silane (SiH) 4 ) 155-200 sccm, carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He) for 5-15 seconds, and controlling the distance between electrode plates, so as to stabilize the pressure of the PECVD vacuum cavity at 4-7 Torr;
5) Then a substrate (12 inch wafer) is placed and Silane (SiH) is introduced 4 ) 155-200 sccm, carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He), and the ratio of silane, carbon dioxide and helium is 1:4.5:40 for 4-15 seconds, stabilizing the pressure of the PECVD vacuum cavity at 4-7 Torr, controlling the distance between electrode plates, setting the power value of a high-frequency power source (HF RF) at 400-440W, setting the power value of a low-frequency power source (LF RF) at 150-160W, and sending radio frequency energy to the cavity at a ratio of HF RF/LF RF of 5:2, ionizing reaction gas, and depositing to generate SiO x C y (NFDARC); the deposition time is not particularly limited, and the time can be controlled according to the film thickness, for example, in each embodiment, when the prepared film thickness is 360-480 a, the deposition time is 6 s-8 s;
6) Closing carbon dioxide and silane gas, continuously introducing 7000-9000 sccm helium gas, stabilizing the pressure of the PECVD vacuum cavity at 4-7 Torr, purging the cavity, and avoiding uneven outer layer of the film caused by continuous deposition of residual reaction gas;
7) The gaseous by-products are exhausted using an exhaust pump and returned to the base pressure.
Example 2
The embodiment provides a method for forming a low-temperature silicon oxycarbide film, which comprises the following specific steps:
1) Taking AL as a cavity wall, taking aluminum nitride ALN as a PECVD vacuum reaction chamber of a high-temperature-resistant base, and controlling the temperature to be 66-85 ℃;
2) Residual gas in the cavity is pumped away to keep the cavity clean, and vacuum is kept for about 8-13 seconds;
3) Introducing carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He) for 10-20 seconds, and stabilizing the PThe ECVD vacuum cavity pressure is 4-7 Torr;
4) By passing Silane (SiH) 4 ) 165-210 sccm, carbon dioxide (CO 2 ) 700-900 sccm, 7000-9000 sccm of helium (He) for 5-15 seconds, and controlling the distance between electrode plates, so as to stabilize the pressure of the PECVD vacuum cavity at 4-7 Torr;
5) Then a substrate (12 inch wafer) is placed and Silane (SiH) is introduced 4 ) 165-210 sccm, carbon dioxide (CO 2 ) 700-900 sccm, 7000-9000 sccm of helium (He), and the ratio of silane, carbon dioxide and helium is 1:4.25:40 for 4-15 seconds, stabilizing the pressure of the PECVD vacuum cavity at 4-7 Torr, controlling the distance between electrode plates, setting the power value of a high-frequency power source (HF RF) at 400-440W, setting the power value of a low-frequency power source (LF RF) at 150-160W, and sending radio-frequency energy to the cavity at a ratio of HF RF/LF RF of 5:2, so that the reaction gas is ionized, and generating SiO x C y (NFDARC)；
6) Closing carbon dioxide and silane gas, continuously introducing 7000-9000 sccm helium gas, stabilizing the pressure of the PECVD vacuum cavity at 4-7 Torr, purging the cavity, and avoiding uneven outer layer of the film caused by continuous deposition of residual reaction gas;
7) The gaseous by-products are exhausted using an exhaust pump and returned to the base pressure.
Example 3
The embodiment provides a method for forming a low-temperature silicon oxycarbide film, which comprises the following specific steps:
1) Taking AL as a cavity wall, taking aluminum nitride ALN as a PECVD vacuum reaction chamber of a high-temperature-resistant base, and controlling the temperature to be 66-85 ℃;
2) Residual gas in the cavity is pumped away to keep the cavity clean, and vacuum is kept for about 8-13 seconds;
3) Introducing carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He) for 10-20 seconds, and stabilizing the condition that the PECVD vacuum cavity pressure is 4-7 Torr;
4) By passing Silane (SiH) 4 ) 175-225 sccm, carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He) for 5-15 seconds, and controlling the distance between electrode plates, so as to stabilize the pressure of the PECVD vacuum cavity at 4-7 Torr;
5) Then a substrate (12 inch wafer) is placed and Silane (SiH) is introduced 4 ) 175-225 sccm, carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He), and the ratio of silane, carbon dioxide and helium is 1:4:40 for 4-15 seconds, stabilizing the pressure of the PECVD vacuum cavity at 4-7 Torr, controlling the distance between electrode plates, setting the power value of a high-frequency power source (HF RF) at 400-440W, setting the power value of a low-frequency power source (LF RF) at 150-160W, and sending radio-frequency energy to the cavity at a ratio of HF RF/LF RF of 5:2, so that the reaction gas is ionized, and generating SiO x C y (NFDARC)；
6) Closing carbon dioxide and silane gas, continuously introducing 7000-9000 sccm helium (He), stabilizing the pressure of the PECVD vacuum cavity at 4-7 Torr, purging the cavity, and avoiding uneven outer layer of the film caused by continuous deposition of residual reaction gas;
7) The gaseous by-products are exhausted using an exhaust pump and returned to the base pressure.
