JP3975414B2 - Sputtering copper target and method for producing the same - Google Patents
Sputtering copper target and method for producing the same Download PDFInfo
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- JP3975414B2 JP3975414B2 JP34425497A JP34425497A JP3975414B2 JP 3975414 B2 JP3975414 B2 JP 3975414B2 JP 34425497 A JP34425497 A JP 34425497A JP 34425497 A JP34425497 A JP 34425497A JP 3975414 B2 JP3975414 B2 JP 3975414B2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 23
- 229910052802 copper Inorganic materials 0.000 title claims description 23
- 239000010949 copper Substances 0.000 title claims description 23
- 238000004544 sputter deposition Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000013078 crystal Substances 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 16
- 238000001953 recrystallisation Methods 0.000 claims description 10
- 238000005097 cold rolling Methods 0.000 claims description 9
- 238000005096 rolling process Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005482 strain hardening Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
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Description
【０００１】
【発明の属する技術分野】
本発明は、スパッタリングにより半導体配線等となる純銅の膜を形成するために用いられるスパッタリング用銅ターゲットおよびその製造方法に関するものである。
【０００２】
【従来の技術】
半導体デバイスにおいては、情報処理の高速化は必要不可欠である。また、高機能化の必要性からゲート長や配線幅の微細化が行われている。しかし、微細化した配線に高速化のために大電流をながすと、電流密度が増加し、電流密度の増加は抵抗の増大を招く。
このような抵抗値の増大は、処理信号の遅延の原因になり、半導体デバイスの高速化の障害となっている。
配線等の微細化対策としては、従来から用いられている配線材料であるＡｌＣｕ合金よりも４０％程度抵抗の低い純銅に配線の適用が検討され、実用化されつつある。
【０００３】
上述した半導体配線等の微細化は、さらに進行し、現在０．２０μｍ程度の幅になっており、今後ますます狭くなる。
そして、半導体デバイスにおいては、絶縁層とコンタクト部が窪み状、あるいは階段状に形成されているため、このような形状に依存することなく均一な配線膜を形成することが求められる。
この配線膜の形成には、一般にターゲットを用いたスパッタリング法が用いられる。スパッタリング法は、ターゲットから放出された極微細な粒子を基板に付着させることで薄膜を形成する技術である。
このスパッタリング法においては、ターゲットから飛び出す粒子の方向、すなわち放出角度が一定ではなく分布をもっているため、深い窪み状に形成したコンタクトホール内に配線膜を形成しようとすると、側面への付着が多くなり、底部への付着量が少なくなってしまうという問題がある。
【０００４】
この対策として、製造装置であるスパッタリング装置にコリメータと呼ばれるフィルタを取り付け、方向性の揃ったスパッタ粒子のみがコンタクトホール方向へ飛着するという方法を採用することが多い。
