SG11201709669TA - Memory cell and non-volatile semiconductor storage device - Google Patents

Memory cell and non-volatile semiconductor storage device

Info

Publication number
SG11201709669TA
SG11201709669TA SG11201709669TA SG11201709669TA SG11201709669TA SG 11201709669T A SG11201709669T A SG 11201709669TA SG 11201709669T A SG11201709669T A SG 11201709669TA SG 11201709669T A SG11201709669T A SG 11201709669TA SG 11201709669T A SG11201709669T A SG 11201709669TA
Authority
SG
Singapore
Prior art keywords
storage device
memory cell
semiconductor storage
volatile semiconductor
volatile
Prior art date
Application number
SG11201709669TA
Inventor
Yasuhiro Taniguchi
Fukuo Owada
Yasuhiko Kawashima
Shinji Yoshida
Kosuke Okuyama
Original Assignee
Floadia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp filed Critical Floadia Corp
Publication of SG11201709669TA publication Critical patent/SG11201709669TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
SG11201709669TA 2015-06-01 2016-05-27 Memory cell and non-volatile semiconductor storage device SG11201709669TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015111190A JP5934416B1 (en) 2015-06-01 2015-06-01 Memory cell and nonvolatile semiconductor memory device
PCT/JP2016/065758 WO2016194827A1 (en) 2015-06-01 2016-05-27 Memory cell and non-volatile semiconductor storage device

Publications (1)

Publication Number Publication Date
SG11201709669TA true SG11201709669TA (en) 2017-12-28

Family

ID=56120514

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201709669TA SG11201709669TA (en) 2015-06-01 2016-05-27 Memory cell and non-volatile semiconductor storage device

Country Status (9)

Country Link
US (1) US10381446B2 (en)
EP (1) EP3300103B1 (en)
JP (1) JP5934416B1 (en)
KR (1) KR20180014692A (en)
CN (1) CN107750397B (en)
IL (1) IL255820A (en)
SG (1) SG11201709669TA (en)
TW (1) TWI595602B (en)
WO (1) WO2016194827A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112712602B (en) * 2020-12-11 2022-09-02 陇东学院 Automatic charging device based on intelligent transportation

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432773B1 (en) * 1999-04-08 2002-08-13 Microchip Technology Incorporated Memory cell having an ONO film with an ONO sidewall and method of fabricating same
JP4058232B2 (en) 2000-11-29 2008-03-05 株式会社ルネサステクノロジ Semiconductor device and IC card
JP4477886B2 (en) * 2003-04-28 2010-06-09 株式会社ルネサステクノロジ Manufacturing method of semiconductor device
JP2004342276A (en) 2003-05-19 2004-12-02 Sharp Corp Semiconductor memory device and its programming method
JP2005142354A (en) * 2003-11-06 2005-06-02 Matsushita Electric Ind Co Ltd Non-volatile semiconductor storage device, its driving method, and manufacturing method
JP4601316B2 (en) 2004-03-31 2010-12-22 ルネサスエレクトロニクス株式会社 Nonvolatile semiconductor memory device
US7547941B2 (en) * 2006-05-04 2009-06-16 Elite Semiconductor Memory Technology, Inc. NAND non-volatile two-bit memory and fabrication method
JP2010278314A (en) * 2009-05-29 2010-12-09 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
JP2011129816A (en) * 2009-12-21 2011-06-30 Renesas Electronics Corp Semiconductor device
KR101979299B1 (en) * 2012-12-26 2019-09-03 에스케이하이닉스 주식회사 Nonvolatile memory device and method of fabricating the same
US9111866B2 (en) * 2013-03-07 2015-08-18 Globalfoundries Singapore Pte. Ltd. Method of forming split-gate cell for non-volative memory devices
JP5911834B2 (en) * 2013-09-11 2016-04-27 株式会社東芝 Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
CN107750397B (en) 2019-02-19
EP3300103A4 (en) 2018-06-27
CN107750397A (en) 2018-03-02
US10381446B2 (en) 2019-08-13
IL255820A (en) 2018-01-31
WO2016194827A1 (en) 2016-12-08
JP2016225487A (en) 2016-12-28
TWI595602B (en) 2017-08-11
KR20180014692A (en) 2018-02-09
EP3300103A1 (en) 2018-03-28
EP3300103B1 (en) 2022-01-12
JP5934416B1 (en) 2016-06-15
US20180197958A1 (en) 2018-07-12
TW201644007A (en) 2016-12-16

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