SG11201901245WA - Chalcogenide sputtering target and method of making the same - Google Patents

Chalcogenide sputtering target and method of making the same

Info

Publication number
SG11201901245WA
SG11201901245WA SG11201901245WA SG11201901245WA SG11201901245WA SG 11201901245W A SG11201901245W A SG 11201901245WA SG 11201901245W A SG11201901245W A SG 11201901245WA SG 11201901245W A SG11201901245W A SG 11201901245WA SG 11201901245W A SG11201901245W A SG 11201901245WA
Authority
SG
Singapore
Prior art keywords
international
august
pct
sputtering target
primary matrix
Prior art date
Application number
SG11201901245WA
Inventor
Michael R Pinter
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of SG11201901245WA publication Critical patent/SG11201901245WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/653—Processes involving a melting step
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Prostheses (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) - (19) World Intellectual Property Organization - - 111111101111011101 HRH 1101010111111111011111101011011110111 OEN ' International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2018/038910 Al 01 March 2018 (01.03.2018) WIP0 I PCT (51) (21) (22) International Patent Classification: CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, C23C 14/06 (2006.01) C22C 1/05 (2006.01) DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, C23C 14/34 (2006.01) HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, International Application Number: KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, PCT/US2017/045895 MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, International Filing Date: SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, 08 August 2017 (08.08.2017) TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (25) Filing Language: English (84) Designated States (unless otherwise indicated, for every (26) Publication Language: English kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, (30) (71) Priority Data: UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, 62/378,031 22 August 2016 (22.08.2016) US TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, 15/670,487 07 August 2017 (07.08.2017) US EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, Applicant: HONEYWELL INTERNATIONAL INC. TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, [US/US]; Intellectual Property-Patent Services, 115 Tabor KM, ML, MR, NE, SN, TD, TG). Road, M/S 4D3, P. 0. Box 377, Morris Plains, New Jersey 07950 (US). Published: — (72) Inventor: PINTER, Michael R.; Honeywell International — with international search report (Art. 21(3)) _ INC., 115 Tabor Road, M/S 4D3 , P. 0. Box 377, Morris Plains, New Jersey 07950 (US). = Agent: COX, Adam, F.; Faegre Baker Daniels LLP, 2200 = (74) Wells Fargo Center, 90 South Seventh Street, Minneapolis, _ = Minnesota 55402 (US). Designated States (unless otherwise indicated, for every = (81) kind of national protection available): AE, AG, AL, AM, _ _ _ AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = Title: CHALCOGENIDE SPUTTERING TARGET AND METHOD OF MAKING THE SAME — (54) (57) : In one embodiment, a physical vapor deposition device in- = = ,...,7 , -----------w dudes a phase change material sputtering target includes a primary matrix „:„ .: 1100 pm iiN , g and at least one additional The primary matrix includes at least one ,,, phase. — , t. = „, element from Group VI of the periodic table excluding oxygen and one , or more elements from Group IV or roup V of the periodic table. The — = ,s „: s , additional phase is substantially homogenously dispersed in the primary matrix. = 0 M , = _ „ z. ., . ,z , Ns: — 11 © ,-1 c: co en , . , , .: : ,, J w ,-1 ,..=:, ei FIG. .3 0
SG11201901245WA 2016-08-22 2017-08-08 Chalcogenide sputtering target and method of making the same SG11201901245WA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662378031P 2016-08-22 2016-08-22
US15/670,487 US10889887B2 (en) 2016-08-22 2017-08-07 Chalcogenide sputtering target and method of making the same
PCT/US2017/045895 WO2018038910A1 (en) 2016-08-22 2017-08-08 Chalcogenide sputtering target and method of making the same

Publications (1)

Publication Number Publication Date
SG11201901245WA true SG11201901245WA (en) 2019-03-28

Family

ID=61191346

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201901245WA SG11201901245WA (en) 2016-08-22 2017-08-08 Chalcogenide sputtering target and method of making the same

Country Status (10)