また、ターゲットと基板距離を長くして、方向性の揃ったスパッタ粒子のみコンタクトホールに到達する方法も試みられている。
しかし、上述した２つの方法は、方向性の揃わない粒子を排除する方法であり、この方法だけでは生産性の低下は避けられない。
そのため、できるだけ方向性の揃ったスパッタリング粒子を放出する技術の開発が求められる。
【０００５】
また、スパッタリング法においては、上述したスパッタリング粒子の方向性の問題に加えて、粗大クラスタ(スプラッシュ、パーティクル、ダストとも呼ばれる)の発生も大きな問題である。
粗大クラスタが発生すると、正常な薄膜とはならず、付着不良が発生して、断線等の問題を引き起こす場合がある。
本発明の上記問題点に鑑み、スパッタリング粒子の方向性をそろえ、かつ粗大クラスタの発生を低減したスパッタリング用銅ターゲットおよびその製造方法を提供することである。
【０００６】
【課題を解決するための手段】
本発明者は、上記の問題に対して、ターゲットの改善からその対策を鋭意検討した。
その結果、結晶粒の微細化と、歪み量の低減により、粗大クラスタの発生が低減できるとともに、ターゲットからスパッタされた銅粒子の方向性がそろい、狭くて深いコンタクトホールでも均一に銅配線を成形することが可能であることを見いだし本発明に到達した。
【０００７】
すなわち、本発明は、純度が９９．９９５ｗｔ％以上である純銅において、実質的な再結晶組織を有し、平均結晶粒径が８０ミクロン以下であり、かつビッカース硬さが１００以下であるスパッタリング用銅ターゲットである。好ましくは、平均結晶粒径は、３０ミクロン以下、最大結晶粒径を１００ミクロン以下とする。
【０００８】
また、本発明のターゲットの製造方法は、純度が９９．９９５ｗｔ％以上である純銅のインゴットを熱間加工し、その後９００℃以下の温度で焼鈍を行い、ついで冷間圧延を４０％以上の圧延率で施した後、５００℃以下の温度で再結晶焼鈍して、ターゲットを得るものである。
【０００９】
さらにビッカース硬さを１００ＨＶ以下にする。すなわち歪み量を低減することによって、一層直進性が向上し、かつスパッタリングの際に粗大な異物の発生が低減されるスパッタリング用銅ターゲットである。
【００１０】
【発明の実施の形態】
本発明の重要な特徴の一つは、純度が９９．９９５ｗｔ％以上である純銅において、ミクロ組織を再結晶組織とし、その平均結晶粒径を８０μｍ以下に制限するとともに、ターゲットの有する歪みを低減したことである。
まず、再結晶組織に調整することにより、加工時に結晶粒が蓄えた歪み量の差違をなくすことで、スパッタリングの進行を均一化させ、スパッタリング表面にできるだけ凹凸を形成させないようにすることができる。本発明者の検討によれば、純度９９．９９５ｗｔ％以上の純銅においては、圧延による冷間加工歪みを加え、その後加熱すれば、再結晶組織を容易に得ることができる。
これにより、表面の凹凸による斜面によって、斜め方向にスパッタ粒子が飛び、スパッタ粒子の方向が広がるのを防止できる。
【００１１】
また、再結晶組織にすることに加えて、結晶粒を微細化することが、スパッタ粒子の方向性をそろえるのに極めて効果が高い。
その理由は、不詳であるが、微細な結晶粒に調整することで、結晶粒界の存在あるいは結晶粒毎のスパッタリング速度の違いの影響で発生する局部的なスパッタリングのエロージョン進行のばらつきが目立たなくなり、スパッタリングターゲット表面に極度の凹凸の発生を防いでいるためと考えられる。
本発明者の検討によれば、本発明に適用する純銅においては、上述した再結晶組織を得る過程において、たとえば、冷間圧延を４０％以上の圧延率で施した後、５００℃以下の温度に調整した焼鈍を適用することにより、平均結晶粒径が８０ミクロン以下、好ましくは３０ミクロン以下、最大結晶粒径１００ミクロン以下の均一微細組織に調整することでスパッタ粒子の方向性を揃えることができる。
【００１２】
さらに、歪み量の多い、すなわち硬いことで特定されるターゲットを使用した場合は、スパッタリング時の歪みの解放による粗大なクラスタの発生とそれに起因する凹凸の発生がある。そのため、歪み量の多いターゲットでは、スパッタ粒子の方向性が揃わないものとなる。
本発明においては、銅ターゲットの歪みを除きスパッタリングの方向性の改善が明確となるターゲットのビッカース硬さを１００以下と規定した。
上述した純銅ターゲットの再結晶組織における凹凸の発生の抑制効果は、粗大クラスタの発生の抑制にも効果があることが認められた。
【００１３】
