SG11201908555TA - Sputtering target and manufacturing method therefor - Google Patents

Sputtering target and manufacturing method therefor

Info

Publication number
SG11201908555TA
SG11201908555TA SG11201908555TA SG11201908555TA SG 11201908555T A SG11201908555T A SG 11201908555TA SG 11201908555T A SG11201908555T A SG 11201908555TA SG 11201908555T A SG11201908555T A SG 11201908555TA
Authority
SG
Singapore
Prior art keywords
sputtering target
manufacturing
method therefor
sputtering
target
Prior art date
Application number
Inventor
Tomio Otsuki
Yasushi Morii
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201908555TA publication Critical patent/SG11201908555TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/05—Alloys based on copper with manganese as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less. Fig. 1
SG11201908555T 2017-03-30 2018-03-16 Sputtering target and manufacturing method therefor SG11201908555TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017068457 2017-03-30
JP2018040212 2018-03-06
PCT/JP2018/010629 WO2018180645A1 (en) 2017-03-30 2018-03-16 Sputtering target and manufacturing method therefor

Publications (1)

Publication Number Publication Date
SG11201908555TA true SG11201908555TA (en) 2019-10-30

Family

ID=63675794

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201908555T SG11201908555TA (en) 2017-03-30 2018-03-16 Sputtering target and manufacturing method therefor

Country Status (8)

Country Link
US (2) US11718907B2 (en)
EP (1) EP3604611A4 (en)
JP (1) JP7018055B2 (en)
KR (2) KR20190045315A (en)
CN (1) CN109983149A (en)
SG (1) SG11201908555TA (en)
TW (1) TWI663274B (en)
WO (1) WO2018180645A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210102191A (en) * 2018-12-13 2021-08-19 미쓰비시 마테리알 가부시키가이샤 pure copper plate
CN111705276B (en) * 2020-07-01 2022-05-27 宁波江丰电子材料股份有限公司 Ultra-pure copper-manganese alloy and treatment method thereof
CN112063976B (en) * 2020-09-11 2022-08-30 宁波江丰电子材料股份有限公司 Ultrahigh-purity copper target material and grain control method thereof
CN112921287B (en) * 2021-01-22 2022-10-28 宁波江丰电子材料股份有限公司 Ultrahigh-purity copper target material and grain orientation control method thereof
CN113046705B (en) * 2021-03-16 2022-08-16 宁波江丰电子材料股份有限公司 Copper target material and preparation method and application thereof
CN113894234A (en) * 2021-09-27 2022-01-07 宁波江丰电子材料股份有限公司 Preparation method of cooling back plate
CN115896538B (en) * 2022-10-27 2024-04-26 中色正锐(山东)铜业有限公司 High-performance copper-nickel-silicon-chromium alloy plate and processing method and application thereof