Country Link
US (2) US10889887B2 (en)
EP (1) EP3500690A4 (en)
JP (1) JP6883103B2 (en)
KR (1) KR102267757B1 (en)
CN (1) CN109563613B (en)
BR (1) BR112019002380A2 (en)
MX (1) MX2019001539A (en)
SG (1) SG11201901245WA (en)
TW (1) TWI750210B (en)
WO (1) WO2018038910A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10889887B2 (en) 2016-08-22 2021-01-12 Honeywell International Inc. Chalcogenide sputtering target and method of making the same
CN109371371A (en) * 2018-12-10 2019-02-22 有研工程技术研究院有限公司 A kind of preparation method of selenium arsenic germanium multi-component Alloy Sputtering target
JP2020176297A (en) * 2019-04-17 2020-10-29 ソニーセミコンダクタソリューションズ株式会社 Sputtering target and method for producing the same, and method for producing memory device
US11271155B2 (en) * 2020-03-10 2022-03-08 International Business Machines Corporation Suppressing oxidation of silicon germanium selenium arsenide material
US20220123209A1 (en) * 2020-10-16 2022-04-21 Macronix International Co., Ltd. SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES
CN117980277A (en) * 2021-07-02 2024-05-03 肖特公司 High uniformity glass sputter targets with high aspect ratio and high relative density for physical vapor deposition

