SG11201710396UA - Repeller for ion implanter, cathode, chamber wall, slit member, and ion generating device comprising same - Google Patents

Repeller for ion implanter, cathode, chamber wall, slit member, and ion generating device comprising same

Info

Publication number
SG11201710396UA
SG11201710396UA SG11201710396UA SG11201710396UA SG11201710396UA SG 11201710396U A SG11201710396U A SG 11201710396UA SG 11201710396U A SG11201710396U A SG 11201710396UA SG 11201710396U A SG11201710396U A SG 11201710396UA SG 11201710396U A SG11201710396U A SG 11201710396UA
Authority
SG
Singapore
Prior art keywords
ion
repeller
cathode
generating device
same
Prior art date
Application number
SG11201710396UA
Inventor
Kyou Tae Hwang
Kyoung Tae Lim
Sung Kyun Kim
Original Assignee
Value Eng Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020150096701A external-priority patent/KR101582640B1/en
Priority claimed from KR1020150096700A external-priority patent/KR101582631B1/en
Priority claimed from KR1020150096699A external-priority patent/KR101565916B1/en
Priority claimed from KR1020150096702A external-priority patent/KR101582645B1/en
Application filed by Value Eng Ltd filed Critical Value Eng Ltd
Publication of SG11201710396UA publication Critical patent/SG11201710396UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
    • H01J5/02—Vessels; Containers; Shields associated therewith; Vacuum locks
    • H01J5/08—Vessels; Containers; Shields associated therewith; Vacuum locks provided with coatings on the walls thereof; Selection of materials for the coatings
    • H01J5/10—Vessels; Containers; Shields associated therewith; Vacuum locks provided with coatings on the walls thereof; Selection of materials for the coatings on internal surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Combustion & Propulsion (AREA)
  • Health & Medical Sciences (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
SG11201710396UA 2015-07-07 2016-06-10 Repeller for ion implanter, cathode, chamber wall, slit member, and ion generating device comprising same SG11201710396UA (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020150096701A KR101582640B1 (en) 2015-07-07 2015-07-07 Chamber wall for ion implanter and ion generation device
KR1020150096700A KR101582631B1 (en) 2015-07-07 2015-07-07 Cathode for ion implanter and ion generation device
KR1020150096699A KR101565916B1 (en) 2015-07-07 2015-07-07 Repeller for ion implanter and ion generation device
KR1020150096702A KR101582645B1 (en) 2015-07-07 2015-07-07 Silt membrane for ion implanter and ion generation device
PCT/KR2016/006190 WO2017007138A1 (en) 2015-07-07 2016-06-10 Repeller for ion implanter, cathode, chamber wall, slit member, and ion generating device comprising same

Publications (1)

Publication Number Publication Date
SG11201710396UA true SG11201710396UA (en) 2018-01-30

Family

ID=57685816

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201710396UA SG11201710396UA (en) 2015-07-07 2016-06-10 Repeller for ion implanter, cathode, chamber wall, slit member, and ion generating device comprising same

Country Status (6)

Country Link
US (2) US10573486B2 (en)
EP (1) EP3316277A4 (en)
JP (1) JP6539414B2 (en)
CN (1) CN107735850B (en)
SG (1) SG11201710396UA (en)
WO (1) WO2017007138A1 (en)

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* Cited by examiner, † Cited by third party
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US10269530B1 (en) * 2017-11-29 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Ion beam source for semiconductor ion implantation
US10854416B1 (en) * 2019-09-10 2020-12-01 Applied Materials, Inc. Thermally isolated repeller and electrodes
WO2021130805A1 (en) * 2019-12-23 2021-07-01 株式会社日立ハイテク Charged particle beam device
CN111029235B (en) * 2019-12-25 2022-05-27 上海华力集成电路制造有限公司 Structure of ion source head in ion implantation machine
US11127558B1 (en) 2020-03-23 2021-09-21 Applied Materials, Inc. Thermally isolated captive features for ion implantation systems
US12033843B2 (en) * 2020-03-26 2024-07-09 Agilent Technologies, Inc. Mass spectrometry ION source
US11251010B1 (en) * 2021-07-27 2022-02-15 Applied Materials, Inc. Shaped repeller for an indirectly heated cathode ion source

