SG11201706524WA - Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin - Google Patents
Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resinInfo
- Publication number
- SG11201706524WA SG11201706524WA SG11201706524WA SG11201706524WA SG11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA
- Authority
- SG
- Singapore
- Prior art keywords
- lithography
- resin
- underlayer film
- compound
- forming
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title 2
- 238000001459 lithography Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 2
- 239000011347 resin Substances 0.000 title 2
- 229920005989 resin Polymers 0.000 title 2
- 239000000463 material Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
- C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
- C07C39/15—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C37/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
- C07C37/11—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms
- C07C37/20—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms using aldehydes or ketones
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C37/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
- C07C37/68—Purification; separation; Use of additives, e.g. for stabilisation
- C07C37/70—Purification; separation; Use of additives, e.g. for stabilisation by physical treatment
- C07C37/72—Purification; separation; Use of additives, e.g. for stabilisation by physical treatment by liquid-liquid treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/02—Condensation polymers of aldehydes or ketones with phenols only of ketones
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
- C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
- C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
- C09D161/12—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols with polyhydric phenols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials For Photolithography (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015045223 | 2015-03-06 | ||
PCT/JP2016/056449 WO2016143635A1 (fr) | 2015-03-06 | 2016-03-02 | Composé, résine, matériau pour former un film de sous-couche pour lithographie, film de sous-couche pour lithographie, procédé de formation de motif et procédé de purification d'un composé ou d'une résine |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201706524WA true SG11201706524WA (en) | 2017-09-28 |
Family
ID=56879466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201706524WA SG11201706524WA (en) | 2015-03-06 | 2016-03-02 | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin |
Country Status (9)
Country | Link |
---|---|
US (1) | US20180044270A1 (fr) |
EP (1) | EP3266759B1 (fr) |
JP (1) | JP6781959B2 (fr) |
KR (1) | KR102552910B1 (fr) |
CN (1) | CN107531597A (fr) |
IL (1) | IL254323A0 (fr) |
SG (1) | SG11201706524WA (fr) |
TW (1) | TWI762440B (fr) |
WO (1) | WO2016143635A1 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3118183B1 (fr) | 2014-03-13 | 2021-07-21 | Mitsubishi Gas Chemical Company, Inc. | Composé, résine, matériau de formation de film de couche de base pour lithographie, film de couche de base pour lithographie, procédé de formation de motif, et procédé pour raffiner le composé ou la résine |
US10303055B2 (en) | 2014-03-13 | 2019-05-28 | Mitsubishi Gas Chemical Company, Inc. | Resist composition and method for forming resist pattern |
EP3279179B1 (fr) | 2015-03-30 | 2019-12-18 | Mitsubishi Gas Chemical Company, Inc. | Composé, résine, et procédé pour les purifier, matériau de formation de film de sous-couche pour la lithographie, composition de formation de film de sous-couche, et film de sous-couche, et procédé de formation d'un motif de réserve et procédé de formation d'un motif de circuit |
EP3279728B1 (fr) | 2015-03-30 | 2021-03-17 | Mitsubishi Gas Chemical Company, Inc. | Matière de base de réserve, composition de réserve et procédé de formation de motifs de réserve |
CN115718406A (zh) * | 2016-11-11 | 2023-02-28 | 住友电木株式会社 | 抗蚀剂形成用感光性树脂组合物、树脂膜、固化膜和半导体装置 |
US20200002307A1 (en) * | 2017-02-28 | 2020-01-02 | Mitsubishi Gas Chemical Company, Inc. | Method for purifying compound or resin and method for producing composition |