Example 4
The embodiment provides a method for forming a low-temperature silicon oxycarbide film, which comprises the following specific steps:
1) Taking AL as a cavity wall, taking aluminum nitride ALN as a PECVD vacuum reaction chamber of a high-temperature-resistant base, and controlling the temperature to be 66-85 ℃;
2) Residual gas in the cavity is pumped away to keep the cavity clean, and vacuum is kept for about 8-13 seconds;
3) Introducing carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He) for 10-20 seconds, and stabilizing the condition that the PECVD vacuum cavity pressure is 4-7 Torr;
4) By passing Silane (SiH) 4 ) 200-225 sccm, carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He) for 5-15 seconds, and simultaneously controlling the distance between electrode plates to stabilize the PECVD vacuum cavity pressure at 4-7Case of Torr;
5) Then a substrate (12 inch wafer) is placed and Silane (SiH) is introduced 4 ) 200-225 sccm, carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He), and the ratio of silane, carbon dioxide and helium is 1:3.5:40 for 4-15 seconds, stabilizing the pressure of the PECVD vacuum cavity at 4-7 Torr, controlling the distance between electrode plates, setting the power value of a high-frequency power source (HF RF) at 400-440W, setting the power value of a low-frequency power source (LF RF) at 150-160W, and sending radio-frequency energy to the cavity at a ratio of HF RF/LF RF of 5:2, so that the reaction gas is ionized, and generating SiO x C y (NFDARC)；
6) Closing carbon dioxide and silane gas, continuously introducing 7000-9000 sccm helium (He), stabilizing the pressure of the PECVD vacuum cavity at 4-7 Torr, purging the cavity, and avoiding uneven outer layer of the film caused by continuous deposition of residual reaction gas;
7) The gaseous by-products are exhausted using an exhaust pump and returned to the base pressure.
Example 5
The embodiment provides a method for forming a low-temperature silicon oxycarbide film, which comprises the following specific steps:
1) Taking AL as a cavity wall, taking aluminum nitride ALN as a PECVD vacuum reaction chamber of a high-temperature-resistant base, and controlling the temperature to be 66-85 ℃;
2) Residual gas in the cavity is pumped away to keep the cavity clean, and vacuum is kept for about 8-13 seconds;
3) Introducing carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He) for 10-20 seconds, and stabilizing the condition that the PECVD vacuum cavity pressure is 4-7 Torr;
4) By passing Silane (SiH) 4 ) 215-275 sccm, carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He) for 5-15 seconds, and controlling the distance between electrode plates, so as to stabilize the pressure of the PECVD vacuum cavity at 4-7 Torr;
5) Then a substrate (12 inch wafer) is placed and Silane (SiH) is introduced 4 ）215~275 sccm，Carbon dioxide (CO) 2 ) 700-900 sccm, 7000-9000 sccm of helium (He), and the ratio of silane, carbon dioxide and helium is 1:3.25:40 for 4-15 seconds, stabilizing the pressure of the PECVD vacuum cavity at 4-7 Torr, controlling the distance between electrode plates, setting the power value of a high-frequency power source (HF RF) at 400-440W, setting the power value of a low-frequency power source (LF RF) at 150-160W, and sending radio-frequency energy to the cavity at a ratio of HF RF/LF RF of 5:2, so that the reaction gas is ionized, and generating SiO x C y (NFDARC)；
6) Closing carbon dioxide and silane gas, continuously introducing 7000-9000 sccm helium (He), stabilizing the pressure of the PECVD vacuum cavity at 4-7 Torr, purging the cavity, and avoiding uneven outer layer of the film caused by continuous deposition of residual reaction gas;
7) The gaseous by-products are exhausted using an exhaust pump and returned to the base pressure.
The low temperature silicon oxycarbide films prepared by the methods of examples 1-5 were subjected to performance testing, and the deposition conditions and test results of each example are shown in table 1 below.