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US4892752A (en) * 1987-08-12 1990-01-09 Oki Electric Industry Co., Ltd. Method of ion implantation
JPH01255140A (en) * 1988-04-05 1989-10-12 Denki Kagaku Kogyo Kk Arc chamber for ion source
US20020069824A1 (en) * 2000-12-08 2002-06-13 Dangelo Nelson A. Ion implantation system having increased implanter source life
KR100528240B1 (en) 2000-12-20 2005-11-15 현대중공업 주식회사 For the manufacturing of the rotor including radial calling duct made by low melting point metal, centrifugal separation method of low melting point metal space from a rotor
JP3654236B2 (en) * 2001-11-07 2005-06-02 株式会社日立製作所 Electrode device manufacturing method
KR20030060611A (en) * 2002-01-10 2003-07-16 삼성전자주식회사 Field emitter device comprising carbon nanotube with protective membrane
DE10204182B4 (en) 2002-02-01 2005-07-14 Man B & W Diesel Ag Internal combustion engine and method for its operation
JP4135499B2 (en) 2002-12-27 2008-08-20 日本電気株式会社 Positioning system and positioning method in mobile communication system
KR100561491B1 (en) * 2003-11-10 2006-03-20 일진다이아몬드(주) Plate field emission device with coating layer
KR100668332B1 (en) * 2004-02-25 2007-01-12 삼성전자주식회사 Fabrication method of device comprising carbide and nitride nano electron emitters
US7465210B2 (en) * 2004-02-25 2008-12-16 The Regents Of The University Of California Method of fabricating carbide and nitride nano electron emitters
EP1876592A1 (en) 2005-04-13 2008-01-09 FUJIFILM Corporation Optical recording medium and its manufacturing method
JP5152887B2 (en) 2006-07-07 2013-02-27 学校法人関西学院 Surface modification method for single crystal silicon carbide substrate, method for forming single crystal silicon carbide thin film, ion implantation annealing method, single crystal silicon carbide substrate, single crystal silicon carbide semiconductor substrate
US7679070B2 (en) * 2007-07-02 2010-03-16 United Microelectronics Corp. Arc chamber for an ion implantation system
KR100855540B1 (en) 2007-07-10 2008-09-01 주식회사 코미코 Ion implanter, inner structure of ino implater and method of forming a coating layer on the ion implanter
US8476587B2 (en) * 2009-05-13 2013-07-02 Micromass Uk Limited Ion source with surface coating
US8471198B2 (en) * 2009-05-13 2013-06-25 Micromass Uk Limited Mass spectrometer sampling cone with coating
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US8937003B2 (en) * 2011-09-16 2015-01-20 Varian Semiconductor Equipment Associates, Inc. Technique for ion implanting a target
KR20130104585A (en) * 2012-03-14 2013-09-25 삼성전자주식회사 Ion source and ion implanter having the same
JP5925084B2 (en) 2012-08-28 2016-05-25 住友重機械イオンテクノロジー株式会社 Ion generation method and ion source
JP6076838B2 (en) * 2013-05-31 2017-02-08 住友重機械イオンテクノロジー株式会社 Insulation structure and insulation method
US9384937B2 (en) * 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
JP6238689B2 (en) * 2013-11-13 2017-11-29 住友重機械イオンテクノロジー株式会社 Ion generating apparatus and ion generating method
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Also Published As

Publication number Publication date
JP6539414B2 (en) 2019-07-03
US20180226218A1 (en) 2018-08-09
US10796878B2 (en) 2020-10-06
EP3316277A1 (en) 2018-05-02
US10573486B2 (en) 2020-02-25
CN107735850B (en) 2019-11-01
EP3316277A4 (en) 2019-03-20
CN107735850A (en) 2018-02-23
JP2018519649A (en) 2018-07-19
WO2017007138A1 (en) 2017-01-12
US20200083018A1 (en) 2020-03-12

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