WO2019013293A1 (fr) * | 2017-07-14 | 2019-01-17 | 日産化学株式会社 | Composition de formation de pellicule de sous-couche de résine photosensible, pellicule de sous-couche de résine photosensible, procédé de formation de motif de résine photosensible et procédé de production de dispositif semiconducteur |
EP3832390A4 (fr) * | 2018-07-31 | 2021-09-22 | Mitsubishi Gas Chemical Company, Inc. | Composition filmogène de sous-couche |
KR102260811B1 (ko) | 2018-12-26 | 2021-06-03 | 삼성에스디아이 주식회사 | 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법 |
JP2020176109A (ja) * | 2019-04-22 | 2020-10-29 | 三菱ケミカル株式会社 | ビスフェノール化合物の製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3052449B2 (ja) * | 1991-07-17 | 2000-06-12 | 住友化学工業株式会社 | レジストの金属低減化方法 |
US6660811B2 (en) * | 2001-01-30 | 2003-12-09 | Dainippon Ink And Chemicals, Inc. | Epoxy resin composition and curing product thereof |
JP3774668B2 (ja) | 2001-02-07 | 2006-05-17 | 東京エレクトロン株式会社 | シリコン窒化膜形成装置の洗浄前処理方法 |
JP3914493B2 (ja) | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
KR100771800B1 (ko) | 2003-01-24 | 2007-10-30 | 도쿄 엘렉트론 가부시키가이샤 | 피처리 기판 상에 실리콘 질화막을 형성하는 cvd 방법 |
JP3981030B2 (ja) | 2003-03-07 | 2007-09-26 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
JP4388429B2 (ja) | 2004-02-04 | 2009-12-24 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
JP4781280B2 (ja) | 2006-01-25 | 2011-09-28 | 信越化学工業株式会社 | 反射防止膜材料、基板、及びパターン形成方法 |
JP4638380B2 (ja) | 2006-01-27 | 2011-02-23 | 信越化学工業株式会社 | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
JP2009114144A (ja) * | 2007-11-08 | 2009-05-28 | Japan Science & Technology Agency | ジクロロジシアノベンゾキノンを用いたフェノールオリゴマーの製造方法 |
CN101889247B (zh) | 2007-12-07 | 2013-04-03 | 三菱瓦斯化学株式会社 | 用于形成光刻用下层膜的组合物和多层抗蚀图案的形成方法 |
KR101741285B1 (ko) * | 2009-09-15 | 2017-06-15 | 미츠비시 가스 가가쿠 가부시키가이샤 | 방향족 탄화수소 수지 및 리소그래피용 하층막 형성 조성물 |
CN104508558B (zh) * | 2012-08-10 | 2016-07-06 | 日产化学工业株式会社 | 抗蚀剂下层膜形成用组合物 |
WO2014171326A1 (fr) * | 2013-04-17 | 2014-10-23 | 日産化学工業株式会社 | Composition permettant de former un film de sous-couche de résine |
JP6119983B2 (ja) * | 2013-06-28 | 2017-04-26 | 日産化学工業株式会社 | リソグラフィー用レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法 |
EP3118183B1 (fr) * | 2014-03-13 | 2021-07-21 | Mitsubishi Gas Chemical Company, Inc. | Composé, résine, matériau de formation de film de couche de base pour lithographie, film de couche de base pour lithographie, procédé de formation de motif, et procédé pour raffiner le composé ou la résine |
US10303055B2 (en) * | 2014-03-13 | 2019-05-28 | Mitsubishi Gas Chemical Company, Inc. | Resist composition and method for forming resist pattern |
US20180029968A1 (en) * | 2015-02-12 | 2018-02-01 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method of compound or resin |
-
2016
- 2016-03-02 US US15/556,121 patent/US20180044270A1/en not_active Abandoned
- 2016-03-02 SG SG11201706524WA patent/SG11201706524WA/en unknown
- 2016-03-02 EP EP16761605.1A patent/EP3266759B1/fr active Active
- 2016-03-02 JP JP2017505009A patent/JP6781959B2/ja active Active
- 2016-03-02 CN CN201680025648.1A patent/CN107531597A/zh active Pending
- 2016-03-02 WO PCT/JP2016/056449 patent/WO2016143635A1/fr active Application Filing
- 2016-03-02 KR KR1020177027588A patent/KR102552910B1/ko active IP Right Grant
- 2016-03-04 TW TW105106741A patent/TWI762440B/zh active
-
2017
- 2017-09-04 IL IL254323A patent/IL254323A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP3266759A4 (fr) | 2018-10-17 |
KR20170127489A (ko) | 2017-11-21 |
TW201638061A (zh) | 2016-11-01 |
JP6781959B2 (ja) | 2020-11-11 |
US20180044270A1 (en) | 2018-02-15 |
EP3266759B1 (fr) | 2023-09-13 |
JPWO2016143635A1 (ja) | 2017-12-14 |
IL254323A0 (en) | 2017-11-30 |
KR102552910B1 (ko) | 2023-07-10 |
EP3266759A1 (fr) | 2018-01-10 |
WO2016143635A1 (fr) | 2016-09-15 |
CN107531597A (zh) | 2018-01-02 |
TWI762440B (zh) | 2022-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL253109A0 (en) | Compound, resin, material for the production of underlayer film for lithography, underlayer film for lithography, method of creating a pattern and method of cleaning | |
SG11201607444VA (en) | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin | |
