SG11202000131VA - Substituted aluminum nitride for improved acoustic wave filters - Google Patents
Substituted aluminum nitride for improved acoustic wave filtersInfo
- Publication number
- SG11202000131VA SG11202000131VA SG11202000131VA SG11202000131VA SG11202000131VA SG 11202000131V A SG11202000131V A SG 11202000131VA SG 11202000131V A SG11202000131V A SG 11202000131VA SG 11202000131V A SG11202000131V A SG 11202000131VA SG 11202000131V A SG11202000131V A SG 11202000131VA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- combination
- woburn
- pct
- acoustic wave
- Prior art date
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical class Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title abstract 2
- VQKFNUFAXTZWDK-UHFFFAOYSA-N alpha-methylfuran Natural products CC1=CC=CO1 VQKFNUFAXTZWDK-UHFFFAOYSA-N 0.000 abstract 3
- 229910052758 niobium Inorganic materials 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 229910052715 tantalum Inorganic materials 0.000 abstract 3
- 229910052692 Dysprosium Inorganic materials 0.000 abstract 2
- 229910052691 Erbium Inorganic materials 0.000 abstract 2
- 229910052693 Europium Inorganic materials 0.000 abstract 2
- 229910052688 Gadolinium Inorganic materials 0.000 abstract 2
- 229910052689 Holmium Inorganic materials 0.000 abstract 2
- 229910052772 Samarium Inorganic materials 0.000 abstract 2
- 229910052771 Terbium Inorganic materials 0.000 abstract 2
- 229910052775 Thulium Inorganic materials 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- 150000001768 cations Chemical class 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910002091 carbon monoxide Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 229910052706 scandium Inorganic materials 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
- C01P2002/54—Solid solutions containing elements as dopants one element only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Luminescent Compositions (AREA)
- Ceramic Products (AREA)
Abstract
Title: SUBSTITUTED ALUMINUM NITRIDE FOR IMPROVED ACOUSTIC WAVE FILTERS (57) : A piezoelectric material comprises A1N doped with cations of one or more elements selected from the group consisting of: one of Sb, Ta, Nb, or Ge; Cr in combination with one or more of B, Sc, Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb; one of Nb and Ta in combination with one of Li, Mg, Ca, Ni, Co, and Zn; Ca in combination with one of Si, Ge, Ti, Zr, and Hf; Mg in combination with one of Si, Ge, and Ti; and one or more of Co, Sb, Ta, Nb, Si, or Ge in combination with one or more of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb. The cations at least partially substitute for Al in the crystal structure of the piezoelectric material. a (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) vitivio VIII oviolo Ho HIE 010 im mull Hs (19) World Intellectual Property Organization International Bureau (10) International Publication Number WO 2019/010173 Al (43) International Publication Date 10 January 2019 (10.01.2019) WIPO I PCT (51) International Patent Classification: HO1L 41/187 (2006.01) H03H 9/17 (2006.01) HO1L 41/09 (2006.01) (21) International Application Number: PCT/US2018/040706 DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) (22) International Filing Date: 03 July 2018 (03.07.2018) English English (25) Filing Language: (26) Publication Language: (30) Priority Data: 62/529,742 07 July 2017 (07.07.2017) US (71) Applicant: SKYWORKS SOLUTIONS, INC. [US/US]; 20 Sylvan Road, Woburn, MA 01801 (US). (72) Inventors: HILL, Michael, David; 20 Sylvan Road, Woburn, MA 01801 (US). GAMMEL, Peter, Ledel; 20 Sylvan Road, Woburn, MA 01801 (US). (74) Agent: GERSTENZANG, Gregory, K. et al.; Lando & Anastasi, LLP, Riverfront Office Park, One Main Street, Suite 1100, Cambridge, MA 02142 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, W O 20 19/0 10 17 3 Al FIG . 4
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762529742P | 2017-07-07 | 2017-07-07 | |
| PCT/US2018/040706 WO2019010173A1 (en) | 2017-07-07 | 2018-07-03 | Substituted aluminum nitride for improved acoustic wave filters |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202000131VA true SG11202000131VA (en) | 2020-02-27 |
Family
