SG11201706524WA - Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin - Google Patents

Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin

Info

Publication number
SG11201706524WA
SG11201706524WA SG11201706524WA SG11201706524WA SG11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA
Authority
SG
Singapore
Prior art keywords
lithography
resin
underlayer film
compound
forming
Prior art date
Application number
SG11201706524WA
Other languages
English (en)
Inventor
Junya Horiuchi
Masatoshi Echigo
Takashi Makinoshima
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of SG11201706524WA publication Critical patent/SG11201706524WA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/12Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
    • C07C39/15Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/11Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms
    • C07C37/20Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms using aldehydes or ketones
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/68Purification; separation; Use of additives, e.g. for stabilisation
    • C07C37/70Purification; separation; Use of additives, e.g. for stabilisation by physical treatment
    • C07C37/72Purification; separation; Use of additives, e.g. for stabilisation by physical treatment by liquid-liquid treatment
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/02Condensation polymers of aldehydes or ketones with phenols only of ketones
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/20Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/06Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C09D161/12Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols with polyhydric phenols
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11201706524WA 2015-03-06 2016-03-02 Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin SG11201706524WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015045223 2015-03-06
PCT/JP2016/056449 WO2016143635A1 (ja) 2015-03-06 2016-03-02 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜、パターン形成方法及び化合物又は樹脂の精製方法

Publications (1)

Publication Number Publication Date
SG11201706524WA true SG11201706524WA (en) 2017-09-28

Family

ID=56879466

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201706524WA SG11201706524WA (en) 2015-03-06 2016-03-02 Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin

Country Status (9)

Country Link
US (1) US20180044270A1 (ja)
EP (1) EP3266759B1 (ja)
JP (1) JP6781959B2 (ja)
KR (1) KR102552910B1 (ja)
CN (1) CN107531597A (ja)
IL (1) IL254323A0 (ja)
SG (1) SG11201706524WA (ja)
TW (1) TWI762440B (ja)
WO (1) WO2016143635A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3118684B1 (en) 2014-03-13 2019-07-24 Mitsubishi Gas Chemical Company, Inc. Resist composition and method for forming resist pattern
US10294183B2 (en) 2014-03-13 2019-05-21 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin
US10747112B2 (en) 2015-03-30 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method
KR102527656B1 (ko) 2015-03-30 2023-05-02 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 레지스트 기재, 레지스트 조성물 및 레지스트 패턴 형성방법
KR102004129B1 (ko) * 2016-11-11 2019-07-25 스미또모 베이크라이트 가부시키가이샤 감광성 수지 조성물, 수지막, 경화막, 반도체 장치의 제조 방법, 및 반도체 장치
US20200002307A1 (en) * 2017-02-28 2020-01-02 Mitsubishi Gas Chemical Company, Inc. Method for purifying compound or resin and method for producing composition
WO2019013293A1 (ja) * 2017-07-14 2019-01-17 日産化学株式会社 レジスト下層膜形成組成物、レジスト下層膜、レジストパターンの形成方法及び半導体装置の製造方法
WO2020026879A1 (ja) * 2018-07-31 2020-02-06 三菱瓦斯化学株式会社 下層膜形成組成物
KR102260811B1 (ko) 2018-12-26 2021-06-03 삼성에스디아이 주식회사 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법

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JP3052449B2 (ja) * 1991-07-17 2000-06-12 住友化学工業株式会社 レジストの金属低減化方法
US6660811B2 (en) * 2001-01-30 2003-12-09 Dainippon Ink And Chemicals, Inc. Epoxy resin composition and curing product thereof
JP3774668B2 (ja) 2001-02-07 2006-05-17 東京エレクトロン株式会社 シリコン窒化膜形成装置の洗浄前処理方法
JP3914493B2 (ja) 2002-11-27 2007-05-16 東京応化工業株式会社 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法
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JP3981030B2 (ja) 2003-03-07 2007-09-26 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP4388429B2 (ja) 2004-02-04 2009-12-24 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP4781280B2 (ja) 2006-01-25 2011-09-28 信越化学工業株式会社 反射防止膜材料、基板、及びパターン形成方法
JP4638380B2 (ja) 2006-01-27 2011-02-23 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2009114144A (ja) * 2007-11-08 2009-05-28 Japan Science & Technology Agency ジクロロジシアノベンゾキノンを用いたフェノールオリゴマーの製造方法
WO2009072465A1 (ja) 2007-12-07 2009-06-11 Mitsubishi Gas Chemical Company, Inc. リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法
KR101741285B1 (ko) * 2009-09-15 2017-06-15 미츠비시 가스 가가쿠 가부시키가이샤 방향족 탄화수소 수지 및 리소그래피용 하층막 형성 조성물
KR101912677B1 (ko) * 2012-08-10 2018-10-29 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성조성물
CN105143979B (zh) * 2013-04-17 2019-07-05 日产化学工业株式会社 抗蚀剂下层膜形成用组合物
JP6119983B2 (ja) * 2013-06-28 2017-04-26 日産化学工業株式会社 リソグラフィー用レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法
US10294183B2 (en) * 2014-03-13 2019-05-21 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin
EP3118684B1 (en) * 2014-03-13 2019-07-24 Mitsubishi Gas Chemical Company, Inc. Resist composition and method for forming resist pattern
CN107250089A (zh) * 2015-02-12 2017-10-13 三菱瓦斯化学株式会社 化合物、树脂、光刻用下层膜形成材料、光刻用下层膜形成用组合物、光刻用下层膜、抗蚀图案形成方法、电路图案形成方法和化合物或树脂的纯化方法

Also Published As

Publication number Publication date
KR20170127489A (ko) 2017-11-21
EP3266759B1 (en) 2023-09-13
TWI762440B (zh) 2022-05-01
JP6781959B2 (ja) 2020-11-11
EP3266759A1 (en) 2018-01-10
CN107531597A (zh) 2018-01-02
WO2016143635A1 (ja) 2016-09-15
TW201638061A (zh) 2016-11-01
KR102552910B1 (ko) 2023-07-10
US20180044270A1 (en) 2018-02-15
IL254323A0 (en) 2017-11-30
JPWO2016143635A1 (ja) 2017-12-14
EP3266759A4 (en) 2018-10-17

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