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT383758B (en) * 1985-12-23 1987-08-25 Plansee Metallwerk METHOD FOR PRODUCING A SPUTTER TARGET
US5958103A (en) 1995-03-06 1999-09-28 Hoya Corporation Process for producing preform for glass fiber and process for producing glass fiber
JP3885897B2 (en) 1996-04-16 2007-02-28 古河機械金属株式会社 Method for producing silicon sulfide
US6015765A (en) 1997-12-24 2000-01-18 The United States Of America As Represented By The Secretary Of The Navy Rare earth soluble telluride glasses
JP3703648B2 (en) 1999-03-16 2005-10-05 山陽特殊製鋼株式会社 Method for producing Ge-Sb-Te based sputtering target material
DE10017414A1 (en) * 2000-04-07 2001-10-11 Unaxis Materials Deutschland G Sputtering target based on a metal or a metal alloy and method for the production thereof
JP2001342505A (en) 2000-05-31 2001-12-14 Sanyo Special Steel Co Ltd Low melting point target material and its production method
US6682636B2 (en) * 2000-08-18 2004-01-27 Honeywell International Inc. Physical vapor deposition targets and methods of formation
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
US6503859B1 (en) 2001-06-28 2003-01-07 Corning Incorporated Molecular, inorganic glasses
WO2003071531A1 (en) 2002-02-25 2003-08-28 Nikko Materials Company, Limited Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
US6874335B2 (en) 2002-04-12 2005-04-05 Micron Technology, Inc. Large scale synthesis of germanium selenide glass and germanium selenide glass compounds
US20040040837A1 (en) 2002-08-29 2004-03-04 Mcteer Allen Method of forming chalcogenide sputter target
JP3850783B2 (en) 2002-10-08 2006-11-29 Ｔｄｋ株式会社 Phase change material target and manufacturing method thereof
US6984598B1 (en) 2003-07-02 2006-01-10 Amorphous Materials, Inc. Infrared chalcogenide glass
JP4300328B2 (en) 2003-07-03 2009-07-22 三菱マテリアル株式会社 Sputtering target for phase change recording film
TWI365914B (en) * 2003-07-03 2012-06-11 Mitsubishi Materials Corp Phase change recording film having high electrical resistance and sputtering target for forming phase change recording film
WO2005012591A1 (en) * 2003-08-05 2005-02-10 Nikko Materials Co., Ltd. Sputtering target and method for production thereof
JP2005117031A (en) 2003-09-17 2005-04-28 Mitsubishi Materials Corp Phase-change film for semiconductor nonvolatile memory, and sputtering target for forming the film
US7418835B2 (en) 2004-04-15 2008-09-02 The United States Of America As Represented By The Secretary Of The Navy Low loss chalcogenide glass and process for making same using arsenic monochalcogenide
JP2006245251A (en) 2005-03-03 2006-09-14 Mitsubishi Materials Corp Phase change recording film with stable amorphous state, and sputtering target for forming it
US20070099332A1 (en) * 2005-07-07 2007-05-03 Honeywell International Inc. Chalcogenide PVD components and methods of formation
US20070007505A1 (en) * 2005-07-07 2007-01-11 Honeywell International Inc. Chalcogenide PVD components
CN1825649B (en) 2006-01-18 2011-07-20 中国科学院上海微系统与信息技术研究所 Heating electrode material for phase transformation memory and preparing method
WO2008021604A2 (en) 2006-05-19 2008-02-21 Purdue Research Foundation Rapid synthesis of ternary, binary and multinary chalcogenide nanoparticles
JP2008044626A (en) 2006-08-11 2008-02-28 Dainippon Printing Co Ltd Paper-made electromagnetic wave transmitting packing material and packing method
FR2906160B1 (en) 2006-09-25 2009-06-05 Air Liquide PSA METHOD WITH COMPOSITE ADSORPTION BED FORMED OF ADSORBENT AND AGGLOMERATS OF MCP
JP4965579B2 (en) 2006-10-13 2012-07-04 Ｊｘ日鉱日石金属株式会社 Sb-Te based alloy sintered compact sputtering target
US20080112878A1 (en) 2006-11-09 2008-05-15 Honeywell International Inc. Alloy casting apparatuses and chalcogenide compound synthesis methods
KR101175091B1 (en) 2007-09-13 2012-08-21 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Method for producing sintered body, sintered body, sputtering target composed of the sintered body, and sputtering target-backing plate assembly
US20090107834A1 (en) 2007-10-29 2009-04-30 Applied Materials, Inc. Chalcogenide target and method
JP2009249641A (en) 2008-04-01 2009-10-29 Mitsubishi Materials Corp Sputtering target for forming phase change film with reduced generation of particle, and method for producing the same
US7767604B2 (en) 2008-04-29 2010-08-03 Corning Incorporated Ga—P—S glass compositions
WO2009134989A2 (en) 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Antimony compounds useful for deposition of antimony-containing materials
CN101299454B (en) 2008-06-13 2011-05-04 中国科学院上海微系统与信息技术研究所 Method for preparing nano composite phase-changing material
US8277677B2 (en) 2008-06-23 2012-10-02 Northwestern University Mechanical strength and thermoelectric performance in metal chalcogenide MQ (M=Ge,Sn,Pb and Q=S, Se, Te) based compositions
CN102077309B (en) 2008-06-26 2013-11-27 日本梅克特隆株式会社 Key module of portable apparatus
KR20100009455A (en) 2008-07-18 2010-01-27 삼성전자주식회사 Thermoelectric materials and chalcogenide compounds
US8206804B2 (en) 2008-08-29 2012-06-26 Corning Incorporated Phase change memory materials
US7693388B1 (en) 2008-09-15 2010-04-06 The United States Of America As Represented By The Secretary Of The Navy Thermally stable IR transmitting chalcogenide glass
US20100108503A1 (en) 2008-10-31 2010-05-06 Applied Quantum Technology, Llc Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same
US8148707B2 (en) 2008-12-30 2012-04-03 Stmicroelectronics S.R.L. Ovonic threshold switch film composition for TSLAGS material