ID=64903404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202000131VA SG11202000131VA (en) | 2017-07-07 | 2018-07-03 | Substituted aluminum nitride for improved acoustic wave filters |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US11031540B2 (en) |
| JP (2) | JP7038795B2 (en) |
| KR (2) | KR102461739B1 (en) |
| CN (1) | CN110998886B (en) |
| DE (1) | DE112018003451T5 (en) |
| GB (5) | GB2600570B (en) |
| SG (1) | SG11202000131VA (en) |
| TW (2) | TWI781882B (en) |
| WO (1) | WO2019010173A1 (en) |
Families Citing this family (17)
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| CN106062238B (en) * | 2014-03-03 | 2018-09-04 | 株式会社村田制作所 | Aluminum nitride piezoelectric film and its manufacturing method, piezoresistive material, piezoelectric part |
| GB2600570B (en) | 2017-07-07 | 2022-11-16 | Skyworks Solutions Inc | Substituted aluminum nitride for improved acoustic wave filters |
| US11765977B2 (en) * | 2017-10-13 | 2023-09-19 | Colorado School Of Mines | Tuning the piezoelectric and mechanical properties of the ALN system via alloying with YN and BN |
| US10944362B2 (en) * | 2018-07-30 | 2021-03-09 | International Business Machines Corporation | Coupling surface acoustic wave resonators to a Josephson ring modulator |
| US10348245B1 (en) | 2018-07-30 | 2019-07-09 | International Business Machines Corporation | Applications of surface acoustic wave resonators coupled to a josephson ring modulator |
| US10707812B2 (en) | 2018-07-30 | 2020-07-07 | International Business Machines Corporation | Superconducting device that mixes surface acoustic waves and microwave signals |
| US10320331B1 (en) | 2018-07-30 | 2019-06-11 | International Business Machines Corporation | Applications of a superconducting device that mixes surface acoustic waves and microwave signals |
| CN113226982B (en) * | 2019-02-22 | 2023-08-18 | 国立研究开发法人产业技术综合研究所 | Nitride piezoelectric body and MEMS device using the same |
| JP7425960B2 (en) | 2019-10-29 | 2024-02-01 | Tdk株式会社 | piezoelectric thin film element |
| JP7345855B2 (en) * | 2020-02-27 | 2023-09-19 | 国立研究開発法人産業技術総合研究所 | Nitride materials, piezoelectric bodies made of the same, and MEMS devices using the piezoelectric bodies |
| KR102551248B1 (en) * | 2020-05-25 | 2023-07-03 | 삼성전기주식회사 | Bulk-acoustic wave resonator and method for fabricating the same |
| US20210367582A1 (en) * | 2020-05-25 | 2021-11-25 | Samsung Electro-Mechanics Co., Ltd | Bulk-acoustic wave resonator and method for fabricating bulk-acoustic wave resonator |
| KR20220028297A (en) * | 2020-08-28 | 2022-03-08 | 삼성전기주식회사 | Acoustic resonator filter |
| CN111817688B (en) * | 2020-09-14 | 2020-12-04 | 成都频岢微电子有限公司 | High-isolation surface acoustic wave duplexer and method for realizing high isolation |
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| US20230124493A1 (en) | 2021-10-15 | 2023-04-20 | Skyworks Global Pte. Ltd. | Bulk acoustic wave resonator with stacked piezoelectric layers |
| WO2023127112A1 (en) * | 2021-12-28 | 2023-07-06 | 国立大学法人東北大学 | Piezoelectric thin-film, piezoelectric thin-film manufacturing device, piezoelectric thin-film manufacturing method, and fatigue estimation system |
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2018
- 2018-07-03 GB GB2118603.6A patent/GB2600570B/en active Active
- 2018-07-03 SG SG11202000131VA patent/SG11202000131VA/en unknown
- 2018-07-03 GB GB2210849.2A patent/GB2606318B/en active Active
- 2018-07-03 US US16/026,436 patent/US11031540B2/en active Active
- 2018-07-03 DE DE112018003451.8T patent/DE112018003451T5/en active Pending
- 2018-07-03 JP JP2020500628A patent/JP7038795B2/en active Active
- 2018-07-03 GB GB2210851.8A patent/GB2606319B/en active Active
- 2018-07-03 TW TW111103838A patent/TWI781882B/en active
- 2018-07-03 KR KR1020207003389A patent/KR102461739B1/en active IP Right Grant
- 2018-07-03 CN CN201880049704.4A patent/CN110998886B/en active Active
- 2018-07-03 GB GB2000500.5A patent/GB2578979B/en active Active
- 2018-07-03 KR KR1020227037475A patent/KR20220148340A/en active Application Filing
- 2018-07-03 GB GB2210857.5A patent/GB2608714B/en active Active
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| US11031540B2 (en) | 2021-06-08 |
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