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4976013A (en) 1972-11-25 1974-07-23
JPS5277808A (en) 1976-07-28 1977-06-30 Nippon Piston Ring Co Ltd Sintered ferroalloy for manufacturing valve seat
JP3975414B2 (en) * 1997-11-28 2007-09-12 日立金属株式会社 Sputtering copper target and method for producing the same
JP2001049426A (en) * 1999-07-08 2001-02-20 Praxair St Technol Inc Manufacture of copper sputtering target, and assembly of copper sputtering target and backing plate
US20040072009A1 (en) 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
WO2003064722A1 (en) 2002-01-30 2003-08-07 Nikko Materials Company, Limited Copper alloy sputtering target and method for manufacturing the target
KR100599028B1 (en) 2003-02-07 2006-07-12 일동제약주식회사 Preparation method of 6-aminomethyl-6,11-dihydro-5H-dibenz[b,e]azepin
KR100590936B1 (en) 2004-06-22 2006-06-19 현대자동차주식회사 The regeneration strategy of catalyzed particulate filter
JP5277808B2 (en) 2008-09-09 2013-08-28 三菱マテリアル株式会社 Method for producing fine grain copper material
JP5464352B2 (en) * 2010-03-05 2014-04-09 三菱マテリアル株式会社 Method for producing high purity copper processed material having uniform and fine crystal structure
JP5520746B2 (en) * 2010-08-24 2014-06-11 古河電気工業株式会社 Copper material for sputtering target and method for producing the same
JP5787647B2 (en) * 2011-07-08 2015-09-30 古河電気工業株式会社 Method for producing copper material for sputtering target
KR20160040725A (en) 2011-09-14 2016-04-14 제이엑스 킨조쿠 가부시키가이샤 High-purity copper-manganese-alloy sputtering target
CN103827349B (en) * 2011-09-30 2016-08-24 吉坤日矿日石金属株式会社 Sputtering target and manufacture method thereof
KR101645834B1 (en) * 2012-01-12 2016-08-04 제이엑스금속주식회사 High-purity copper sputtering target
JP2013253309A (en) 2012-06-08 2013-12-19 Sh Copper Products Co Ltd Cu-Mn ALLOY SPUTTERING TARGET, LAMINATED WIRING OF SEMICONDUCTOR ELEMENT USING THE SAME, AND METHOD FOR MANUFACTURING LAMINATED WIRING
JP5792213B2 (en) 2013-02-19 2015-10-07 京楽産業．株式会社 Game machine
JP5612147B2 (en) * 2013-03-11 2014-10-22 三菱マテリアル株式会社 Silver alloy sputtering target for forming conductive film and method for producing the same
JP5752736B2 (en) * 2013-04-08 2015-07-22 三菱マテリアル株式会社 Sputtering target
JP6067927B2 (en) * 2014-03-31 2017-01-25 Ｊｘ金属株式会社 Copper or copper alloy sputtering target

Also Published As

Publication number Publication date
JPWO2018180645A1 (en) 2020-02-13
KR20190045315A (en) 2019-05-02
US20230349035A1 (en) 2023-11-02
CN109983149A (en) 2019-07-05
US20200032385A1 (en) 2020-01-30
EP3604611A4 (en) 2021-02-17
KR102362400B1 (en) 2022-02-14
US11718907B2 (en) 2023-08-08
JP7018055B2 (en) 2022-02-17
KR20210005328A (en) 2021-01-13
TWI663274B (en) 2019-06-21
WO2018180645A1 (en) 2018-10-04
EP3604611A1 (en) 2020-02-05
TW201837216A (en) 2018-10-16

Similar Documents

Publication Publication Date Title
SG11201908555TA (en) Sputtering target and manufacturing method therefor
MX2017013451A (en) Plated steel plate.
TW200641165A (en) Elastomer bonding of large area sputtering target
MX2017014938A (en) Steel sheet and method for producing same.
MX2017015085A (en) Steel sheet and manufacturing method therefor.
MX2019009701A (en) High strength steel sheet.
MX2019009598A (en) High strength steel plate.
MX2016000266A (en) High-strength plated steel sheet having superior plating properties, workability, and delayed fracture resistance, and method for producing same.
MX2017009015A (en) High-strength plated steel sheet having excellent plating properties, workability, and delayed fracture resistance, and method for producing same.
MX2018003227A (en) Manufactured product for covering surfaces and related processes of realization and laying.
MX2017009021A (en) High-strength plated steel sheet and method for producing same.
MX2017010813A (en) Hot-rolled steel sheet or plate.
MY180359A (en) Sputtering target
TW200641166A (en) Components comprising metallic material, physical vapor deposition targets, thin films, and methods of forming metallic components
IN2014DE02341A (en)
MY179634A (en) Aluminum alloy substrate for magnetic disks, method for producing same, and magnetic disk using this aluminum alloy substrate for magnetic disks
MX2016005086A (en) Hot-rolled steel sheet having excellent surface hardness after carburizing heat treatment and excellent drawability.
IN2014DE00802A (en)
MY201888A (en) Hard disk substrate and hard disk device including the hard disk substrate
MX2019010840A (en) Plated material and manufacturing method therefor.
MX2016012677A (en) Hot-stamping steel material.
SG11201810964UA (en) Sputtering target and production method therefor
MX2019015322A (en) Hot-pressed member and method for manufacturing same, and cold-rolled steel sheet for hot pressing and method for manufacturing same.
MY187443A (en) Method for manufacturing a component of austenitic steel
MX2021013945A (en) High-strength member, method for manufacturing high-strength member, and method for manufacturing steel sheet for high-strength member.