本発明の製造方法においては、銅ターゲット素材であるインゴットを熱間加工後の９００℃以下の温度で焼鈍を行う。熱間加工後の焼鈍は、冷間加工前の歪みのばらつきをなくして、冷間加工による均一な歪みを付加するために重要である。また、焼鈍温度の上昇は粗大な結晶粒を形成する。こうなると、冷間圧延後の再結晶は主に粒界で起こるが、この起点となる結晶粒界が粗かつ不均一に分布することになる。よって冷間加工後の再結晶焼鈍において、均一な再結晶組織が得られないという問題が起こる。しかし９００℃以上で冷間加工前の熱処理を行い結晶粒を粗大化させた場合にも、冷間加工と焼鈍を繰り返すことにより、均一微細組織は得られる。ただし、この工程では著しく生産性が低下しかつ生産コストが増加する。したがって、９００℃以下の焼鈍温度とすることが必要である。好ましくは、熱間加工の終了温度より１５０℃低い温度から終了温度までの温度範囲である。
【００１４】
また、冷間圧延率を４０％以上としたのは、４０％未満であると再結晶のための焼鈍温度を高くする必要があり、再結晶時に微細結晶粒が得られなくなるためである。
また、冷間圧延後の再結晶焼鈍の温度を５００℃以下としたのは、５００℃を越える温度で焼鈍を行うと、再結晶粒が粗大化するためである。
好ましくは、熱間加工を８５０〜５００℃の間で行い、その次に焼鈍を３５０℃〜５００℃で行う。その後の冷間圧延を８０％以上行い、最後に再結晶させる焼鈍を２００〜４５０℃で行うものとする。
【００１５】
【実施例】
本発明の実施例を以下に示す。
表１に示す銅インゴットを表２に示す条件で、熱間加工し焼鈍を行い、ついで冷間圧延、その後再結晶焼鈍を行った。
得られたターゲット素材を直径３００ｍｍ×厚み４ｍｍ機械加工し、ＤＣマグネトロンスパッタリング用ターゲットとした。
得られたターゲットを用いて、到達真空度５×（１０のマイナス５乗）Ｐａ、アルゴン圧力０．３Ｐａ、供給電力１５Ｗ／ｃｍ2でシリコン基板へのスパッタリングを行った。
【００１６】
【表１】
【表２】
評価は、スパッタリング粒子の方向性については、ボトムカバレージ率を指標とした。このボトムカバレージはホール径０．５μｍでアスペクト比１．５のコンタクトホールに成膜した際のトップ膜厚とボトム膜厚の差の比より算出した。
すなわち、ボトムカバレージ率の値が高いということは、コンタクトホールの底部により多くのスパッタ粒子が到達したことを示すものであり、スパッタ粒子の方向性が揃っていることを意味するものである。
また、粗大クラスターの発生に起因する異物につては６インチウェハー中の０．３μｍ以上の発生個数で評価した。
これらの評価結果を表３に示す
【００１９】
【表３】
表３から分かるように、本発明の範囲にある平均結晶粒径と硬さの試料Ｎｏ．５、６、７ではボトムカバレージが２０％以上あり、スパッタ粒子の方向性が揃っている。特に、平均結晶粒径３０μｍ以下であるＮｏ．５では２６％と非常に良い直進性を示している。また、異物数も１０個以下となっており、非常に異物の発生数も少ない。
一方、再結晶化できなかった試料Ｎｏ．１およびＮｏ．２は、ボトムカバレージが低く、スパッタ粒子の方向性が揃っていないことがわかる。
また、熱間圧延後の焼鈍温度が本発明の範囲よりも高い試料Ｎｏ．３は、再結晶が均一に起こらず、本発明の範囲を外れた粗大な結晶粒を生成し、十分なボトムカバレージが得られず、スパッタ粒子の方向性が揃っていないことがわかる。
【００２１】
冷間圧延率が３５％低く、かつ冷間圧延後の焼鈍温度が高くしたために、結晶粒が粗大化した試料Ｎｏ．４では、Ｎｏ．３と同様にボトムカバレージ率が１７％と低い。さらに異物数も１３個と多くなっていることが分かる。
図１に本発明例の均一微細ミクロ組織を有しているＮｏ．５の組織写真を示す。
また、図２に比較例のミクロ組織が不均一で粗大化している試料Ｎｏ．３の組織写真を示す。
【００２２】
【発明の効果】
本発明の半導体配線用銅ターゲットおよびその製造方法は、半導体の高速化、微細化を進める上で必要となる銅配線をスパッタリング加工で行う際に、効率良く成膜でき、かつ歩留まり向上が図れる。このことは半導体産業において、非常に重要な発明である。
【図面の簡単な説明】
【図１】本発明のターゲットの４００倍のミクロ組織写真である。
【図２】比較例のターゲットの２５倍のミクロ組織写真である。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a sputtering copper target used for forming a pure copper film to be a semiconductor wiring or the like by sputtering and a method for manufacturing the same.