IL254447A0 (en) | Compound, resin, material for making a sublayer film for lithography, a preparation for creating a sublayer film for lithography, a sublayer film for lithography, a method for creating a pattern and a method for cleaning the compound or resin | |
IL254323A0 (en) | Compound, resin, material for preparing sublayer film for lithography, sublayer film for lithography, method for creating a pattern and method for cleaning compound or resin | |
IL253822A0 (en) | Compound, resin, material for the production of an underlayer of film for lithography, preparation for the production of an underlayer of film for lithography, an underlayer for lithography, a protective material for the production method and a cleaning agent for the compound or resin | |
EP3627224A4 (fr) | Matériau filmogène pour lithographie, composition pour la formation d'un film en lithographie, film de sous-couche pour lithographie et procédé de formation de motif | |
EP3327005A4 (fr) | Composé, résine, matériau de formation de film formant sous-couche pour lithographie, composition pour former un film formant sous-couche pour lithographie, film formant sous-couche pour lithographie, procédé de formation de motif de résine photosensible, procédé de formation de motif de circuit, et procédé de purification | |
SG11201609095VA (en) | Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method | |
PL3339360T3 (pl) | Sposób oczyszczania odzyskiwanego polietylenu | |
EP3348542A4 (fr) | Composé, résine, composition de résine photosensible ou composition sensible au rayonnement, procédé pour former un motif de résine photosensible, procédé pour produire un film amorphe, matériau pour former un film de sous-couche lithographique, composition pour former un film de sous-couche lithographique, procédé pour former un motif de circuit et procédé de purification | |
EP2955175A4 (fr) | Composé, matériau de formation de film de sous-couche pour lithographie, film de sous-couche pour lithographie et procédé de formation de motif | |
EP3279179A4 (fr) | Composé, résine, et procédé pour les purifier, matériau de formation de film de sous-couche pour la lithographie, composition de formation de film de sous-couche, et film de sous-couche, et procédé de formation d'un motif de réserve et procédé de formation d'un motif de circuit | |
EP3098834A4 (fr) | Dispositif d'exposition, procédé de formation d'un motif résistant, et support d'informations | |
SG11201607443XA (en) | Resist composition and method for forming resist pattern | |
EP3346335A4 (fr) | Matériau destiné à former des films de sous-couche pour lithographie, composition destinée à former des films de sous-couche pour lithographie, film de sous-couche pour lithographie et procédé de fabrication associé, procédé de formation de motif, résine, et procédé de purification | |
EP3395845A4 (fr) | Composé, résine, composition, procédé de formation de motif de photorésine et procédé de formation de motif de circuit | |
EP3346334A4 (fr) | Matériau permettant de former des films de sous-couche pour lithographie, composition pour former des films de sous-couche pour lithographie, film de sous-couche pour lithographie et son procédé de production, et procédé de formation de motif de réserve | |
SG11201707780TA (en) | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method | |
SG11201706306SA (en) | Compound, resist composition, and method for forming resist pattern using it | |
EP3168863A4 (fr) | Moule pour estampage image par image et son procédé de fabrication | |
EP3229075A4 (fr) | Composition de résine photosensible, procédé de fabrication de cette dernière et procédé de formation d'un motif de réserve | |
EP2955577A4 (fr) | Composé, substance formatrice de sous-couche pour lithographie, sous-couche pour lithographie ainsi que procédé de formation de motif | |
EP3343290A4 (fr) | Matériau pour lithographie ainsi que procédé de fabrication de celui-ci, composition pour lithographie, procédé de formation de motif, composé, résine, et procédé de purification de ces composé et résine | |
EP3451059A4 (fr) | Composition de formation de film de sous-couche de réserve, film de sous-couche pour lithographie et procédé de formation de motifs | |
EP3279728A4 (fr) | Matière de base pour photorésine, composition de photorésine et procédé de formation d'un motif de photorésine |