SG11201706962PA - Atmosphere formation apparatus and floatation conveyance method - Google Patents
Atmosphere formation apparatus and floatation conveyance methodInfo
- Publication number
- SG11201706962PA SG11201706962PA SG11201706962PA SG11201706962PA SG11201706962PA SG 11201706962P A SG11201706962P A SG 11201706962PA SG 11201706962P A SG11201706962P A SG 11201706962PA SG 11201706962P A SG11201706962P A SG 11201706962PA SG 11201706962P A SG11201706962P A SG 11201706962PA
- Authority
- SG
- Singapore
- Prior art keywords
- formation apparatus
- conveyance method
- atmosphere formation
- floatation
- floatation conveyance
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67736—Loading to or unloading from a conveyor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/123—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
- B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
- B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
- B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
- B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
- B65G49/063—Transporting devices for sheet glass
- B65G49/064—Transporting devices for sheet glass in a horizontal position
- B65G49/065—Transporting devices for sheet glass in a horizontal position supported partially or completely on fluid cushions, e.g. a gas cushion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015039313A JP6018659B2 (en) | 2015-02-27 | 2015-02-27 | Atmosphere forming apparatus and levitation conveyance method |
PCT/JP2016/052376 WO2016136366A1 (en) | 2015-02-27 | 2016-01-27 | Atmosphere forming device and floating transport method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201706962PA true SG11201706962PA (en) | 2017-09-28 |
Family
ID=56788356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201706962PA SG11201706962PA (en) | 2015-02-27 | 2016-01-27 | Atmosphere formation apparatus and floatation conveyance method |
Country Status (7)
Country | Link |
---|---|
US (1) | US10446426B2 (en) |
JP (1) | JP6018659B2 (en) |
KR (1) | KR20170121200A (en) |
CN (2) | CN107430998A (en) |
SG (1) | SG11201706962PA (en) |
TW (1) | TW201701329A (en) |
WO (1) | WO2016136366A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6917691B2 (en) * | 2016-10-04 | 2021-08-11 | 株式会社日本製鋼所 | Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device |
JP2018085472A (en) * | 2016-11-25 | 2018-05-31 | 株式会社ブイ・テクノロジー | Laser annealing equipment |
JP6983578B2 (en) * | 2017-08-25 | 2021-12-17 | 株式会社日本製鋼所 | Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device |
WO2019102548A1 (en) * | 2017-11-22 | 2019-05-31 | 堺ディスプレイプロダクト株式会社 | Laser annealing method, laser annealing apparatus, and method for manufacturing active matrix substrate |
JP7034817B2 (en) * | 2018-04-19 | 2022-03-14 | 株式会社日本製鋼所 | Manufacturing method of laser processing equipment and semiconductor equipment |
CN112236843A (en) * | 2018-06-06 | 2021-01-15 | 堺显示器制品株式会社 | Laser annealing method, laser annealing apparatus, and method for manufacturing active matrix substrate |
JP7120833B2 (en) | 2018-07-10 | 2022-08-17 | Jswアクティナシステム株式会社 | Laser processing equipment |
JP7306860B2 (en) * | 2019-04-11 | 2023-07-11 | Jswアクティナシステム株式会社 | Laser processing equipment |
JP7437187B2 (en) * | 2020-02-26 | 2024-02-22 | Jswアクティナシステム株式会社 | Levitation conveyance device and laser processing device |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3502981B2 (en) * | 1995-10-05 | 2004-03-02 | 株式会社日本製鋼所 | Laser annealing equipment |
JP2000072251A (en) | 1998-08-31 | 2000-03-07 | Watanabe Shoko:Kk | Flotation carrier device and flotation carrier system |
US6071796A (en) * | 1998-10-30 | 2000-06-06 | Sharp Laboratories Of America, Inc. | Method of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambient |
JP4974416B2 (en) * | 2001-01-30 | 2012-07-11 | 株式会社半導体エネルギー研究所 | Laser annealing equipment |
JP4610178B2 (en) * | 2002-11-15 | 2011-01-12 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US7232715B2 (en) | 2002-11-15 | 2007-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor film and semiconductor device and laser processing apparatus |
JP4268447B2 (en) * | 2003-05-14 | 2009-05-27 | Hoya株式会社 | Substrate holder, substrate processing apparatus, substrate inspection apparatus, and methods of use thereof |
CN101124133A (en) * | 2004-04-14 | 2008-02-13 | 科福罗科学解决方案有限公司 | Non-contact support platforms for distance adjustment |
JP4869612B2 (en) | 2005-03-25 | 2012-02-08 | 東京エレクトロン株式会社 | Substrate transport system and substrate transport method |
JP2007051001A (en) | 2005-08-19 | 2007-03-01 | Nippon Sekkei Kogyo:Kk | Method and apparatus for conveying thin sheet-like material |
US20070117287A1 (en) * | 2005-11-23 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
JP5037926B2 (en) * | 2006-12-14 | 2012-10-03 | 三菱電機株式会社 | Laser annealing equipment |
JP2009135430A (en) * | 2007-10-10 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
JP5404064B2 (en) * | 2008-01-16 | 2014-01-29 | 株式会社半導体エネルギー研究所 | Laser processing apparatus and semiconductor substrate manufacturing method |
US8383202B2 (en) * | 2008-06-13 | 2013-02-26 | Kateeva, Inc. | Method and apparatus for load-locked printing |
KR101896949B1 (en) * | 2010-04-12 | 2018-09-11 | 가부시끼가이샤 니혼 세이꼬쇼 | Laser processing apparatus |
DE102010049837A1 (en) * | 2010-10-27 | 2012-05-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gas lock and coating device with a gas lock |
EP2481832A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition |
JP5408678B2 (en) | 2011-11-07 | 2014-02-05 | 株式会社日本製鋼所 | Laser processing equipment |
JP6560198B2 (en) * | 2014-05-12 | 2019-08-14 | 株式会社日本製鋼所 | Laser annealing apparatus, continuous conveyance path for laser annealing treatment, and laser annealing treatment method |
JP6215281B2 (en) * | 2015-10-27 | 2017-10-18 | 株式会社日本製鋼所 | SUBSTRATE TRANSFER DEVICE, SEMICONDUCTOR MANUFACTURING DEVICE, AND SUBSTRATE TRANSFER METHOD |
-
2015
- 2015-02-27 JP JP2015039313A patent/JP6018659B2/en active Active
-
2016
- 2016-01-27 WO PCT/JP2016/052376 patent/WO2016136366A1/en active Application Filing
- 2016-01-27 CN CN201680011967.7A patent/CN107430998A/en active Pending
- 2016-01-27 US US15/553,989 patent/US10446426B2/en active Active
- 2016-01-27 SG SG11201706962PA patent/SG11201706962PA/en unknown
- 2016-01-27 CN CN202110189958.XA patent/CN113013073B/en active Active
- 2016-01-27 KR KR1020177024992A patent/KR20170121200A/en unknown
- 2016-02-19 TW TW105104835A patent/TW201701329A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW201701329A (en) | 2017-01-01 |
KR20170121200A (en) | 2017-11-01 |
JP6018659B2 (en) | 2016-11-02 |
CN113013073A (en) | 2021-06-22 |
CN113013073B (en) | 2023-07-25 |
CN107430998A (en) | 2017-12-01 |
WO2016136366A1 (en) | 2016-09-01 |
JP2016162856A (en) | 2016-09-05 |
US10446426B2 (en) | 2019-10-15 |
US20180033664A1 (en) | 2018-02-01 |
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