[0002]
[Prior art]
In semiconductor devices, speeding up of information processing is indispensable. In addition, gate lengths and wiring widths have been miniaturized because of the need for higher functionality. However, when a large current is applied to the miniaturized wiring for speeding up, the current density increases, and the increase in current density causes an increase in resistance.
Such an increase in the resistance value causes a delay of the processing signal, which is an obstacle to increasing the speed of the semiconductor device.
As measures for miniaturization of wiring and the like, application of wiring to pure copper having a resistance of about 40% lower than that of an AlCu alloy which is a conventionally used wiring material has been studied and put into practical use.
[0003]
The above-described miniaturization of semiconductor wiring and the like has further progressed, and now has a width of about 0.20 μm, and will become narrower in the future.
In a semiconductor device, since the insulating layer and the contact portion are formed in a hollow shape or stepped shape, it is required to form a uniform wiring film without depending on such a shape.
For the formation of this wiring film, a sputtering method using a target is generally used. The sputtering method is a technique for forming a thin film by attaching ultrafine particles emitted from a target to a substrate.
In this sputtering method, the direction of the particles jumping out from the target, that is, the emission angle is not constant but has a distribution. Therefore, when a wiring film is formed in a contact hole formed in a deep depression, adhesion to the side surface increases. There is a problem that the amount of adhesion to the bottom is reduced.
[0004]
As a countermeasure against this, a method of attaching a filter called a collimator to a sputtering apparatus as a manufacturing apparatus and adopting a method in which only sputtered particles having a uniform direction land in the contact hole direction is often adopted.
In addition, a method has been attempted in which only the sputtered particles with uniform direction reach the contact hole by increasing the distance between the target and the substrate.
However, the above-described two methods are methods for eliminating particles having non-uniform directions, and a decrease in productivity is inevitable only by this method.
For this reason, development of a technique for emitting sputtered particles with as much directivity as possible is required.
[0005]
In addition, in the sputtering method, in addition to the problem of the directionality of the sputtered particles described above, the generation of coarse clusters (also called splash, particles, and dust) is a big problem.
When coarse clusters occur, the thin film does not become a normal thin film, and adhesion failure may occur, causing problems such as disconnection.
In view of the above-described problems of the present invention, it is an object of the present invention to provide a sputtering copper target having the same directionality of the sputtered particles and reduced generation of coarse clusters, and a method for producing the same.
[0006]
[Means for Solving the Problems]
The present inventors diligently studied countermeasures from the improvement of the target with respect to the above problems.
As a result, the generation of coarse clusters can be reduced by refining crystal grains and reducing the amount of strain, and the direction of the copper particles sputtered from the target is uniform, and copper wiring can be uniformly formed even in narrow and deep contact holes. We have found that it is possible to achieve this invention.
[0007]
That is, the present invention is for pure copper having a purity of 99.995 wt% or more, having a substantial recrystallized structure, an average crystal grain size of 80 microns or less, and a Vickers hardness of 100 or less. It is a copper target. Preferably, the average crystal grain size is 30 microns or less and the maximum crystal grain size is 100 microns or less.
[0008]
In addition, the method for producing a target of the present invention hot-processes a pure copper ingot having a purity of 99.995 wt% or more, then anneals it at a temperature of 900 ° C. or less, and then cold-rolls it to 40% or more. Then, the target is obtained by recrystallization annealing at a temperature of 500 ° C. or lower.
[0009]
Further, the Vickers hardness is set to 100 HV or less. That is, by reducing the amount of strain, the copper target for sputtering is further improved in straightness and the generation of coarse foreign matters is reduced during sputtering.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
One of the important features of the present invention is that, in pure copper having a purity of 99.995 wt% or more, the microstructure is a recrystallized structure, the average crystal grain size is limited to 80 μm or less, and the strain of the target is reduced. It is that.