TABLE 1
As can be seen from the results of Table 1, siH was adjusted based on low temperature deposition, with other conditions unchanged 4 /CO 2 When the ratio of the components is 1:4.5-3.25, the RI@248nm value of the prepared low-temperature silicon oxycarbide film is 1.718-1.966, the EC@248nm value is 0.298-0.572, and the fitting reflectivity is 0.007% -0.271%. And as shown in the results of RI@248nm and EC@248nm of FIG. 1, as the silane ratio increases, RI/EC increases gradually, with a ratio of 1: when RI@248nm was reached at 4 (example 3), the fitted reflectance was 0.007%.
Comparative example 1
This comparative example provides a method for preparing silicon oxycarbide film by high temperature deposition, wherein the deposition temperature in the deposition condition of example 3 is adjusted to 400 ℃ and the ratio of gas silane/carbon dioxide/helium is adjusted to 1:12: 20. and adjusting the power value of the high-frequency power source and the power value of the low-frequency power source according to the ratio of HF RF/LF RF being 1:1.
Comparative example 2
This comparative example provides a method for preparing silicon oxycarbide films by low temperature deposition, wherein the ratio of gaseous silane/carbon dioxide/helium in the deposition conditions of example 3 is adjusted to 1, with the other preparation conditions unchanged: 12: 20. the power value of the high-frequency power source and the power value of the low-frequency power source are adjusted according to the ratio of HF RF/LF RF being 1:1.
Comparative example 3
This comparative example provides a method for preparing a silicon oxycarbide film by low temperature deposition, wherein the pressure in the deposition conditions of example 3 is adjusted to 1 Torr or less without changing other preparation conditions.
The results of the performance test of the low temperature silicon oxycarbide film prepared by the method of example 3 and the silicon oxide films prepared by comparative examples 1 to 3 are shown in Table 2 and FIG. 2. As can be seen from the results of Table 2 and FIG. 2, comparative example 1, which uses high temperature deposition at 400 ℃, has RI@248nm of 1.923 and EC@248nm of 0.559, has the disadvantage of not being applicable to low temperature devices; in comparative example 2, the deposition was directly carried out by cooling in the method of comparative example 1, wherein RI@248nm is 1.735, EC@248nm is 0.296, RI/EC is reduced, and deposition uniformity is too poor and is 5.67%; comparative example 3 deposited film RI@248nm at too low a pressure was 1.999 and EC@248nm was 0.868, both values being high.
TABLE 2
Finally, it is also noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
While preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (11)

1. A method of forming a low temperature silicon oxycarbide film, comprising the steps of:
s1, after heating up a vacuum reaction chamber of PECVD equipment, residual gas in the vacuum reaction chamber is pumped away, and vacuum is kept for a certain time;
s2, introducing carbon dioxide and helium into the vacuum reaction chamber for treatment;
s3, introducing silane, carbon dioxide and helium into the vacuum reaction chamber for pretreatment;
s4, placing a substrate in the vacuum reaction chamber, then introducing silane, carbon dioxide and helium, setting the power value of a high-frequency power source to be 300-550W, setting the power value of a low-frequency power source to be 90-200W, and depositing silicon oxycarbide on the surface of the substrate;
s5, closing the carbon dioxide and the silane, and continuing to introduce helium gas to purge the chamber to obtain the low-temperature silicon oxycarbide film;
wherein, in the processing of the steps S1 to S5, the temperature of the vacuum reaction chamber is controlled to be 60-100 ℃;
in the processing of the steps S2 to S5, the pressure of the vacuum reaction chamber is controlled to be 1 to 10 Torr;
in step S4, the flow ratio of the silane to the carbon dioxide to the helium is 1:4:40.
2. the method of forming a low temperature silicon oxycarbide film as claimed in claim 1, wherein the flow rates of the silane, carbon dioxide and helium gas in step S4 are 100 to 500 sccm, 300 to 3000 sccm, 4000 to 20000 sccm, respectively.
3. The method of forming a low-temperature silicon oxycarbide film as claimed in claim 1 wherein in step S4, the ratio of the power value of the high-frequency power source to the power value of the low-frequency power source is 5:2.
4. the method of forming a low temperature silicon oxycarbide film as claimed in claim 1 wherein the vacuum is maintained for 8 to 13 seconds in step S1.
5. The method for forming a low-temperature silicon oxycarbide film according to claim 1, wherein in step S2, the inflow rates of carbon dioxide and helium gas are 300-3000 sccm, 4000-20000 sccm, respectively;
in the step S2, the carbon dioxide and helium are introduced for processing for 10-20 seconds.