EP2436799B1 (en) * 2009-05-27 2014-02-26 JX Nippon Mining & Metals Corporation Sintered target.
US8524362B2 (en) 2009-08-14 2013-09-03 Rensselaer Polytechnic Institute Doped pnictogen chalcogenide nanoplates, methods of making, and assemblies and films thereof
JP2011136120A (en) 2009-12-30 2011-07-14 Michiko Makino Incense stick cleaning bar
US8193027B2 (en) 2010-02-23 2012-06-05 Air Products And Chemicals, Inc. Method of making a multicomponent film
JP4831258B2 (en) 2010-03-18 2011-12-07 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
WO2011136120A1 (en) 2010-04-26 2011-11-03 Jx日鉱日石金属株式会社 Sb-te based alloy sintered compact sputtering target
CN103108977B (en) * 2010-09-27 2015-01-21 吉坤日矿日石金属株式会社 Cu-In-Ga-Se quaternary alloy sputtering target
CN102086030B (en) 2010-11-25 2013-03-06 清远先导材料有限公司 Method for preparing arsenic selenide granules
FR2968298B1 (en) 2010-12-06 2015-11-13 Centre Nat Rech Scient PROCESS FOR OBTAINING VITREOUS MATERIAL AND OPTICALLY TRANSPARENT IN INFRARED, AND OPTICAL DEVICE COMPRISING SUCH MATERIAL
WO2013068601A1 (en) 2011-11-10 2013-05-16 Universiteit Gent Synthesis of nanomaterials
US9209374B2 (en) 2012-03-28 2015-12-08 Evident Technologies, Inc. Method for preparing and use of Sb2Te3 nanocrystals in thermoelectric materials
US9573809B2 (en) 2012-03-30 2017-02-21 Micron Technology, Inc. Method of forming a metal chalcogenide material and methods of forming memory cells including same
US9496491B2 (en) 2012-05-21 2016-11-15 Micron Technology, Inc. Methods of forming a metal chalcogenide material and related methods of forming a memory cell
WO2014009815A2 (en) 2012-07-09 2014-01-16 Nanoco Technologies, Ltd. Group xiii selenide nanoparticles
US10752514B2 (en) 2012-09-07 2020-08-25 Cornell University Metal chalcogenide synthesis method and applications
KR20140002901U (en) 2012-11-08 2014-05-16 한밭대학교 산학협력단 Chalcogenide glass
CN103898452B (en) 2012-12-26 2017-03-15 北京有色金属研究总院 A kind of phase change memory Sb Te W phase transformation targets and preparation method thereof
CN103232161B (en) 2013-05-03 2015-11-04 中国建筑材料科学研究总院 A kind of preparation method of Ge-Sb-Se system IR glass and equipment
CN103320750B (en) 2013-06-21 2015-04-01 成都先锋材料有限公司 Method for producing sputtering target material of germanium-antimony-tellurium compound phase change material
CN103320749B (en) * 2013-06-21 2015-04-01 成都先锋材料有限公司 Production method of sputtering target material for metal chalcogenide phase-change materials
JP5668819B2 (en) 2013-09-19 2015-02-12 ソニー株式会社 Memory manufacturing method
CN104576925B (en) 2013-10-22 2017-05-10 吉林师范大学 Method for preparing nano bowl-shaped phase change memory unit
JP6291236B2 (en) 2013-12-05 2018-03-14 国立大学法人信州大学 Crystal growth accelerator and method for producing chalcogenide compound using the same
CN104926119A (en) 2014-03-21 2015-09-23 徐州斯梅尔光电科技有限公司 High performance infrared chalcogenide glass and preparation method thereof
CN103979792B (en) 2014-04-25 2016-01-06 宁波大学 Chalcogenide glass of a kind of gold doping and preparation method thereof
US9708210B2 (en) 2014-06-03 2017-07-18 The United States Of America, As Represented By The Secretary Of The Navy Striae-free chalcogenide glasses
CN104402220B (en) 2014-11-10 2017-02-22 湖北新华光信息材料有限公司 Sulfur optical glass
KR101723062B1 (en) 2014-11-18 2017-04-04 주식회사 엘지화학 Metal Calcogenide Nano Particle for Manufacturing Light Absorbing Layer of Solar Cell and Method for Manufacturing the Same
US20160181515A1 (en) 2014-12-18 2016-06-23 Stmicroelectronics S.R.I. Embedded phase change memory devices and related methods
KR20170125866A (en) 2015-03-10 2017-11-15 허니웰 인터내셔널 인코포레이티드 How to purify and cast materials
US9379321B1 (en) 2015-03-20 2016-06-28 Intel Corporation Chalcogenide glass composition and chalcogenide switch devices
CN104843996A (en) 2015-04-23 2015-08-19 宁波鼎创红外精密光学科技有限公司 Environmentally friendly low-dispersion chalcogenide glass and preparation method thereof
CN106611814B (en) 2015-10-23 2020-05-05 中国科学院上海微系统与信息技术研究所 Phase change material for phase change memory and preparation method thereof
CN105541111A (en) 2015-12-16 2016-05-04 宁波大学 Far-infrared high-nonlinear Ge-Te-Se chalcogenide glass and preparation method thereof
CN106206942B (en) 2016-07-30 2018-09-18 江苏理工学院 GeSb nano thin-films of rare earth Er doping vario-property and preparation method thereof
CN106449972B (en) 2016-08-02 2019-04-16 同济大学 A kind of Ti-Sb nano phase change thin-film material and its preparation method and application
US10889887B2 (en) 2016-08-22 2021-01-12 Honeywell International Inc. Chalcogenide sputtering target and method of making the same
CN106299113A (en) 2016-08-22 2017-01-04 中国科学院上海微系统与信息技术研究所 Ge Sb Se phase-change material, phase-changing memory unit and preparation method thereof
CN106229409B (en) 2016-09-26 2019-01-22 江苏理工学院 A kind of Er-Se-Sb nano phase change thin-film material and its preparation method and application
CN106374043A (en) 2016-09-26 2017-02-01 江苏理工学院 Si-Sb-Se nano phase-change thin film material and preparation method and application thereof
CN106374042A (en) 2016-09-26 2017-02-01 江苏理工学院 Nitrogen-doped Sb nano phase change thin film material and preparation method and application thereof
CN106374045B (en) 2016-10-28 2018-09-21 广东石油化工学院 A kind of thin-film device based on GeSbTe phase-change materials
CN106758163A (en) 2016-11-09 2017-05-31 江南大学 The infrared stealth fabric and preparation method of a kind of multi-layer compound structure
CN106601908A (en) 2016-12-16 2017-04-26 同济大学 Antimony-germanium multilayer nano-composite phase-change material and preparation and application thereof