First, by adjusting to a recrystallized structure, it is possible to eliminate the difference in the amount of strain accumulated in the crystal grains during processing, thereby making the progress of sputtering uniform and preventing the formation of irregularities as much as possible on the sputtering surface. According to the study of the present inventors, in pure copper having a purity of 99.995 wt% or more, a recrystallized structure can be easily obtained by applying cold working distortion due to rolling and then heating.
Thereby, it is possible to prevent the sputtered particles from flying obliquely and spreading the sputtered particles due to the inclined surface of the surface.
[0011]
In addition to making a recrystallized structure, miniaturizing crystal grains is extremely effective in aligning the direction of sputtered particles.
The reason for this is unknown, but by adjusting to fine crystal grains, the variation in local erosion progress caused by the existence of grain boundaries or the difference in sputtering speed for each crystal grain becomes inconspicuous. This is thought to be because the generation of extreme irregularities on the surface of the sputtering target is prevented.
According to the inventor's study, in the pure copper applied to the present invention, in the process of obtaining the recrystallized structure described above, for example, after performing cold rolling at a rolling rate of 40% or more, a temperature of 500 ° C. or less. By applying the annealing adjusted to the above, the orientation of the sputtered particles can be made uniform by adjusting to a uniform microstructure with an average crystal grain size of 80 microns or less, preferably 30 microns or less and a maximum crystal grain size of 100 microns or less. it can.
[0012]
Further, when a target having a large amount of strain, that is, a target specified by being hard, is used, there are generation of coarse clusters due to release of strain during sputtering and generation of irregularities resulting therefrom. For this reason, in a target with a large amount of distortion, the directionality of the sputtered particles is not uniform.
In the present invention, the Vickers hardness of the target that makes clear the improvement of the directionality of sputtering except for the distortion of the copper target is defined as 100 or less.
It was confirmed that the above-described effect of suppressing unevenness in the recrystallized structure of the pure copper target was effective in suppressing the generation of coarse clusters.
[0013]
In the manufacturing method of the present invention, an ingot that is a copper target material is annealed at a temperature of 900 ° C. or less after hot working. Annealing after hot working is important in order to eliminate variation in distortion before cold working and to add uniform strain by cold working. Also, the increase in the annealing temperature forms coarse crystal grains. In this case, recrystallization after cold rolling occurs mainly at the grain boundaries, but the crystal grain boundaries that are the starting points are distributed roughly and non-uniformly. Therefore, there arises a problem that a uniform recrystallized structure cannot be obtained in recrystallization annealing after cold working. However, even when the heat treatment before cold working is performed at 900 ° C. or higher and the crystal grains are coarsened, a uniform microstructure can be obtained by repeating cold working and annealing. However, this process significantly reduces productivity and increases production costs. Therefore, it is necessary to set the annealing temperature to 900 ° C. or lower. Preferably, the temperature range is from a temperature 150 ° C. lower than the end temperature of hot working to the end temperature.
[0014]
The reason why the cold rolling rate is 40% or more is that if it is less than 40%, it is necessary to increase the annealing temperature for recrystallization, and fine crystal grains cannot be obtained during recrystallization.
The reason why the recrystallization annealing temperature after cold rolling is set to 500 ° C. or lower is that when annealing is performed at a temperature exceeding 500 ° C., the recrystallized grains become coarse.
Preferably, hot working is performed between 850 and 500 ° C., followed by annealing at 350 to 500 ° C. Thereafter, cold rolling is performed at 80% or more, and finally annealing for recrystallization is performed at 200 to 450 ° C.
[0015]
【Example】
Examples of the present invention are shown below.
The copper ingot shown in Table 1 was hot worked and annealed under the conditions shown in Table 2, followed by cold rolling and then recrystallization annealing.
The obtained target material was machined with a diameter of 300 mm and a thickness of 4 mm to obtain a target for DC magnetron sputtering.
