SG11201800197TA - Negative photoresist composition for krf laser for forming semiconductor patterns - Google Patents
Negative photoresist composition for krf laser for forming semiconductor patternsInfo
- Publication number
- SG11201800197TA SG11201800197TA SG11201800197TA SG11201800197TA SG11201800197TA SG 11201800197T A SG11201800197T A SG 11201800197TA SG 11201800197T A SG11201800197T A SG 11201800197TA SG 11201800197T A SG11201800197T A SG 11201800197TA SG 11201800197T A SG11201800197T A SG 11201800197TA
- Authority
- SG
- Singapore
- Prior art keywords
- photoresist composition
- negative photoresist
- semiconductor patterns
- forming semiconductor
- krf laser
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150103727A KR101615980B1 (en) | 2015-07-22 | 2015-07-22 | KrF LASER NEGATIVE-WORKING PHOTORESIST COMPOSITION FOR SEMICONDUCTOR PATTERNING |
| PCT/KR2016/006820 WO2017014438A1 (en) | 2015-07-22 | 2016-06-27 | Negative photoresist composition for krf laser for forming semiconductor patterns |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201800197TA true SG11201800197TA (en) | 2018-02-27 |
Family
ID=55915906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201800197TA SG11201800197TA (en) | 2015-07-22 | 2016-06-27 | Negative photoresist composition for krf laser for forming semiconductor patterns |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10162261B2 (en) |
| JP (1) | JP6603789B2 (en) |
| KR (1) | KR101615980B1 (en) |
| CN (1) | CN107850841B (en) |
| SG (1) | SG11201800197TA (en) |
| WO (1) | WO2017014438A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101598826B1 (en) * | 2015-08-28 | 2016-03-03 | 영창케미칼 주식회사 | I-line negative-working photoresist composition for improving etching resistance |
| KR101877029B1 (en) * | 2016-05-13 | 2018-07-11 | 영창케미칼 주식회사 | Chemical amplified type negative resist composition |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5215856A (en) * | 1989-09-19 | 1993-06-01 | Ocg Microelectronic Materials, Inc. | Tris-(hydroxyphenyl) lower alkane compounds as sensitivity enhancers for o-quinonediazide containing radiation-sensitive compositions and elements |
| US5238775A (en) * | 1990-02-20 | 1993-08-24 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition |
| HUT58266A (en) * | 1990-08-31 | 1992-02-28 | Hoechst Celanese Corp | Acrylic esters of 1,1,1-tris/hydroxy-phenyl/-ethane, process for producing them, utilizing them as monofunctional polymerizable monomere and homo-and copolymeres from them |
| US5130467A (en) * | 1990-08-31 | 1992-07-14 | Hoechst Celanese Corporation | Acrylate esters of 1,1,1-trishydroxyphenylethane |
| JPH0667413A (en) | 1992-08-20 | 1994-03-11 | Sumitomo Chem Co Ltd | Negative type photoresist composition |
| US5612164A (en) * | 1995-02-09 | 1997-03-18 | Hoechst Celanese Corporation | Positive photoresist composition comprising a mixed ester of trishydroxyphenyl ethane and a mixed ester of trihydroxybenzophenone |
| JP2003171420A (en) * | 2001-12-06 | 2003-06-20 | Fuji Photo Film Co Ltd | Photopolymerizable composition |
| KR100718922B1 (en) * | 2001-12-20 | 2007-05-16 | 주식회사 코오롱 | Dry film photoresist composition |
| JP4614089B2 (en) * | 2005-11-17 | 2011-01-19 | 信越化学工業株式会社 | Negative resist material and pattern forming method |
| JP2008088299A (en) * | 2006-10-02 | 2008-04-17 | Mitsubishi Rayon Co Ltd | Resin composition, method for producing cured product, and laminate |
| JP5010941B2 (en) * | 2007-02-20 | 2012-08-29 | 富士フイルム株式会社 | Curable composition and method for producing cured film using the same |
| JP2009009110A (en) * | 2007-05-30 | 2009-01-15 | Sumitomo Bakelite Co Ltd | Photosensitive adhesive resin composition, adhesive film and light-receiving device |
| KR101404978B1 (en) * | 2007-08-21 | 2014-06-10 | 주식회사 동진쎄미켐 | A negative photosensitive composition for forming a pattern |
| US20090068574A1 (en) * | 2007-09-11 | 2009-03-12 | Toppan Printing Co., Ltd. | Substrate with bank, and substrate with color pattern |
| KR20090066161A (en) * | 2007-12-18 | 2009-06-23 | 주식회사 동진쎄미켐 | Photosensitive compound and photoresist composition including the same |
| JP5423004B2 (en) * | 2009-01-08 | 2014-02-19 | 東レ株式会社 | Negative photosensitive resin composition and touch panel material using the same |
| US20140330031A1 (en) * | 2011-12-05 | 2014-11-06 | Council Of Scientific & Industrial Research | Resist for electron beam and optical lithography |
| JP6315204B2 (en) | 2012-10-02 | 2018-04-25 | 日産化学工業株式会社 | Negative photosensitive resin composition |
| JP6327066B2 (en) | 2013-09-03 | 2018-05-23 | 住友化学株式会社 | Compound, resin, resist composition, and method for producing resist pattern |
| TWI610925B (en) | 2013-10-24 | 2018-01-11 | 住友化學股份有限公司 | Salt and photoresist composition comprising the same |
| US20160362567A1 (en) * | 2013-11-28 | 2016-12-15 | Jnc Corporation | Photocurable inkjet ink |
| JP6267951B2 (en) * | 2013-12-18 | 2018-01-24 | 富士フイルム株式会社 | Photosensitive transfer material, pattern forming method and etching method |
| JP5981465B2 (en) * | 2014-01-10 | 2016-08-31 | 信越化学工業株式会社 | Negative resist material and pattern forming method using the same |
| CN103901725B (en) * | 2014-04-19 | 2017-07-28 | 长兴电子（苏州）有限公司 | A kind of light curing resin composition |
| CN104402778B (en) * | 2014-12-03 | 2017-04-05 | 青岛蓝帆新材料有限公司 | A kind of acrylamide derivative of benzyl sulfonamide substitutions |
| KR101598826B1 (en) * | 2015-08-28 | 2016-03-03 | 영창케미칼 주식회사 | I-line negative-working photoresist composition for improving etching resistance |
-
2015
- 2015-07-22 KR KR1020150103727A patent/KR101615980B1/en active IP Right Grant
-
2016
- 2016-06-27 SG SG11201800197TA patent/SG11201800197TA/en unknown
- 2016-06-27 JP JP2018500782A patent/JP6603789B2/en active Active
- 2016-06-27 WO PCT/KR2016/006820 patent/WO2017014438A1/en active Application Filing
- 2016-06-27 US US15/744,667 patent/US10162261B2/en active Active
- 2016-06-27 CN CN201680043047.3A patent/CN107850841B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018522278A (en) | 2018-08-09 |
| KR101615980B1 (en) | 2016-04-29 |
| US10162261B2 (en) | 2018-12-25 |
| US20180203351A1 (en) | 2018-07-19 |
| CN107850841A (en) | 2018-03-27 |
| JP6603789B2 (en) | 2019-11-06 |
| WO2017014438A1 (en) | 2017-01-26 |
| CN107850841B (en) | 2021-04-02 |
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