Also Published As

Publication number Publication date
KR20190039113A (en) 2019-04-10
US20210095370A1 (en) 2021-04-01
JP6883103B2 (en) 2021-06-09
US11946132B2 (en) 2024-04-02
JP2019529718A (en) 2019-10-17
MX2019001539A (en) 2019-05-09
EP3500690A1 (en) 2019-06-26
CN109563613A (en) 2019-04-02
US20180051370A1 (en) 2018-02-22
TW201817903A (en) 2018-05-16
BR112019002380A2 (en) 2019-06-04
US10889887B2 (en) 2021-01-12
CN109563613B (en) 2021-11-19
WO2018038910A1 (en) 2018-03-01
KR102267757B1 (en) 2021-06-24
EP3500690A4 (en) 2020-04-22
TWI750210B (en) 2021-12-21

Similar Documents

Publication Publication Date Title
SG11201901245WA (en) Chalcogenide sputtering target and method of making the same
SG11201809857TA (en) Anti-CTLA-4 Antibodies
SG11201807252QA (en) Anti-lag-3 antibodies
SG11201804758QA (en) Aqueous pharmaceutical formulation comprising anti-pd-1 antibody avelumab
SG11201908604YA (en) Fused imidazo-piperidine jak inhibitor compound
SG11201909018VA (en) Crystal form of 6-(cyclopropanecarboxamido)-4-((2-methoxy-3-(1-methyl-1h-1,2,4-triazol-3-yl)phenyl)amino)-n-(methyl-d3) pyridazine-3-carboxamide
SG11201906795SA (en) Novel plant cells, plants, and seeds
SG11201808708RA (en) Heterocyclic amides useful as protein modulators
SG11201805493YA (en) Binding members with altered diversity scaffold domains
SG11201909683YA (en) Delivery apparatus for a prosthetic heart valve
SG11201810983PA (en) Novel heterocyclic derivatives useful as shp2 inhibitors
SG11201807784SA (en) 3-desoxy derivative and pharmaceutical compositions thereof
SG11201900554YA (en) Spiro-lactam nmda modulators and methods of using same
SG11201908326YA (en) Methods of treating neurodegenerative diseases
SG11201407800SA (en) Selective binding of biological targets to solid phase ureides
SG11201809594WA (en) Nicotine particles and compositions
SG11201806284TA (en) Low pressure separator having an internal divider and uses therefor
SG11201907804QA (en) Pharmaceutical composition comprising selexipag
SG11201910115XA (en) Rnai approach for crop pest protection
SG11201809620UA (en) The contorsbody - a single chain target binder
SG11201804223TA (en) OCTAHYDROPYRROLO [3, 4-c] PYRROLE DERIVATIVES AND USES THEREOF
SG11201805204WA (en) Nicotine particle capsule
SG11201907948TA (en) Formulations comprising pd-1 binding proteins and methods of making thereof
SG11201903012RA (en) Anti-c1s antibodies and methods of use thereof
SG11201908918WA (en) Novel pyridazinone herbicides