SG11201909393SA - Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device - Google Patents

Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device

Info

Publication number
SG11201909393SA
SG11201909393SA SG11201909393SA SG11201909393SA SG 11201909393S A SG11201909393S A SG 11201909393SA SG 11201909393S A SG11201909393S A SG 11201909393SA SG 11201909393S A SG11201909393S A SG 11201909393SA
Authority
SG
Singapore
Prior art keywords
positive
type photosensitive
resin composition
electronic device
semiconductor element
Prior art date
Application number
Inventor
Yu Aoki
Masahiro Hashimoto
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201909393SA publication Critical patent/SG11201909393SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Disclosed is a positive-type photosensitive resin composition, comprising an (A) alkali-soluble resin, a (B) compound represented by the following foiniula () or a compound represented by the following 5 formula (2), and a (C) compound having two or more epoxy groups, R 1 0 1 OR6 R20 NN0 R5 N N ,r A R - 0 OR wherein R 1 to R 6 each independently represent an alkyl group having 1 to 10 carbon atoms, (1) R 7 0 HO R 8 0 OR 9 OH OR 19 H3C - C—CH 3 R 11 0 OH OR 12 (2) 10 wherein R' to R 12 each independently represent an alkyl group having 1 to 10 carbon atoms. 56
SG11201909393S 2017-05-10 2017-05-10 Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device SG11201909393SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/017754 WO2018207294A1 (en) 2017-05-10 2017-05-10 Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device

Publications (1)

Publication Number Publication Date
SG11201909393SA true SG11201909393SA (en) 2019-11-28

Family

ID=64104604

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201909393S SG11201909393SA (en) 2017-05-10 2017-05-10 Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device

Country Status (6)

Country Link
JP (1) JP7092121B2 (en)
KR (1) KR102425708B1 (en)
CN (1) CN110582726B (en)
SG (1) SG11201909393SA (en)
TW (1) TWI781171B (en)
WO (1) WO2018207294A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7151874B2 (en) * 2019-03-27 2022-10-12 昭和電工マテリアルズ株式会社 Resin composition, cured product, semiconductor element and electronic device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006243563A (en) * 2005-03-04 2006-09-14 Fuji Photo Film Co Ltd Photosensitive solder resist composition and photosensitive solder resist film, and permanent pattern and method for forming the same
JP4640037B2 (en) 2005-08-22 2011-03-02 Ｊｓｒ株式会社 Positive photosensitive insulating resin composition and cured product thereof
JP5067028B2 (en) 2007-06-12 2012-11-07 日立化成工業株式会社 Positive photosensitive resin composition, method for producing resist pattern, and electronic device
CN101855596B (en) * 2007-11-12 2013-05-22 日立化成株式会社 Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device
JP2010073948A (en) 2008-09-19 2010-04-02 Gigaphoton Inc Power supply device for pulse laser
KR101397771B1 (en) * 2008-12-26 2014-05-20 히타치가세이가부시끼가이샤 Positive-type photosensitive resin composition, method for producing resist pattern, semiconductor device, and electronic device
EP2618216B1 (en) * 2010-09-16 2019-05-29 Hitachi Chemical Co., Ltd. Positive photosensitive resin composition, method of creating resist pattern, and electronic component
JP5846110B2 (en) 2011-12-09 2016-01-20 信越化学工業株式会社 Chemically amplified negative resist composition, photocurable dry film, method for producing the same, pattern forming method, and film for protecting electric / electronic parts
JP2014202849A (en) * 2013-04-03 2014-10-27 日立化成株式会社 Photosensitive adhesive composition, production method of pattern cured film using the same, and electronic component
JP5981465B2 (en) 2014-01-10 2016-08-31 信越化学工業株式会社 Negative resist material and pattern forming method using the same
JP6034326B2 (en) 2014-03-26 2016-11-30 富士フイルム株式会社 Semiconductor device and composition for forming insulating layer
JP2015200819A (en) * 2014-04-09 2015-11-12 日立化成デュポンマイクロシステムズ株式会社 Positive photosensitive resin composition, patterned cured film using the same, and production method thereof
JP2015206013A (en) * 2014-04-23 2015-11-19 日立化成株式会社 Photosensitive adhesive composition, method for manufacturing semiconductor device using the same, and semiconductor device
JP6199811B2 (en) * 2014-06-18 2017-09-20 信越化学工業株式会社 Positive photosensitive resin composition, photocurable dry film, method for producing the same, laminate, and pattern forming method
JP2016177027A (en) * 2015-03-19 2016-10-06 日立化成株式会社 Photosensitive resin composition, patterned cured film formed by using the photosensitive resin composition, and organic el display device including the patterned cured film as ink-repelling bank film

Also Published As

Publication number Publication date
CN110582726A (en) 2019-12-17
TWI781171B (en) 2022-10-21
TW201901301A (en) 2019-01-01
JP7092121B2 (en) 2022-06-28
KR102425708B1 (en) 2022-07-28
CN110582726B (en) 2023-08-04
KR20200006522A (en) 2020-01-20
WO2018207294A1 (en) 2018-11-15
JPWO2018207294A1 (en) 2020-03-12

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