6. The method for forming a low-temperature silicon oxycarbide film as claimed in claim 1, wherein in the step S3, the flow rates of the silane, the carbon dioxide and the helium gas are respectively 100-500 sccm, 300-3000 sccm, 4000-20000 sccm;
in the step S3, the silane, the carbon dioxide and the helium are introduced for pretreatment for 5 to 15 seconds.
7. The method of forming a low temperature silicon oxycarbide film as claimed in claim 1 wherein the steps S3 and S4 further comprise controlling the distance between the electrode plates to be 5 to 12 mm.
8. The method of forming a low temperature silicon oxycarbide film of claim 1 wherein the substrate is selected from the group consisting of 12 inch wafers.
9. The method of forming a low temperature silicon oxycarbide film as claimed in claim 1 wherein the helium gas flow rate in step S5 is 4000 to 20000 sccm.
10. A low temperature silicon oxycarbide film prepared according to the method of any one of claims 1 to 9.
11. Use of the low temperature silicon oxycarbide film as claimed in claim 10 in the preparation of photoresist materials.
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284272A (en) * 1991-07-16 2001-10-12 Seiko Epson Corp Semiconductor film formation method and manufacturing method of thin-film semiconductor device
CN1739191A (en) * 2002-12-13 2006-02-22 应用材料有限公司 Nitrogen-free dielectric anti-reflective coating and hardmask
SG120976A1 (en) * 2004-02-11 2006-04-26 Taiwan Semiconductor Mfg Method for forming openings in low-k dielectric layers
JP2012180568A (en) * 2011-03-02 2012-09-20 Nippon Denshi Kogyo Kk Apparatus and method for forming carbon film, and carbon film
WO2013134653A1 (en) * 2012-03-09 2013-09-12 Air Products And Chemicals, Inc. Methods for making silicon containing films on thin film transistor devices
KR20190059250A (en) * 2017-11-22 2019-05-30 (주)디엔에프 Composition for silicon-containing thin films and method for producing silicon-containing thin film
DE102019116924A1 (en) * 2018-06-27 2020-01-02 Taiwan Semiconductor Manufacturing Co. Ltd. DIELECTRIC INTERLAYER
CN112437971A (en) * 2018-07-19 2021-03-02 应用材料公司 Low temperature high quality dielectric films
CN114908331A (en) * 2022-04-25 2022-08-16 上海陛通半导体能源科技股份有限公司 Deposition method of amorphous carbon film

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020172766A1 (en) * 2001-03-17 2002-11-21 Laxman Ravi K. Low dielectric constant thin films and chemical vapor deposition method of making same
US20110254138A1 (en) * 2010-04-15 2011-10-20 International Business Machines Corporation Low-temperature absorber film and method of fabrication
CN113383108A (en) * 2019-02-05 2021-09-10 弗萨姆材料美国有限责任公司 Deposition of carbon-doped silicon oxide

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284272A (en) * 1991-07-16 2001-10-12 Seiko Epson Corp Semiconductor film formation method and manufacturing method of thin-film semiconductor device
CN1739191A (en) * 2002-12-13 2006-02-22 应用材料有限公司 Nitrogen-free dielectric anti-reflective coating and hardmask
SG120976A1 (en) * 2004-02-11 2006-04-26 Taiwan Semiconductor Mfg Method for forming openings in low-k dielectric layers
JP2012180568A (en) * 2011-03-02 2012-09-20 Nippon Denshi Kogyo Kk Apparatus and method for forming carbon film, and carbon film
WO2013134653A1 (en) * 2012-03-09 2013-09-12 Air Products And Chemicals, Inc. Methods for making silicon containing films on thin film transistor devices
KR20190059250A (en) * 2017-11-22 2019-05-30 (주)디엔에프 Composition for silicon-containing thin films and method for producing silicon-containing thin film
DE102019116924A1 (en) * 2018-06-27 2020-01-02 Taiwan Semiconductor Manufacturing Co. Ltd. DIELECTRIC INTERLAYER
CN112437971A (en) * 2018-07-19 2021-03-02 应用材料公司 Low temperature high quality dielectric films
CN114908331A (en) * 2022-04-25 2022-08-16 上海陛通半导体能源科技股份有限公司 Deposition method of amorphous carbon film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Characterization of low-dielectric-constant SiOC thin films deposited by PECVD for interlayer dielectrics of multilevel interconnection;Hyeong Joon Kim;Surface and Coatings Technology;第171卷;39-45 *

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