SG120976A1 - Method for forming openings in low-k dielectric layers - Google Patents

Method for forming openings in low-k dielectric layers

Info

Publication number
SG120976A1
SG120976A1 SG200400606A SG200400606A SG120976A1 SG 120976 A1 SG120976 A1 SG 120976A1 SG 200400606 A SG200400606 A SG 200400606A SG 200400606 A SG200400606 A SG 200400606A SG 120976 A1 SG120976 A1 SG 120976A1
Authority
SG
Singapore
Prior art keywords
low
dielectric layers
forming openings
openings
forming
Prior art date
Application number
SG200400606A
Inventor
Tien-I Bao
Syun-Ming Jang
Lih-Ping Li
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to SG200400606A priority Critical patent/SG120976A1/en
Publication of SG120976A1 publication Critical patent/SG120976A1/en

Links

SG200400606A 2004-02-11 2004-02-11 Method for forming openings in low-k dielectric layers SG120976A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200400606A SG120976A1 (en) 2004-02-11 2004-02-11 Method for forming openings in low-k dielectric layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200400606A SG120976A1 (en) 2004-02-11 2004-02-11 Method for forming openings in low-k dielectric layers

Publications (1)

Publication Number Publication Date
SG120976A1 true SG120976A1 (en) 2006-04-26

Family

ID=37111138

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200400606A SG120976A1 (en) 2004-02-11 2004-02-11 Method for forming openings in low-k dielectric layers

Country Status (1)

Country Link
SG (1) SG120976A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112768342A (en) * 2019-11-02 2021-05-07 长鑫存储技术有限公司 Semiconductor structure and forming method thereof
CN116497340A (en) * 2023-06-21 2023-07-28 上海陛通半导体能源科技股份有限公司 Method for forming low-temperature silicon oxycarbide film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6005277A (en) * 1996-07-15 1999-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. ARC layer enhancement for reducing metal loss during via etch
US20020084257A1 (en) * 1998-02-11 2002-07-04 Applied Materials, Inc. Intergrated low k dielectrics and etch stops
EP1308994A2 (en) * 2001-09-28 2003-05-07 Texas Instruments Incorporated Method for VIA etching in organo-silica-glass
US20030124859A1 (en) * 1998-09-29 2003-07-03 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6686272B1 (en) * 2001-12-13 2004-02-03 Lsi Logic Corporation Anti-reflective coatings for use at 248 nm and 193 nm

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6005277A (en) * 1996-07-15 1999-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. ARC layer enhancement for reducing metal loss during via etch
US20020084257A1 (en) * 1998-02-11 2002-07-04 Applied Materials, Inc. Intergrated low k dielectrics and etch stops
US20030124859A1 (en) * 1998-09-29 2003-07-03 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
EP1308994A2 (en) * 2001-09-28 2003-05-07 Texas Instruments Incorporated Method for VIA etching in organo-silica-glass
US6686272B1 (en) * 2001-12-13 2004-02-03 Lsi Logic Corporation Anti-reflective coatings for use at 248 nm and 193 nm

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112768342A (en) * 2019-11-02 2021-05-07 长鑫存储技术有限公司 Semiconductor structure and forming method thereof
CN112768342B (en) * 2019-11-02 2022-03-22 长鑫存储技术有限公司 Semiconductor structure and forming method thereof
CN116497340A (en) * 2023-06-21 2023-07-28 上海陛通半导体能源科技股份有限公司 Method for forming low-temperature silicon oxycarbide film
CN116497340B (en) * 2023-06-21 2023-09-12 上海陛通半导体能源科技股份有限公司 Method for forming low-temperature silicon oxycarbide film

Similar Documents

Publication Publication Date Title
GB2440483B (en) Method for luminescent layer formation
TWI366218B (en) Method for manufacturing semiconductor device
TWI341568B (en) Dual damascene wiring and method
EP1811933A4 (en) Barrier layer
EP1869708A4 (en) Interlayer dielectric under stress for an integrated circuit
EP1978555A4 (en) Microelectronic machine and method for manufacturing same
GB2419709B (en) Structure manufacturing method
SG118210A1 (en) Method for fabricating copper interconnects
EP1659414A4 (en) Capacitor deterioration judgment method
GB0420061D0 (en) Method
SG137747A1 (en) Spacer-less low-k dielectric processes
EP1753279A4 (en) Multilayer circuit board manufacturing method
GB0402639D0 (en) Method
EP1795123A4 (en) Antenna unit and method for manufacturing antenna unit
GB0410478D0 (en) Method
SG121927A1 (en) Advanced copper damascene structure
EP1800335A4 (en) Homogeneous copper interconnects for beol
GB0415009D0 (en) Method
GB0419419D0 (en) Method
GB0408887D0 (en) Manufacturing method
SG120976A1 (en) Method for forming openings in low-k dielectric layers
GB0412672D0 (en) Method
GB0405751D0 (en) Method
GB0419405D0 (en) Method
TWI315261B (en) Method for transferring-printing