SG11202009836VA - Polycrystalline silicon rod manufacturing method, and reactor - Google Patents

Polycrystalline silicon rod manufacturing method, and reactor

Info

Publication number
SG11202009836VA
SG11202009836VA SG11202009836VA SG11202009836VA SG11202009836VA SG 11202009836V A SG11202009836V A SG 11202009836VA SG 11202009836V A SG11202009836V A SG 11202009836VA SG 11202009836V A SG11202009836V A SG 11202009836VA SG 11202009836V A SG11202009836V A SG 11202009836VA
Authority
SG
Singapore
Prior art keywords
reactor
polycrystalline silicon
silicon rod
rod manufacturing
manufacturing
Prior art date
Application number
SG11202009836VA
Inventor
Takafumi TATSUKAWA
Yasumasa Aimoto
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11202009836VA publication Critical patent/SG11202009836VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
SG11202009836VA 2018-04-05 2019-03-27 Polycrystalline silicon rod manufacturing method, and reactor SG11202009836VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018073258 2018-04-05
PCT/JP2019/013209 WO2019194045A1 (en) 2018-04-05 2019-03-27 Polycrystalline silicon rod manufacturing method, and reactor

Publications (1)

Publication Number Publication Date
SG11202009836VA true SG11202009836VA (en) 2020-11-27

Family

ID=68100447

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009836VA SG11202009836VA (en) 2018-04-05 2019-03-27 Polycrystalline silicon rod manufacturing method, and reactor

Country Status (8)

Country Link
US (1) US11293094B2 (en)
EP (1) EP3763673B1 (en)
JP (1) JP6664035B1 (en)
KR (1) KR102620589B1 (en)
CN (1) CN111936420B (en)
SG (1) SG11202009836VA (en)
TW (1) TWI778247B (en)
WO (1) WO2019194045A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118541331A (en) * 2022-01-18 2024-08-23 株式会社德山 Reaction furnace for producing polycrystalline silicon rod, gas supply nozzle, method for producing polycrystalline silicon rod, and polycrystalline silicon rod

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4540361A (en) 1984-01-30 1985-09-10 Ppg Industries, Inc. Enhanced pneumatic regenerator flow control
JPH06304841A (en) * 1993-04-21 1994-11-01 Genichi Sato Machine work method
TW416492U (en) * 1999-10-05 2000-12-21 Crownmate Technology Co Ltd Negative pressure generator
EP2039653B1 (en) * 2007-09-20 2015-12-23 Mitsubishi Materials Corporation Reactor for polycrystalline silicon and polycrystalline silicon production method
JP5400359B2 (en) * 2008-02-26 2014-01-29 エア・ウォーター・ゾル株式会社 Gas injection nozzle
RU2011139137A (en) * 2009-02-27 2013-04-10 Токуяма Корпорейшн POLYCRYSTAL SILICON BAR AND DEVICE FOR ITS PRODUCTION
KR20100098319A (en) 2009-02-27 2010-09-06 케어스트림 헬스 인코포레이티드 Method for conditioning a substrate surface for forming an electronic device thereon and resultant device
CN102361688A (en) * 2009-03-20 2012-02-22 株式会社水星技术 Hermetic container for thermal conversion reaction
MY163182A (en) * 2011-01-21 2017-08-15 Shinetsu Chemical Co Apparatus for producing polycrystalline silicon and method for producing polycrystalline silicon
KR20130019182A (en) * 2011-08-16 2013-02-26 (주)세미머티리얼즈 Poly silicon deposition device
JP5699060B2 (en) 2011-09-20 2015-04-08 信越化学工業株式会社 Method for producing polycrystalline silicon
CN103482629B (en) * 2012-06-08 2016-01-06 半材料株式会社 Polysilicon deposition apparatus
US10518237B2 (en) * 2015-04-01 2019-12-31 Hanwha Chemical Corporation Gas distribution unit for fluidized bed reactor system, fluidized bed reactor system having the gas distribution unit, and method for preparing granular polycrystalline silicon using the fluidized bed reactor system
KR102012898B1 (en) * 2015-06-23 2019-08-22 주식회사 엘지화학 Apparatus and Method for producing polycrystalline silicon using multi-way feeding
CN206654735U (en) * 2017-03-24 2017-11-21 亚洲硅业（青海）有限公司 A kind of 48 pairs of rod reduction furnace nozzles
CN112062130B (en) * 2020-09-09 2022-08-05 云南通威高纯晶硅有限公司 Suction type nozzle for reduction furnace in polycrystalline silicon production

Also Published As

Publication number Publication date
US20210054499A1 (en) 2021-02-25
JPWO2019194045A1 (en) 2020-04-30
TW201943644A (en) 2019-11-16
EP3763673A1 (en) 2021-01-13
TWI778247B (en) 2022-09-21
WO2019194045A1 (en) 2019-10-10
CN111936420A (en) 2020-11-13
US11293094B2 (en) 2022-04-05
EP3763673A4 (en) 2022-01-26
KR20200139160A (en) 2020-12-11
CN111936420B (en) 2023-08-18
EP3763673B1 (en) 2023-04-19
JP6664035B1 (en) 2020-03-13
KR102620589B1 (en) 2024-01-02

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