Using the obtained target, sputtering was performed on a silicon substrate at an ultimate vacuum of 5 × (10 to the fifth power) Pa, an argon pressure of 0.3 Pa, and a supply power of 15 W / cm 2 .
[0016]
[Table 1]
[Table 2]
The evaluation used the bottom coverage rate as an index for the directionality of the sputtered particles. This bottom coverage was calculated from the ratio of the difference between the top film thickness and the bottom film thickness when the film was formed in a contact hole having a hole diameter of 0.5 μm and an aspect ratio of 1.5.
That is, a high value of the bottom coverage rate indicates that more sputtered particles have reached the bottom of the contact hole, and means that the directionality of the sputtered particles is uniform.
Further, the foreign matters resulting from the generation of coarse clusters were evaluated by the number of occurrences of 0.3 μm or more in a 6-inch wafer.
The evaluation results are shown in Table 3.
[Table 3]
As can be seen from Table 3, a sample No. having an average crystal grain size and hardness within the scope of the present invention was used. In 5, 6 and 7, the bottom coverage is 20% or more, and the directionality of the sputtered particles is uniform. In particular, No. having an average crystal grain size of 30 μm or less. No. 5 shows a very good straightness of 26%. In addition, the number of foreign matters is 10 or less, and the number of foreign matters is very small.
On the other hand, Sample No. which could not be recrystallized. 1 and no. 2 shows that the bottom coverage is low and the directionality of the sputtered particles is not uniform.
In addition, Sample No. with an annealing temperature after hot rolling higher than the range of the present invention. No. 3 shows that recrystallization does not occur uniformly, coarse crystal grains outside the scope of the present invention are generated, sufficient bottom coverage cannot be obtained, and the directionality of sputtered particles is not uniform.
[0021]
Since the cold rolling rate was 35% lower and the annealing temperature after cold rolling was higher, sample No. No. 1 was obtained with coarse crystal grains. In No. 4, no. Similar to 3, the bottom coverage rate is as low as 17%. Furthermore, it turns out that the number of foreign materials is as large as 13.
FIG. 1 shows a sample having a uniform fine microstructure according to the present invention. Fig. 5 shows the structural photographs of 5.
2 is a sample No. 1 in which the microstructure of the comparative example is uneven and coarse. The structure photograph of 3 is shown.
[0022]
【The invention's effect】
The copper target for semiconductor wiring and the method for manufacturing the same of the present invention can efficiently form a film and improve the yield when the copper wiring required for increasing the speed and miniaturization of the semiconductor is performed by sputtering. This is a very important invention in the semiconductor industry.
[Brief description of the drawings]
FIG. 1 is a 400-times microstructure photograph of a target of the present invention.
FIG. 2 is a photograph of a microstructure of 25 times that of a target of a comparative example.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34425497A JP3975414B2 (en) | 1997-11-28 | 1997-11-28 | Sputtering copper target and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34425497A JP3975414B2 (en) | 1997-11-28 | 1997-11-28 | Sputtering copper target and method for producing the same |
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| Publication Number | Publication Date |
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| JPH11158614A JPH11158614A (en) | 1999-06-15 |
| JP3975414B2 true JP3975414B2 (en) | 2007-09-12 |
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| JP34425497A Expired - Lifetime JP3975414B2 (en) | 1997-11-28 | 1997-11-28 | Sputtering copper target and method for producing the same |
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Families Citing this family (30)
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| KR100700885B1 (en) * | 2003-03-17 | 2007-03-29 | 닛코킨조쿠 가부시키가이샤 | Copper alloy sputtering target process for producing the same and semiconductor element wiring |
| WO2005019493A2 (en) * | 2003-08-11 | 2005-03-03 | Honeywell International Inc. | Target/backing plate constructions, and methods of forming them |
| WO2006103833A1 (en) * | 2005-03-28 | 2006-10-05 | Nippon Mining & Metals Co., Ltd. | Deep-pot-shaped copper sputtering target and process for producing the same |
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- 1997-11-28 JP JP34425497A patent/JP3975414B2/en not_active Expired - Lifetime
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